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Analysis of Municipal Water Supply and Drainage Pipe Design Technology
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作者 Liang Liu 《Journal of Architectural Research and Development》 2024年第3期69-74,共6页
The quality and safety of residents’water rely heavily on the design of municipal water supply and drainage pipes.Therefore,this paper aims to enhance the optimization of municipal water supply and drainage pipe desi... The quality and safety of residents’water rely heavily on the design of municipal water supply and drainage pipes.Therefore,this paper aims to enhance the optimization of municipal water supply and drainage pipe design by focusing on design requirements,principles,and key elements.Drawing from relevant design optimization experiences,technology advancements,and optimization measures,the research will analyze and consolidate the essential aspects of municipal water supply and drainage pipe design.The goal is to fundamentally elevate the quality standards of these designs,ensuring they meet the criteria for engineering project excellence.Through this comprehensive approach,we aim to contribute to the improvement and sustainability of water supply and drainage systems,safeguarding the well-being of residents. 展开更多
关键词 Municipal water supply and drainage Pipe layout RAINWATER SEWAGE design technology
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Application of Multimedia and Internet Technology in Learning Mould Design
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作者 Simon S P Shum 《厦门大学学报(自然科学版)》 CAS CSCD 北大核心 2002年第S1期295-296,共2页
With the use of multimedia which combines the use o f text, sound, images, motion video and animation, it is more efficient for studen ts to learn mould design interactively. A program is created using several multi m... With the use of multimedia which combines the use o f text, sound, images, motion video and animation, it is more efficient for studen ts to learn mould design interactively. A program is created using several multi media software to simulate the mechanism of moulding processes in order to let s tudents understand the concept of mould design. In addition, students can even access the program through the Internet. Therefore, the software is defined as Multimedia and Internet Technology (MIT) program. The MIT program consists of four sections: (i) simulation of mould mechanisms, ( ii) cooling system, (iii) material information and (iv) games for tutorials. Sec tion One covers the basic operations of different types of moulds such as two-p late mould, three-plate mould, split mould, side-core mould and mould with und ercuts. Section Two introduces different types of cooling systems such as bubble r, baffle, cooling circuits, etc. Section Three provides some useful material in formation for mould design. Section Four contains games of matching mould compon ents, mould design problem finding and multiple choice questions to test student s how much they understand mould design concept. Multimedia is highly effective particularly in teaching and learning. It changes the nature of learning itself. It makes reading dynamic by giving words an impo rtant new dimension. It allows students to see, hear and do simultaneously, thus significantly reducing average learning time. Furthermore, through cooperative learning on Internet, students can access the program, share data or search info rmation anytime anywhere. Therefore, Multimedia and Internet Technology is one o f the vital aspects to speed up the realization of information age in society. 展开更多
关键词 Application of Multimedia and Internet technology in Learning Mould design
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Design Technology for Bracing of Deep Foundation Pit
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《Electricity》 1997年第4期49-52,共4页
关键词 design technology for Bracing of Deep Foundation Pit PIT
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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect
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作者 冯亚辉 郭红霞 +7 位作者 刘益维 欧阳晓平 张晋新 马武英 张凤祁 白如雪 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期554-562,共9页
The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive positi... The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents. 展开更多
关键词 silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)
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Future Digital Design and Manufacturing Technologies for Manufacturing Innovation:Embracing Industry 4.0 and Beyond 被引量:1
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作者 Sheng-Feng Qin Kai Cheng 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2016年第2期I0001-I0001,共1页
Industry 4.0 as referred to a fourth industrial revolution has endorsed in several national manufacturing development plans such as in Germany, the UK, and China. A set of important pervasive and secondary technologie... Industry 4.0 as referred to a fourth industrial revolution has endorsed in several national manufacturing development plans such as in Germany, the UK, and China. A set of important pervasive and secondary technologies for future manufacturing activities have been identified such as additive manufacturing, sensor technology, big data analytics, Internet of things, robotics, cloud computing, and nanotechnology. 展开更多
关键词 Future Digital design and Manufacturing Technologies for Manufacturing Innovation
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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source 被引量:1
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作者 薛院院 王祖军 +9 位作者 陈伟 郭晓强 姚志斌 何宝平 聂栩 赖善坤 黄港 盛江坤 马武英 缑石龙 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第7期435-442,共8页
Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradi... Displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal. 展开更多
关键词 displacement damage effects charge-coupled device(CCD) China Spallation Neutron Source(CSNS) MECHANISMS technology computer-aided design(TCAD)
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Assessing the influence of jet-grouting underpinning on the nearby buildings 被引量:1
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作者 Aleksandra Chepurnova 《Journal of Rock Mechanics and Geotechnical Engineering》 SCIE CSCD 2014年第2期105-112,共8页
This paper focuses on the underpinning-induced ground movement due to jet-grouting. Jet-grouting technique can cause distortions as a result of an inaccurate processing sequence and/or errors made at different stages ... This paper focuses on the underpinning-induced ground movement due to jet-grouting. Jet-grouting technique can cause distortions as a result of an inaccurate processing sequence and/or errors made at different stages of work execution. The aim of this paper is to determine the minimum value of such movement on the basis of the findings obtained at two similar construction sites located in the Historical Center of Moscow, considering that the maximum value is usually unpredictable. Numerical simulation of the process of soil eroding agrees well with the observational data at the current stage. It was found that the minimum value of deformations (only settlement was considered in this study) due to jetgrouting is no less than 2-3 mm. By contrast, the negative scenario of deformation due to foundation underpinning is clearly demonstrated. Also, this paper provides some general solutions for excavation supporting system as well as for underpinning design. 展开更多
关键词 Geotechnical analyses Jet-grouting Monitoring Soilcrete element Technological settlement Underpinning design
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Simulation analysis of combined UV/blue photodetector in CMOS process by technology computer-aided design
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作者 Changping CHEN Xiangliang JIN +2 位作者 Lizhen TANG Hongjiao YANG Jun LUO 《Frontiers of Optoelectronics》 EI CSCD 2014年第1期69-73,共5页
A composite ultraviolet (UV)/blue photode- tector structure has been proposed, which is composed of P-type silicon substrate, Pwelb Nwell and N-channel metal- oxide-semiconductor field-effect transistor (NMOSFET) ... A composite ultraviolet (UV)/blue photode- tector structure has been proposed, which is composed of P-type silicon substrate, Pwelb Nwell and N-channel metal- oxide-semiconductor field-effect transistor (NMOSFET) realized in the PweH. In this photodetector, lateral ring- shaped Pwell-Nwell junction was used to separate the photogenerated carriers, and non-equilibrium excess hole was injected to the Pwell bulk for changing the bulk potential and shifting the NMOSFET's threshold voltage as well as the output drain current. By technology computer-aided design (TCAD) device, simulation and analysis of this proposed photodetector were carried out. Simulation results show that the combined photodetector has enhanced responsivity to UV/blue spectrum. More- over, it exhibits very high sensitivity to weak and especially ultral-weak optical light. A sensitivity of 7000 A/W was obtained when an incident optical power of 0.01 μW was illuminated to the photodetector, which is 35000 times higher than the responsivity of a conventional silicon-based UV photodiode (usually is about 0.2 A/W). As a result, this proposed combined photodetector has great potential values for UV applications. 展开更多
关键词 ultraviolet (UV)golue photodetector weaklight detection complimentary metal-oxide-semiconductor(CMOS) technology computer-aided design (TCAD)
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Modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes
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作者 房涛 李灵琪 +1 位作者 夏光睿 于洪宇 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第2期457-461,共5页
With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material para... With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer. 展开更多
关键词 technology computer-aided design(TCAD) gallium oxide(Ga2O3) gallium nitride(GaN) Schottky barrier diode(SBD)
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Evaluation of Contact Pressure in Bending under Tension Test by a Pressure Sensitive Film
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作者 Luis Fernando Folle Lirio Schaeffer 《Journal of Surface Engineered Materials and Advanced Technology》 2016年第4期201-214,共15页
The contact pressure acting on the sheet/tools interface has been studied because of growing the concern about the wear of tools. Recent studies make use of numerical simulation software to evaluate and correlate this... The contact pressure acting on the sheet/tools interface has been studied because of growing the concern about the wear of tools. Recent studies make use of numerical simulation software to evaluate and correlate this pressure with the friction and wear generated. Since there are many studies that determine the coefficient of friction in sheet metal forming by bending under tension (BUT) test, the contact pressure between the pin and the sheet was measured using a film that has the ability to record the applied pressure. The vertical force applied to pin was also measured. The results indicate that the vertical force is more accurate to set the contact pressure that using equations predetermined. It was also observed that the contact area between the sheet and the pin is always smaller than the area calculated geometrically. The friction coefficient was determined for the BUT test through several equations proposed by various authors in order to check if there is much variation between the results. It was observed that the friction coefficient showed little variation for each equation, and each one can be used. The material used was the commercially pure aluminum, alloy Al1100. 展开更多
关键词 Coefficient of Friction Sheet Metal Forming Process Bending under Tension Test Contact Pressure technology Applied to design
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BIM技术在桥梁设计阶段的应用探讨
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作者 王亚文 《建筑与装饰》 2022年第2期139-141,共3页
在现阶段我国桥梁工程项目建设中,因为面临着更高的建设要求,桥梁结构也更为复杂,在承载能力以及耐久性方面同样也需要得到良好保障,如此一来,需要重点围绕桥梁工程项目建设全过程进行严格把关。从桥梁工程项目设计阶段来看,如果设计方... 在现阶段我国桥梁工程项目建设中,因为面临着更高的建设要求,桥梁结构也更为复杂,在承载能力以及耐久性方面同样也需要得到良好保障,如此一来,需要重点围绕桥梁工程项目建设全过程进行严格把关。从桥梁工程项目设计阶段来看,如果设计方案不合理,存在着较多的隐患和缺陷,必然也就会影响后续桥梁工程项目整体施工效果,所以,切实提升桥梁工程设计水平极为必要。BIM技术作为当前工程行业中至关重要的新型技术手段,确实在多个方面发挥着积极作用,将其应用到桥梁工程项目中,必然也可以更好地优化设计方案。 展开更多
关键词 BIM技术 桥梁设计 应用Discussion on Application of BIM technology at Bridge design Phase
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Improving the Efficiency of Mechatronic Systems in Order to Ensure Intensive Reform“Industry-4.0”
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作者 Raul Turmanidze Giorgi Popkhadze 《Journal of Physical Science and Application》 2020年第2期30-42,共13页
The presented work will show the highest relevance of solving all the issues related to this problem and present the results of the analysis of the main expected potential problems,which may occur in the implementatio... The presented work will show the highest relevance of solving all the issues related to this problem and present the results of the analysis of the main expected potential problems,which may occur in the implementation of the INDUSTRY-4.0 reform.It is proved that the pace and level of development of this reform will be determined to a large extent by the effectiveness of the individual nodes used and the entire mechatronic system.It has also been established that as a result of systematic miniaturization of the nodes of radio-electronic equipment and microelectronic equipment and microelectronic technology,the main problem of these reforms and the implementation of complex technological processes is instrumental and technological support,especially with cutting micro-tools and equipment.Therefore,on the example of these investigations,methods for improving their performance are shown. 展开更多
关键词 “Industry-4.0” mechatronic systems micro tools for electro technical industry optimization of the design and geometrical parameters of various tools and technological equipment.
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General optimal design of solar-powered unmanned aerial vehicle for priority considering propulsion system 被引量:4
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作者 Xinhua LI Kaijun SUN Feng LI 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2020年第8期2176-2188,共13页
This paper describes the general optimization design method of Solar-Powered Unmanned Aerial Vehicle which priority considering propulsion system planning. Based on the traditional solar powered aircraft design method... This paper describes the general optimization design method of Solar-Powered Unmanned Aerial Vehicle which priority considering propulsion system planning. Based on the traditional solar powered aircraft design method, the propulsion system top-level target parameters which affect the path planning are integrated into the general optimization design. According to the typical mission requirements of Solar-Powered Unmanned Aerial Vehicle, considering the design variables such as wing area, aspect ratio, design mission date and so on, the general optimization is carried out with the minimum aircraft weight as the optimization objective. The influence of wing area and aspect ratio on the optimal design results is analyzed and compared with the traditional design method. The results show that the general design method of Solar-Powered Unmanned Aerial Vehicle for priority considering propulsion system can greatly reduce the electricity demand of energy storage battery, greatly reduce the aircraft weight of Solar-Powered Unmanned Aerial Vehicle. 展开更多
关键词 Aircraft design optimization General design technology Route analysis Solar-powered Unmanned aerial vehicle
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Design and construction of super-long span bridges in China: Review and future perspectives 被引量:2
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作者 Wei HUANG Minshan PET +1 位作者 Xiaodong LIU Ya WEI 《Frontiers of Structural and Civil Engineering》 SCIE EI CSCD 2020年第4期803-838,共36页
Super-long span bridges demand high design requirements and involve many difficulties when constructed,which is an important indicator to reflect the bridge technical level of a country.Over the past three decades,a l... Super-long span bridges demand high design requirements and involve many difficulties when constructed,which is an important indicator to reflect the bridge technical level of a country.Over the past three decades,a large percentage of the new long-span bridges around the world were built in China,and thus,abundant technological innovations and experience have been accumulated during the design and construction.This paper aims to review and summarize the design and construction practices of the superstructure,the substructure,and the steel deck paving of the long-span bridges during the past decades as well as the current operation status of the existing long-span bridges in China.A future perspective was given on the developing trend of high-speed railway bridge,bridge over deep-sea,health monitoring and maintenance,intellectualization,standard system,and information technology,which is expected to guide the development direction for the construction of future super long-span bridges and promote China to become a strong bridge construction country. 展开更多
关键词 long-span bridges steel box girder design technology construction technology review and future perspectives
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Development and application of high-end aerospace MEMS 被引量:3
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作者 Weizheng YUAN 《Frontiers of Mechanical Engineering》 SCIE CSCD 2017年第4期567-573,共7页
This paper introduces the design and manu- facturing technology of aerospace microelectromechanical systems (MEMS) characterized by high performance, multi-variety, and small batch. Moreover, several kinds of specia... This paper introduces the design and manu- facturing technology of aerospace microelectromechanical systems (MEMS) characterized by high performance, multi-variety, and small batch. Moreover, several kinds of special MEMS devices with high precision, high reliability, and environmental adaptability, as well as their typical applications in the fields of aeronautics and aerospace, are presented. 展开更多
关键词 MEMS design and manufacture technology aeronautic and aerospace
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What is going on in magnesium alloys? 被引量:37
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作者 X.J. Wang D.K. Xu +10 位作者 R.Z. Wu X.B. Chen Q.M. Peng L. Jin Y.C. Xin Z.Q. Zhang Y. Liu X.H. Chen G. Chen K.K. Deng H.Y. Wang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2018年第2期245-247,共3页
China has been developed into one of the most active regions in terms of both fundamental and applied research on magnesium (Mg) and its alloys in the world from a solid base laid by its prominent metallurgist and m... China has been developed into one of the most active regions in terms of both fundamental and applied research on magnesium (Mg) and its alloys in the world from a solid base laid by its prominent metallurgist and materials scientists over the past decades. Nowadays, a large number of young-generation researchers have been inspired by their predecessors and become the key participants in the fields of Mg alloys, which consequently led to the establishment of China Youth Scholar Society for Magnesium Alloys Research in 2015. Since then, the first two China Youth Scholars Symposiums on Mg Alloys Research had been held at Harbin (2015) and Chongqing (2016) China, respectively. A number of crucial research inter- ests related to fundamental and applied Mg research were discussed at the conferences and summarized in this short perspective, aiming to boost far-reaching initiatives for development of new Mg-based materials to satisfy the requirements for a broad range of industrial employments. Herein, four main aspects are included as follows: i) Plastic deformation mechanism and strengthening strategy, ii) Design and development of new Mg-based materials, iii) Key service properties, and iv) New processing technologies. 展开更多
关键词 Mg alloys Plastic deformation Strengthening Alloying design High performance Corrosion Fatigue behavior Creep Processing technologies Purification
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