The characteristics of low pressure plasma produced by a gas discharges lie in thatthe energy of the electrons are much higher than that of the heavy particles in the system. Inthis paperl the low-pressure plasma trea...The characteristics of low pressure plasma produced by a gas discharges lie in thatthe energy of the electrons are much higher than that of the heavy particles in the system. Inthis paperl the low-pressure plasma treatment technology for the environmental contaminantswas synthetically studied, and the reaction processing and mechanism between the low-pressureplasma and the environmental contaminants were theoretically analyzed. At last, the prospectsand existing problems on the application of low-pressure plasma in the field of environmentalprotection were discussed.展开更多
Through the comparison of calcination conditions between cement preclinkering technology and cement precalcining technology,we studied the characteristics of temperature field distribution of cement preclinkering tech...Through the comparison of calcination conditions between cement preclinkering technology and cement precalcining technology,we studied the characteristics of temperature field distribution of cement preclinkering technology systems including cyclone preheater,preclinkering furnace,and rotary kiln.We used numericalsimulation method to obtain data of temperature field distribution.Some results are found by system study.The ratio of tailcoalof cement preclinkering technology is about 70%,and raw mealtemperature can reach 1070 ℃.Shorter L/D kiln type of preclinkering technology can obtain more stable calcining zone temperature.The highest solid temperature of cement preclinkering technology is higher than 80 ℃,and high temperature region(〉1450 ℃)length is 2 times,which is beneficialfor calcining clinker and higher clinker quality.So cement preclinkering technology can obtain more performance temperature filed,which improves both the solid-phase reaction and liquid-phase reaction.展开更多
A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed, adopting field implant (FI) and multiple field plate (MFP) technologies. The breakdown mechanisms of back gate (BG) turn-on, surface channe...A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed, adopting field implant (FI) and multiple field plate (MFP) technologies. The breakdown mechanisms of back gate (BG) turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μm thick thin-layer SOI.展开更多
The compact ortho-mode transducer (OMT) and compact conical corrugated horn(CCCH) are used as feeding system of the deployable dual polarizing antenna in this paper.A new stricture of double-septum in main wave guide ...The compact ortho-mode transducer (OMT) and compact conical corrugated horn(CCCH) are used as feeding system of the deployable dual polarizing antenna in this paper.A new stricture of double-septum in main wave guide OMT is proposed. The finite difference method in time domain (FDTD) in combination with genetic algorithms(GAs) is used to analysis and optimize this new OMT. The experiment results show that the voltage standing wave ratio (VSWR) of this OMT and feeding system is less than 1.17 in bandwidth; the isolation between the ortho-mode ports is less than -40dB; the cross-polar level of the feed can reach -35dB and the length of the main waveguide can be reduced 50% at least.展开更多
文摘The characteristics of low pressure plasma produced by a gas discharges lie in thatthe energy of the electrons are much higher than that of the heavy particles in the system. Inthis paperl the low-pressure plasma treatment technology for the environmental contaminantswas synthetically studied, and the reaction processing and mechanism between the low-pressureplasma and the environmental contaminants were theoretically analyzed. At last, the prospectsand existing problems on the application of low-pressure plasma in the field of environmentalprotection were discussed.
基金Funded by the Major State Basic Research Perelopment Program of China(973 Program)(No.2009CB623102)the Key Fund Project of Sichuan Provincial Department of Education(No.14ZA0086)the Key Fund Project of Professional Scientific Research Innovation Team of Southwest University of Science and Technology(No.14tdfk01)
文摘Through the comparison of calcination conditions between cement preclinkering technology and cement precalcining technology,we studied the characteristics of temperature field distribution of cement preclinkering technology systems including cyclone preheater,preclinkering furnace,and rotary kiln.We used numericalsimulation method to obtain data of temperature field distribution.Some results are found by system study.The ratio of tailcoalof cement preclinkering technology is about 70%,and raw mealtemperature can reach 1070 ℃.Shorter L/D kiln type of preclinkering technology can obtain more stable calcining zone temperature.The highest solid temperature of cement preclinkering technology is higher than 80 ℃,and high temperature region(〉1450 ℃)length is 2 times,which is beneficialfor calcining clinker and higher clinker quality.So cement preclinkering technology can obtain more performance temperature filed,which improves both the solid-phase reaction and liquid-phase reaction.
基金Project supported by National Natural Science Foundation of China(Grant No.60906038)
文摘A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed, adopting field implant (FI) and multiple field plate (MFP) technologies. The breakdown mechanisms of back gate (BG) turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μm thick thin-layer SOI.
基金Sponsored by the 873 Plan by Ministry of Science and Technology of China ( 2006AA12Z1137)CSSAR Innovation Project ( 2007)
文摘The compact ortho-mode transducer (OMT) and compact conical corrugated horn(CCCH) are used as feeding system of the deployable dual polarizing antenna in this paper.A new stricture of double-septum in main wave guide OMT is proposed. The finite difference method in time domain (FDTD) in combination with genetic algorithms(GAs) is used to analysis and optimize this new OMT. The experiment results show that the voltage standing wave ratio (VSWR) of this OMT and feeding system is less than 1.17 in bandwidth; the isolation between the ortho-mode ports is less than -40dB; the cross-polar level of the feed can reach -35dB and the length of the main waveguide can be reduced 50% at least.