Temperature characterizations of silica asymmetric Mach–Zehnder interferometer chip for quantum key distribution

Quantum key distribution(QKD)system based on passive silica planar lightwave circuit(PLC)asymmetric Mach–Zehnder interferometers(AMZI)is characterized with thermal stability,low loss and sufficient integration scalability.However,waveguide stresses,both intrinsic and temperature-induced stresses,have significant impacts on the stable operation of the system.We have designed silica AMZI chips of 400 ps delay,with bend waveguides length equalized for both long and short arms to balance the stresses thereof.The temperature characteristics of the silica PLC AMZI chip are studied.The interference visibility at the single photon level is kept higher than 95%over a wide temperature range of 12℃.The delay time change is 0.321 ps within a temperature change of 40℃.The spectral shift is 0.0011 nm/0.1℃.Temperature-induced delay time and peak wavelength variations do not affect the interference visibility.The experiment results demonstrate the advantage of being tolerant to chip temperature fluctuations.

Investigation of a Pressure Sensor with Temperature Compensation Using Two Concentric Wheatstone-Bridge Circuits

This study presents a silicon-based pressure sensor with temperature compensation. The eight piezoresistors were designed on the polycrystalline silicon membrane and constructed by two concentric Wheatstone-bridge circuits to perform two sets of sensors. The sensor in the central circuit measures the membrane deflection caused by the combined effects of pressure and temperature, while the outer one measures only the deflection caused by the working temperature. From this arrangement, it is reliable and accurate to measure the pressure by comparing the output signals from the two concentric Wheatstone-bridge circuits. The optimal positions of the eight piezoresistors were simulated by simulation software ANSYS. The investigated pressure sensor was fabricated by the micro electro-mechanical systems (MEMS) techniques. The measuring performance and an indication of the conventional single Wheatstone-bridge pressure sensor is easily affected under variation of different working temperature and causes a maximum absolute error up to 45.5%, while the double Wheatstone-bridge pressure sensor is able to compensate the error, and reduces it down to 1.13%. The results in this paper demonstrate an effective temperature compensation performance, and have a great performance and stability in the pressure measuring system as well.

A novel voltage output integrated circuit temperature sensor

The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

Quantum fluctuation in excited states of mesoscopic LC circuits at finite temperature

We discuss quantum fluctuation in excited states （named thermo number states） of mesoscopic LC circuits at a finite temperature. By introducing the coherent thermo state into the thermo field dynamics pioneered by Umezawa and using the natural representation of thermo squeezing operator we can concisely derive the fluctuation. The result shows that the noise becomes larger when either temperature or the excitation number increases.

Optimization of low-temperature alkaline smelting process of crushed metal enrichment originated from waste printed circuit boards

A novel low-temperature alkaline smelting process is proposed to convert and separate amphoteric metals in crushed metal enrichment originated from waste printed circuit boards. The central composite design was used to optimize the operating parameters,in which mass ratio of Na OH-to-CME, smelting temperature and smelting time were chosen as the variables, and the conversions of amphoteric metals tin, lead, aluminum and zinc were response parameters. Second-order polynomial models of high significance and3 D response surface plots were constructed to show the relationship between the responses and the variables. Optimum area of80%-85% Pb conversion and over 95% Sn conversion was obtained by the overlaid contours at mass ratio of Na OH-to-CME of4.5-5.0, smelting temperature of 653-723 K, smelting time of 90-120 min. The models were validated experimentally in the optimum area, and the results demonstrate that these models are reliable and accurate in predicting the smelting process.

A Temperature Prediction Model for Oil-immersed Transformer Based on Thermal-circuit Theory

This paper proposed an improved temperature prediction model for oil-immersed transformer.The influences of the environmental temperature and heat-sinking capability changing with temperature were considered.When calculating the heat dissipation from the transformer tank to surroundings,the average oil temperature was selected as the node value in the thermal circuit.The new thermal models will be validated with the delivery experimental data of three transformers: a 220 kV-300 MV.A unit,a 110 kV40 MV.A unit and a 220 kV-75 MV.A unit.Meanwhile,the results from the proposed model were also compared with two methods recommended in the IEC loading guide.

ANALYSIS OF DC CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE

Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.

ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE

Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures.

TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS

This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC：H layers and i-a-Si：H layers to the open circuit voltage of p-i-n type a-Si：H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC：H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC：H films optimized at the ＂low-power regime＂ under low silane flow rates and high hydrogen dilution conditions.

Analysis of Temperature Rise in High-Speed Permanent Magnet Synchronous Traction Motors by Coupling the Equivalent Thermal Circuit Method and Computational Fluid Dynamics

To solve the problem of temperature rise caused by the high power density of high-speed permanent magnet synchronous traction motors,the temperature rise of various components in the motor is analyzed by coupling the equivalent thermal circuit method and computational fluid dynamics.Also,a cooling strategy is proposed to solve the problem of temperature rise,which is expected to prolong the service life of these devices.First,the theoretical bases of the approaches used to study heat transfer and fluid mechanics are discussed,then the fluid flow for the considered motor is analyzed,and the equivalent thermal circuit method is introduced for the calculation of the temperature rise.Finally,the stator,rotor loss,motor temperature rise,and the proposed cooling method are also explored through experiments.According to the results,the stator temperature at 50,000 r/min and 60,000 r/min at no-load operation is 68℃ and 76℃,respectively.By monitoring the temperature of the air outlets inside and outside the motor at different speeds,it is also found that the motor reaches a stable temperature rise after 65 min of operation.Coupling of the thermal circuit method and computational fluid dynamics is a strategy that can provide the average temperature rise of each component and can also comprehensively calculate the temperature of each local point.We conclude that a hybrid cooling strategy based on axial air cooling of the inner air duct of the motor and water cooling of the stator can meet the design requirements for the ventilation and cooling of this type of motors.

Stability of operation versus temperature of a three-phase clock-driven chaotic circuit

We evaluate the influence of temperature on the behavior of a three-phase clock-driven metal–oxide–semiconductor （MOS） chaotic circuit. The chaotic circuit consists of two nonlinear functions, a level shifter, and three sample and hold blocks. It is necessary to analyze a CMOS-based chaotic circuit with respect to variation in temperature for stability because the circuit is sensitive to the behavior of the circuit design parameters. The temperature dependence of the proposed chaotic circuit is investigated via the simulation program with integrated circuit emphasis （SPICE） using 0.6-μm CMOS process technology with a 5-V power supply and a 20-kHz clock frequency. The simulation results demonstrate the effects of temperature on the chaotic dynamics of the proposed chaotic circuit. The time series, frequency spectra, bifurcation phenomena, and Lyapunov exponent results are provided.

Influence analysis of local heat source on internal temperature distribution of power transformer

Oil immersed power transformer is the main electrical equipment in power system.Its operation reliability has an important impact on the safe operation of power system.In the process of production,installation and operation,its insulation structure may be damaged,resulting in partial discharge and even breakdown inside the transformer.In this paper,S9-M-100/10 oil immersed distribution transformer is taken as the research object,and the distribution laws of electromagnetic field and temperature field in transformer under normal operation,inter turn short circuit and inter layer short circuit are simulated and analyzed.The simulation results show that under normal conditions,the temperatures at the oil gap between the transformer core and the high and low voltage windings and the middle position of the high-voltage winding are high.When there are inter turn and inter layer short circuit faults,the electromagnetic loss of the fault part of the transformer increases,and the temperature rises suddenly.The influence of the two faults on the internal temperature field of the transformer is different,and the influence of the inter turn short circuit fault on the temperature nearby is obvious.The analysis results can provide reference for the thermal fault interpretation and fault classification of transformer.

Temperature Effects on the Electrical Performance of Large Area Multicrystalline Silicon Solar Cells Using the Current Shunt Measuring Technique

The temperature effects on the electrical performance of a large area multicrystalline silicon solar cell with back-contact technology have been studied in a desert area under ambient conditions using the current shunt measuring technique. Therefore, most of the problems encountered with traditional measuring techniques are avoided. The temperature dependency of the current shunt from 5oC up to 50oC has been investigated. Its temperature coefficient proves to be negligible which means that the temperature dependency of the solar cell is completely independent of the current shunt. The solar module installed in a tilted position at the optimum angle of the location, has been tested in two different seasons (winter and summer). The obtained solar cell short circuit current, open circuit voltage and output power are correlated with the measured incident radiation in both seasons and all results are discussed.

Research on key techniques of expendable conductivity temperature depth measuring system

This paper analysis the developing of expendable conductivity temperature depth measuring system(XCTD)and introduce its principle of measuring about temperature,salinity and depth of ocean.Some key techniques are put forward.According to the real needs of XCTD,conductivity sensor with high sensitivity is designed by principle of electromagnetic induce,the ocean conductivity from induced electromotive force has been calculated.Adding temperature correction circuit would help to reduce error of conductivity measurement because of sharply changing temperature.Advanced temperature measuring circuit of high precision and the constant current source is used to weaken effect of self-heating of resistance and fluctuation of the source.On respect of remote data transmission,LVDS is a good choice for the purpose of guarantee the quality of data transmitted and the transmission distance is reaching to thousand meters in the seawater.Modular programming method is also brought into this research aimed at improve the stability,reliability and maintainability of the whole measuring system.In February,2015,the trials in South China Sea demonstrate that the developed XCTD realize effective measurement at a speed of 6 knots and detection depth at 800 m.The consistency coefficient of the acquired data is greater than 0.99 and the success rate of probe launching is above 90%.

基于单片机和PID算法的温度智能控制系统设计

为提高温度控制的智能化水平,设计一种智能温度控制系统。该系统以STC89C52单片机为控制器,采用PID算法控制温度,具有语音播报和手机远程控制等功能。采用DS18B20温度传感器采集环境温度;设计LCD12864显示电路实时显示当前温度、温度上下限以及温度状态;设计WT588D语音提醒电路,当测量温度小于下限或大于上限时发出语音提醒;设计按键电路实现温度上下限值的设定;设计蓝牙通信电路,与手机APP通信,实现远程控制;采用PID算法输出控制量,控制固态继电器驱动加热或降温装置,实现温度控制。其次,对温度控制系统的硬件和软件进行设计,并制作实物进行运行测试。实验结果表明,所设计的温度控制系统能够很好地实现温度控制,从而达到预期效果,且操作方便、成本低,具有较强的应用价值。

高精度NiCr/NiSi薄膜热电偶高温测试系统

针对航空发动机涡轮叶片和燃烧室内壁等高温恶劣环境下对温度测量的迫切需求,提出了一种基于薄膜热电偶的高精度测温方法。采用磁控溅射法在SiC衬底上制备了NiCr/NiSi薄膜热电偶。完成了薄膜热电偶的设计与制备,并设计了一套高精度温度数据采集系统,主控芯片采用STM32,数据采集芯片采用16位高精度芯片ADS1118,实现了对高温恶劣环境下温度数据的实时采集。结果表明:设计制备的NiCr/NiSi薄膜热电偶能够实现-40~1000℃温度区间稳定测温,高精度测温系统与标准温度测量系统相比误差优于±0.4%,为高温恶劣环境下温度测量提供了有效且可靠的解决方法。

基于磁性传感器的低失调温度补偿接口电路设计

面向磁性传感器在物联网(IoT)技术中的广泛应用,该文基于180 nm CMOS工艺设计了一种具有低失调电压,低温度漂移特性的霍尔传感器接口电路。针对霍尔传感器灵敏度的温度漂移特性,该文设计了一种感温电路并与查表法相结合,调节可编程增益放大器(PGA)的增益有效地降低了霍尔传感器的温度系数(TC)。在此基础上,通过在信号主通路中使用相关双采样(CDS)技术,极大程度上消除了霍尔传感器的失调电压。仿真结果表明,在–40°C~125°C温度范围内,霍尔传感器的TC从966.4 ppm/°C减小到了58.1 ppm/°C。信号主通路的流片结果表明,霍尔传感器的失调电压从25 mV左右减小到了4 mV左右,霍尔传感器的非线性误差为0.50%。芯片的总面积为0.69 mm^(2)。

高温气冷堆热态功能试验中一回路加热动态特性研究

高温气冷堆反应堆压力容器堆内构件由石墨和碳化硼烧结陶瓷材料组成,热态功能试验过程中需对一回路堆内构件进行加热除湿。针对高温气冷堆一回路热试系统特点,采用COMSOL Multiphysics 5.4计算软件构建了压力容器、蒸汽发生器和主氦风机三维数值模型,并通过示范工程加热试验值验证了模型的可靠性,并获得了一回路加热过程中温度场动态特性。为了解决高温气冷堆示范工程一回路首次加热效率低的问题,提出了将辅助蒸汽通入到蒸汽发生器,并动态调整辅助蒸汽运行参数来加热一回路氦气的方法,结果表明:相较于主氦风机单独加热方式,外加辅助蒸汽热源可节省加热时间约31.3 h,同时可将堆芯最终平衡温度由250℃提高至265℃;在满足运行准则的前提下,更有利于碳砖和石墨堆内构件的除湿。该研究结果为高温气冷堆一回路热试提供了有力支持。

煤矿氧气检测高精度VCSEL驱动及温控电路设计

为解决当前常用煤矿氧气检测仪器易受交叉气体干扰且功耗大的问题,基于GD32F303RCT6微控制器和ADN8834热电冷却控制器,设计了一种软启动开关电路控制的垂直腔面发射激光器(Vertical-cavity Surface-emitting Laser,VCSEL)高精度驱动及温控电路。驱动电路中,高频正弦波信号和低频锯齿波信号叠加的二进制数据由微控制器产生,经信号发生电路、电压电流转换电路转化成VCSEL高精度驱动电流信号;温控电路中,设计基于比例积分微分(Proportional Integral Differential,PID)补偿电路和数模转换控制器(Digital to Analog Converter,DAC)目标温度控制电路实现激光器温度自动调节。测试结果表明:驱动电路的电流输出区间为0.680~1.360 mA;锯齿波频率误差小于0.5%,正弦波频率误差小于0.1%;氧气吸收峰扫描精度高达0.07 pm,对应电流扫描精度为0.12μA;温控电路的温度控制精度为±0.012℃。满足了可调谐半导体激光吸收光谱(Tunable Diode Laser Absorption Spectroscopy,TDLAS)煤矿氧气检测应用需求。