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A Discussion on the Practical Teaching Reform of Intelligent Mobile Terminal Technology Course
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作者 Xiaoyu Chu Jian Wu 《Journal of Contemporary Educational Research》 2022年第8期16-22,共7页
In this intelligent era,there is a high market demand for professional engineering talents in the computer industry.Based on engineering education accreditation,this paper briefly discusses the practical teaching refo... In this intelligent era,there is a high market demand for professional engineering talents in the computer industry.Based on engineering education accreditation,this paper briefly discusses the practical teaching reform of the intelligent mobile terminal technology course,which involves integrating theory with practical,taking students as the center,focusing on practical teaching,strengthening students’practical skills and computer application development skills,as well as promoting the construction and development of engineering accreditation. 展开更多
关键词 New engineering Engineering education professional certification Intelligent mobile terminal technology Practical teaching Curriculum reform
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode 被引量:1
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作者 黄健华 吕红亮 +4 位作者 张玉明 张义门 汤晓燕 陈丰平 宋庆文 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第11期530-533,共4页
In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimi... In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage. 展开更多
关键词 4H-SIC merged PiN/Schottky diode junction termination technology breakdown volt-age
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