Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche d...Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.展开更多
The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was investigated.TCAD simulation demonstrates that th...The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was investigated.TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μm.It is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias voltage.Although the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring region.By comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise performance.Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.展开更多
Transport properties in a multi-terminal regular polygonal quantum ring with Rashba spin-orbit coupling （SOC） are investigated analytically using quantum networks and the transport matrix metLod. The results show th...Transport properties in a multi-terminal regular polygonal quantum ring with Rashba spin-orbit coupling （SOC） are investigated analytically using quantum networks and the transport matrix metLod. The results show that conduc- tances remain at exactly the same values when the output leads are located at axisymmetric positions. However, for the nonaxisymmetrical case, there is a phase difference between the upper and lower arm, which leads to zero conductances appearing periodically. An isotropy of the conductance is destroyed by the Rashba SOC effect in the axisymmetric case. In addition, the position of zero conductance is regulated with the strength of the Rashba SOC.展开更多
Rana kunyuensis is a species of brown frog that lives exclusively on Kunyu Mountain,Yantai,China.In the current study,a 279-bp cDNA sequence encoding a novel antimicrobial peptide (AMP),designated as amurin-9KY,was cl...Rana kunyuensis is a species of brown frog that lives exclusively on Kunyu Mountain,Yantai,China.In the current study,a 279-bp cDNA sequence encoding a novel antimicrobial peptide (AMP),designated as amurin-9KY,was cloned from synthesized double-strand skin cDNA of R.kunyuensis.The amurin-9KY precursor was composed of 62 amino acid (aa) residues,whereas the mature peptide was composed of 14 aa and contained two cysteines forming a C-terminal heptapeptide ring (Rana box domain) and an amidated C-terminus.These structural characters represent a novel amphibian AMP family.Although amurin-9KY exhibited high similarity to the already identified amurin-9AM from R.amurensis,little is known about the structures and activities of amurin-9 family AMPs so far.Therefore,amurin-9KY and its three derivatives (amurin-9KY1-3) were designed and synthesized.The structures and activities were examined to evaluate the influence of C-terminal amidation and the heptapeptide ring on the activities and structure of amurin-9KY..Results indicated that C-terminal amidation was essential for antimicrobial activity,whereas both C-terminal amidation and the heptapeptide ring played roles in the low hemolytic activity.Circular dichroism (CD) spectra showed that the four peptides adopted an α-helical conformation in THF/H2O (v/v 1∶1) solution,but a random coil in aqueous solution.Elimination of the C-terminal heptapeptide ring generated two free cysteine residues with unpaired thiol groups,which greatly increased the concentration-dependent anti-oxidant activity.Scanning electron microscopy (SEM) was also performed to determine the possible bactericidal mechanisms.展开更多
Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitanc...Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.展开更多
This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulat...This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 × 10^15 cm^-3. P^＋ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.展开更多
文摘Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.
基金supported by the Jiangsu Agricultural Science and Technology Innovation Fund of China(No.CX(21)3062)the National Natural Science Foundation of China(No.62171233).
文摘The influence of the virtual guard ring width(GRW)on the performance of the p-well/deep n-well single-photon avalanche diode(SPAD)in a 180 nm standard CMOS process was investigated.TCAD simulation demonstrates that the electric field strength and current density in the guard ring are obviously enhanced when GRW is decreased to 1μm.It is experimentally found that,compared with an SPAD with GRW=2μm,the dark count rate(DCR)and afterpulsing probability(AP)of the SPAD with GRW=1μm is significantly increased by 2.7 times and twofold,respectively,meanwhile,its photon detection probability(PDP)is saturated and hard to be promoted at over 2 V excess bias voltage.Although the fill factor(FF)can be enlarged by reducing GRW,the dark noise of devices is negatively affected due to the enhanced trap-assisted tunneling(TAT)effect in the 1μm guard ring region.By comparison,the SPAD with GRW=2μm can achieve a better trade-off between the FF and noise performance.Our study provides a design guideline for guard rings to realize a low-noise SPAD for large-array applications.
基金Project supported by the National Natural Science Foundation of China(Grant No.61176089)Hebei Provincial Natural Science Foundation,China(Grant No.A2011205092)
文摘Transport properties in a multi-terminal regular polygonal quantum ring with Rashba spin-orbit coupling （SOC） are investigated analytically using quantum networks and the transport matrix metLod. The results show that conduc- tances remain at exactly the same values when the output leads are located at axisymmetric positions. However, for the nonaxisymmetrical case, there is a phase difference between the upper and lower arm, which leads to zero conductances appearing periodically. An isotropy of the conductance is destroyed by the Rashba SOC effect in the axisymmetric case. In addition, the position of zero conductance is regulated with the strength of the Rashba SOC.
基金supported by grants from the National Natural Science Foundation of China(31772455)Natural Science Foundation of Jiangsu Province(BK20160336and BK20171214)+1 种基金Natural Science Foundation of College in Jiangsu Province(16KJB350004)Suzhou Science and Technology Development Project(SYN201504 and SNG2017045)
文摘Rana kunyuensis is a species of brown frog that lives exclusively on Kunyu Mountain,Yantai,China.In the current study,a 279-bp cDNA sequence encoding a novel antimicrobial peptide (AMP),designated as amurin-9KY,was cloned from synthesized double-strand skin cDNA of R.kunyuensis.The amurin-9KY precursor was composed of 62 amino acid (aa) residues,whereas the mature peptide was composed of 14 aa and contained two cysteines forming a C-terminal heptapeptide ring (Rana box domain) and an amidated C-terminus.These structural characters represent a novel amphibian AMP family.Although amurin-9KY exhibited high similarity to the already identified amurin-9AM from R.amurensis,little is known about the structures and activities of amurin-9 family AMPs so far.Therefore,amurin-9KY and its three derivatives (amurin-9KY1-3) were designed and synthesized.The structures and activities were examined to evaluate the influence of C-terminal amidation and the heptapeptide ring on the activities and structure of amurin-9KY..Results indicated that C-terminal amidation was essential for antimicrobial activity,whereas both C-terminal amidation and the heptapeptide ring played roles in the low hemolytic activity.Circular dichroism (CD) spectra showed that the four peptides adopted an α-helical conformation in THF/H2O (v/v 1∶1) solution,but a random coil in aqueous solution.Elimination of the C-terminal heptapeptide ring generated two free cysteine residues with unpaired thiol groups,which greatly increased the concentration-dependent anti-oxidant activity.Scanning electron microscopy (SEM) was also performed to determine the possible bactericidal mechanisms.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB0104701)。
文摘Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.
基金supported by the National High Technology Research and Development Program of China(No.2011AA050401)the Project of State Grid Corporation of China(No.SGRIDGKJ[2013]210)
文摘This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 × 10^15 cm^-3. P^＋ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.
