For high strength interstitial free （IF） steel containing P element, the salt and pepper （SP） defects exist on the strip surface and could not be eliminated effectively by optimizing the hot rolling process, such ...For high strength interstitial free （IF） steel containing P element, the salt and pepper （SP） defects exist on the strip surface and could not be eliminated effectively by optimizing the hot rolling process, such as temperature and cooling water. The combination effect of Si and P on the characteristic of tertiary scale has been studied comprehensively by scanning electron microscopy （SEM） and electron probe microanalysis （EPMA）, and the concept is proposed firstly that Si and P are of combination effect which can be utilized to eliminate the SP defect. The results show that the SP defects were induced by the rolled-in scale during finish rolling. P can be enriched at the interface between substrate and tertiary scale, which is easy to decrease the adhesion of tertiary scale. However, Si enrichment at the interface between substrate and tertiary scale can increase the adhesion. The SP defects can be eliminated completely, which is attributed to the accompanying enrichment of Si and P.展开更多
文摘For high strength interstitial free （IF） steel containing P element, the salt and pepper （SP） defects exist on the strip surface and could not be eliminated effectively by optimizing the hot rolling process, such as temperature and cooling water. The combination effect of Si and P on the characteristic of tertiary scale has been studied comprehensively by scanning electron microscopy （SEM） and electron probe microanalysis （EPMA）, and the concept is proposed firstly that Si and P are of combination effect which can be utilized to eliminate the SP defect. The results show that the SP defects were induced by the rolled-in scale during finish rolling. P can be enriched at the interface between substrate and tertiary scale, which is easy to decrease the adhesion of tertiary scale. However, Si enrichment at the interface between substrate and tertiary scale can increase the adhesion. The SP defects can be eliminated completely, which is attributed to the accompanying enrichment of Si and P.
