An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates o...An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm·min-1 and 0.5nm·min-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.展开更多
In this paper,the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide(TMAH) solution with isopropyl alcohol(IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A s...In this paper,the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide(TMAH) solution with isopropyl alcohol(IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A series of experiments are performed by changing TMAH concentration,IPA concentration,etching temperature and etching time. The structure of inverted trapezoidal patterns and roughness of the bottom surface are characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM). The results show that with TMAH concentration increases,the roughness of bottom surface will decrease. The addition of IPA into TMAH solution improves the morphology of the bottom surface significantly. Low temperature is beneficial to get a smooth bottom surface. Furthermore,etching time can change the bottom surface roughness. A model is proposed to explain the etching processes. The hillock area ratio of the bottom surface has the same tendency as the etching area ratio. Finally,smooth silicon inverted trapezoidal patterns are obtained for epitaxial growth of Ga N-based light emitting diode(LED) devices.展开更多
文摘An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm·min-1 and 0.5nm·min-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.
基金supported by the National Natural Science Foundation of China(Nos.51472229,61422405,51202238,61306051 and 61474109)the “100 Talent Program” of Chinese Academy of Sciencesthe Opening Funding of State Key Lab of Silicon Materials(No.SKL2014-4)
文摘In this paper,the anisotropic etching process of Si(100) wafers in tetramethyl ammonium hydroxide(TMAH) solution with isopropyl alcohol(IPA) is investigated in detail. An inverted trapezoidal pattern is developed. A series of experiments are performed by changing TMAH concentration,IPA concentration,etching temperature and etching time. The structure of inverted trapezoidal patterns and roughness of the bottom surface are characterized by scanning electron microscopy(SEM) and atomic force microscopy(AFM). The results show that with TMAH concentration increases,the roughness of bottom surface will decrease. The addition of IPA into TMAH solution improves the morphology of the bottom surface significantly. Low temperature is beneficial to get a smooth bottom surface. Furthermore,etching time can change the bottom surface roughness. A model is proposed to explain the etching processes. The hillock area ratio of the bottom surface has the same tendency as the etching area ratio. Finally,smooth silicon inverted trapezoidal patterns are obtained for epitaxial growth of Ga N-based light emitting diode(LED) devices.
