Trench型N-Channel MOSFET低剂量率效应研究

基于抗辐射100V Trench型N-Channel MOSFET开展了不同剂量率的总剂量辐射实验并进行了分析,创新性提出了器件随低剂量率累积以及不同偏置状态下的变化趋势和机理,给出了器件实验前后的转移曲线和直流参数,进行了二维数值仿真比较,证明了实验和仿真的一致性。研究表明:随高剂量率的剂量增加,器件阈值电压(V_(TH))发生了明显负向漂移现象,导通电阻(R_(DSON))出现5%左右的降低,击穿电压(BV_(DS))保持基本不变;低剂量率下总剂量效应与高剂量率有明显不同,阈值电压漂移量减小,同时出现正向漂移现象;此时导通电阻(R_(DSON))和击穿电压(BV_(DS))较高剂量率变化量进一步下降。研究认为,低剂量率下器件界面缺陷电荷增加变多,使得阈值电压的漂移方向发生改变,同时低剂量率实验周期是高剂量率的500倍,退火效应也较高剂量率的明显,导致器件参数辐射前后差异性减小。

The Origins of the Arc-Shaped Langshan Uplift and Linhe Trench

In the northern part of the Ordos Basin, there is a 325 km long arc-shaped Langshan uplift and a 15 km-deep Linhe Trench in front of Langshan, which are rare geological phenomena for which origins no one has explained. This article comprehensively analyzes the research achievements over the past 40 years of geology, geomorphology, seismic exploration, paleogeography, and oil and gas exploration in the Ordos Basin and Langshan. It recognizes that the northern part of the Ordos Basin experienced a meteorite impact in the Late Cretaceous period. The impact pushed the block northwest ward, subducting after colliding with igneous rocks in the north. This sudden event formed a clear arc-shaped mountain zone in the north and a wedge-shaped trench in front of the mountain. The chaotic layers, prolonged and continuous faults, and numerous thrust layers in the Langshan, a negative anomaly area in the center of the northern Ordos, abnormal orientation of crystalline basement structures in the north of Ordos, Moho uplift, and distribution of meteorite fragments in the northwest of Langshan, all of these geological phenomena support the occurrence of the meteorite impact event, forming the arc-shaped Langshan and the Trench.

Blast injury risks to humans within a military trench

In land warfare,trenches serve as vital defensive fortifications,offering protection to soldiers while engaging in combat.However,despite their protective function,soldiers often sustain injuries within these trenches.The lack of corresponding blast data alongside empirical injury reports presents a significant knowledge gap,particularly concerning the blast pressures propagating within trench spaces following nearby explosions.This absence hinders the correlation between blast parameters,trench geometry,and reported injury cases,limiting our understanding of blast-related risks within trenches.This paper addresses the critical aspect of blast propagation within trench systems,essential for evaluating potential blast injury risks to individuals within these structures.Through advanced computational fluid dynamics(CFD)simulations,the study comprehensively investigates blast injury risks resulting from explosions near military trenches.Employing a sophisticated computational model,the research analyzes the dynamic blast effects within trenches,considering both geometrical parameters and blast characteristics influenced by explosive weight and scaled distance.The numerical simulations yield valuable insights into the impact of these parameters on blast injury risks,particularly focusing on eardrum rupture,lung injury,and traumatic brain injury levels within the trench.The findings elucidate distinct patterns of high-risk zones,highlighting unique characteristics of internal explosions due to confinement and venting dynamics along the trench.This study underscores the significance of detailed numerical modeling in assessing blast injury risks and provides a novel knowledge base for understanding risks associated with explosives detonating near military trenches.The insights gained contribute to enhancing safety measures in both military and civilian contexts exposed to blast events near trench structures.

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.

一种抗辐射Trench型N 30 V MOSFET器件设计

由于Trench结构在降低元胞单元尺寸、提升沟道密度和消除JFET区电阻等方面的优势,Trench型MOSFET已广泛应用于低压产品领域。在研究抗辐射机理和抗辐射加固技术的基础上,设计了一款新型抗辐射Trench型N30VMOSFET器件。实验结果显示,产品击穿电压典型值达42V,特征导通电阻为51mΩ·mm^(2)。在^(60)Co γ射线100krad(Si)条件下,器件阈值电压漂移仅为-0.3V,漏源漏电流从34nA仅上升到60nA。采用能量为2006MeV、硅中射程为116μm、线性能量传输(LET)值为75.4MeV·cm^(2)/mg的^(118)Ta离子垂直入射该器件,未发生单粒子事件。

Trench MOSFET的研究与进展

研究总结了功率MOSFET器件与BJT器件相比的发展优势。介绍了作为VDMOSFET进一步发展的新型器件Trench MOSFET研究提出的背景及意义,并从其基本结构出发阐述了Trench MOSFET与VDMOS相比的电学性能特点。最后对其发展现状,关键技术和结构参数及其发展趋势进行了概括、总结和展望。

射频功率Trench MOSFET研制

在国内首次研制出了一种采用条状元胞结构、特殊的栅槽刻蚀条件、特殊的栅介质生长前处理工艺及多晶硅栅的射频功率Trench MOSFET器件。该器件漏源击穿电压大于62V、漏极电流大于3．0A、跨导大于0．8S、阂值电压2～3V、导通电阻比同样条件的VDMOS降低了19％～43％，在175MHz、VDS=12VTN出功率Po为7W、漏极效率ηD为44％、功率增益GP为10dB。

基于载流子抽取模型的Trench Gate/Field-stop IGBT驱动器有源箝位功能分析

针对Trench gate/Field-stop IGBT结构特有的关断过程中集电极电流下降率不可控问题,引入了载流子抽取模型来模拟器件关断过程中的集电极电流下降阶段器件内部载流子的动态行为特性,并以此为基础分析了驱动器为适应Trench gate/Field-Stop IGBT结构这种关断特性而引入的有源箝位功能的作用机理,验证了载流子抽取模型在器件级与电路级交互作用分析中的实用性,为后续实现器件与电路的最佳匹配奠定了基础。

大田水肥一体化混肥器设计与试验研究

由于当前市场上没有既适合大田大面积灌溉、混肥精度又高的水肥一体化系统,故在旁路式结构设计中增加静态混合器替换主管道,以提高混肥均匀性为重点进行研究,对混肥部件进行了优化改进。利用混合器自身结构,在不需要外接能源的条件下,使得水肥充分混合,不仅能够满足大面积灌溉要求,而且可以保证混肥精度。基于流体力学及CFD基本原理,通过Fluent软件分析水肥混合过程中SK型静态混合器混合单元数,以及长径比对水肥混合性能和压降的影响,以此找出混合器的最佳结构参数,并对其结构做了改进,设计出了开沟式静态混合器。

Trench MOS Controlled Thyristor

A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load.

A Novel Polysilicon and Oxide Sandwich Deep Trench with Field Limiting Ring for RF Power Transistors

A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0～100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance.

短沟Trench MOSFET阈值电压解析模型

传统MOS器件的阈值电压模型被广泛地用于分析Trench MOSFET的阈值电压,这种模型对于长沟道和均匀分布衬底的MOS器件来说很合适,但是对于Trench MOSFET器件来说却显现出越来越多的问题,这是因为Trench MOSFET的沟道方向是垂直的,其杂质分布也是非均匀的。本文基于二维电荷共享模型,给出了Trench MOSFET的一种新的阈值电压解析模型,该模型反映了器件的阈值电压随不同结构和工艺参数变化的规律,模型的结果和器件仿真软件Sivaco TCAD的仿真结果吻合较好。该模型较好地解决了以往所用的Trench MOSFET阈值电压模型计算不准确的问题。

部分埋氧的超结Trench VDMOS的设计与研究

在原有的超结Trench VDMOS技术的基础上引入部分埋氧层,设计了一种新型的部分埋氧的抗辐照超结沟槽功率器件。在Sentaurus TCAD软件环境下,使用SDE和Sdevice仿真模拟,通过调节部分埋氧层的长度,埋氧深度以及厚度等参数,对其耐压,导通电阻,动态特性以及抗辐照能力进行仿真和分析。当埋氧层深度为0.8 μm,埋氧层长度0.4 μm,其耐压相对于传统的超结Trench VDMOS提高了10%, Vgate=4.5V时Rdson为7.74E4 Ω·μm,器件抗辐照能力大大提高。

Analysis and design of open trench barriers in screening steady-state surface vibrations

The problem of vibration isolation by rectangular open trenches in a plane strain context is numerically studied using a finite element code, PLAXIS. The soil media is assumed to be linear elastic, isotropic, and homogeneous subjected to a vertical harmonic load producing steady-state vibration. The present model is validated by comparing it with previously published works. The key geometrical features of a trench, i.e., its depth, width, and distance from the source of excitation, are normalized with respect to the Rayleigh wavelength. The attenuation of vertical and horizontal components of vibration is studied for various trench dimensions against trench locations varied from an active to a passive case. Results are depicted in non-dimensional forms and conclusions are drawn regarding the effects of geometrical parameters in attenuating vertical and horizontal vibration components. The screening efficiency is primarily governed by the normalized depth of the barrier. The effect of width has little significance except in some specific cases. Simplified regression models are developed to estimate average amplitude reduction factors. The models applicable to vertical vibration cases are found to be in excellent agreement with previously published results.

Microbial diversity in the sediments of the southern Mariana Trench

Microbial diversity in the abyssal sediments beneath the seafloor of 30,94,and 151cm near the southern end of the Mariana Trench was analyzed in the Illumina HiSeq 2500 platform.Results show that the microbial populations were dominated by bacteria but merely no archaea were identifi ed at the three depths.In the bacterial community,Proteobacteria and Firmicutes dominated the total taxon tags,followed by Bacteroidetes,Actinobacteria,Planctomycetes,Cyanobacteria,and Chloroflexi,which together account for over 99%of the total population.Similar to that in the seawater in the trench,the operational taxonomic units(OTUs)belonging to Gammaproteobacteria from the sediment samples showed high abundance.However,common bacterial OTUs in the water of the trench including Nitrospirae and Marinimicrobia were hardly found in the sediments from the southern Mariana Trench or the hadal region.Therefore,this study documented for the first time the compositions of microbial diversity in the trench sediments,revealed the difference in microbial diversity in water and sediment of the trench and will enrich the knowledge on the microbial diversity in the abyssal areas.

An oxide filled extended trench gate super junction MOSFET structure

This paper proposes an oxide filled extended trench gate super junction （SJ） MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.

Composition and origin of lipid biomarkers in the surface sediments from the southern Challenger Deep, Mariana Trench

The surface sediments collected from the southern Mariana Trench at water depths between ca.4900 m and 7068 m were studied using lipid biomarker analyses to reveal the origin and distribution of organic matters. For all samples, an unresolved complex mixture(UCM) was present in the hydrocarbon fractions, wherein resistant component tricyclic terpanes were detected but C_(27)-C _(29) regular steranes and hopanes indicative of a higher molecular weight range of petroleum were almost absent.This biomarker distribution patterns suggested that the UCM and tricyclic terpanes may be introduced by contamination of diesel fuels or shipping activities and oil seepage elsewhere. The well-developed faults and strike-slip faults in the Mariana subduction zone may serve as passages for the petroleum hydrocarbons. In addition, the relative high contents of even n-alkanes and low Carbon Preference Indices indicated that the n-alkanes were mainly derived from bacteria or algae. For GDGTs, the predominance of GDGT-0 and crenarchaeol, together with low GDGT-0/Crenarchaeol ratios(ranging from0.86 to 1.64), suggests that the GDGTs in samples from the southern Mariana Trench were mainly derived from planktic Thaumarchaeota. However, the high GDGT-0/crenarchaeol ratio(10.5) in sample BC07 suggests that the GDGTs probably were introduced by methanogens in a more anoxic environment. Furthermore, the n-alkanes C_(19)-C_(22) and the n-fatty acids C_(20:0)-C_(22:0) were depleted in^(13)C by 3‰ compared to n-alkanes C_(16)-C_(18) and the n-fatty acids C_(14:0)-C_(18:0), respectively, which was interpreted to result from the preferential reaction of fatty acid fragments with carbon "lighter" terminal carboxyl groups during carbon chain elongation from the precursors to products. The abundance of total alkanes, carboxylic acids, alcohols and total lipids were generally increased along the down-going seaward plate, suggesting the lateral organic matter inputs play an important role in organic matter accumulation in hadal trenches. The extremely high contents of biomarkers in sample BC11 were most likely related to trench topography and current dynamics, since the lower steepness caused by graben texture and proximity to the trench axis may result in higher sedimentation rate. This paper, for the first time, showed the biomarker patterns in surface sediments of the Mariana Trench and shed light on biogeochemistry of the hardly reached trench environment.

A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge

A new ultralow gate–drain charge(Q_(GD)) 4 H-SiC trench MOSFET is presented and its mechanism is investigated by simulation. The novel MOSFET features double shielding structures(DS-MOS): one is the grounded split gate(SG), the other is the P+shielding region(PSR). Both the SG and the PSR reduce the coupling effect between the gate and the drain, and transform the most part of the gate–drain capacitance(C_(GD)) into the gate–source capacitance(C_(GS)) and drain–source capacitance(C_(DS)) in series.Thus the C_(GD) is reduced and the proposed DS-MOS obtains ultralow Q_(GD). Compared with the double-trench MOSFET(DT-MOS)and the conventional trench MOSFET(CT-MOS), the proposed DS-MOS decreases the Q_(GD) by 85% and 81%, respectively.Moreover, the figure of merit(FOM), defined as the product of specific on-resistance(R_(on, sp)) and Q_(GD)(R_(on, sp)Q_(GD)), is reduced by 84% and 81%, respectively.

Report of a chiton in the genus Leptochiton (Lepidopleurida:Lepidopleurina:Leptochitonidae) from the Yap Trench in the West Pacific Ocean

Two chiton specimens were collected from sedimentary habitat by China＇s manned Jiaolong submersible diving to a depth of 6 754 m in the north of the Yap Trench. This is a new locality record for chiton. Both morphological and molecular data support that the two specimens are the same species belonging to the genus Leptochiton. Morphologically, this species strongly resembles L. vanbellei and L. deforgesi. Phylogenetically, it has a close evolutionary relationship with L. vanbellei, L. deforgesi and L. boucheti. This is the third deepest record for deepsea chitons so far.