The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite...The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.展开更多
For plane singly-connected domains with insulating boundary and four point-sized contacts, C<sub>0</sub> …C<sub>3</sub>, van der Pauw derived a famous equation relating the two trans-...For plane singly-connected domains with insulating boundary and four point-sized contacts, C<sub>0</sub> …C<sub>3</sub>, van der Pauw derived a famous equation relating the two trans-resistances R<sub>01,23</sub>, R<sub>12,30</sub> with the sheet resistance without any other parameters. If the domain has one hole van der Pauw’s equation becomes an inequality with upper and lower bounds, the envelopes. This was conjectured by Szymański et al. in 2013, and only recently it was proven by Miyoshi et al. with elaborate mathematical tools. The present article gives new proofs closer to physical intuition and partly with simpler mathematics. It relies heavily on conformal transformation and it expresses for the first time the trans-resistances and the lower envelope in terms of Jacobi functions, elliptic integrals, and the modular lambda elliptic function. New simple formulae for the asymptotic limit of a very large hole are also given.展开更多
We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P...We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.展开更多
Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device perform...Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device performance or provide feedback for its synthesis.However, the commonly used methods of extracting carrier mobility from graphene field effect transistor or Hall-bar is time consuming, expensive, and significantly affected by the device fabrication process other than graphene itself.Here we reported a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw–Hall measurement.By annealing graphene in vacuum to remove the adsorbed dopants and then exposing it in ambient surroundings, carrier mobility as a function of density can be measured with the increase of carrier density due to the dopant re-adsorption from the surroundings.Further, the relationship between the carrier mobility and density can be simply fitted with a power equation to the first level approximation, with which any pair of measured carrier mobility and density can be normalized to an arbitrary carrier density for comparison.We experimentally demonstrated the reliability of the method, which is much simpler than making devices and may promote the standard making for graphene characterization.展开更多
The electrical properties of magnetic sensing devices fabricated from anisotropic materials are not easily extracted. Here we present a method for determining the resistance matrix for an anisotropic device with multi...The electrical properties of magnetic sensing devices fabricated from anisotropic materials are not easily extracted. Here we present a method for determining the resistance matrix for an anisotropic device with multiple electrical contacts placed in a perpendicular magnetic field. By using the methods developed by Van der Pauw and Wasscher, the analysis for the anisotropic system is reduced to the equivalent problem for an isotropic sample, which can then be solved using methods developed previously. As a result, the method works in the case of structures with an arbitrary number of asymmetric extended contacts at large magnetic field strength. In addition to the extraction of nonisotropic resistivities, the resistance matrix can be used to analyze the Hall effect for anisotropic plates.展开更多
采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pau...采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.展开更多
文摘The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.
文摘For plane singly-connected domains with insulating boundary and four point-sized contacts, C<sub>0</sub> …C<sub>3</sub>, van der Pauw derived a famous equation relating the two trans-resistances R<sub>01,23</sub>, R<sub>12,30</sub> with the sheet resistance without any other parameters. If the domain has one hole van der Pauw’s equation becomes an inequality with upper and lower bounds, the envelopes. This was conjectured by Szymański et al. in 2013, and only recently it was proven by Miyoshi et al. with elaborate mathematical tools. The present article gives new proofs closer to physical intuition and partly with simpler mathematics. It relies heavily on conformal transformation and it expresses for the first time the trans-resistances and the lower envelope in terms of Jacobi functions, elliptic integrals, and the modular lambda elliptic function. New simple formulae for the asymptotic limit of a very large hole are also given.
基金supported by the Science Fund from the Ministry of Science and Technology of China(Grant No.2013CBA01600)the National Key Research&Development Project of China(Grant No.2016YFA0202300)+1 种基金the National Natural Science Foundation of China(Grant Nos.61474141,61674170,61335006,61390501,51325204,and 51210003)the Chinese Academy of Sciences(CAS) and Youth Innovation Promotion Association of CAS(Grant No.20150005)
文摘We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.
基金supported by the National Natural Science Foundation of China (51772043 and 51802036)the Open Foundation of National Engineering Research Center of Electromagnetic Radiation Control Materials (ZYGX2017K003-3)+2 种基金Sichuan Science and Technology Program (2018GZ0434)the support from the Shenzhen Peacock Plan (1208040050847074)the Office of Naval Research (ONR) support Grant (NAVY N00014-17-1-2973)
文摘Expected for many promising applications in the field of electronics and optoelectronics, a reliable method for the characterization of graphene electrical transport properties is desired to predict its device performance or provide feedback for its synthesis.However, the commonly used methods of extracting carrier mobility from graphene field effect transistor or Hall-bar is time consuming, expensive, and significantly affected by the device fabrication process other than graphene itself.Here we reported a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw–Hall measurement.By annealing graphene in vacuum to remove the adsorbed dopants and then exposing it in ambient surroundings, carrier mobility as a function of density can be measured with the increase of carrier density due to the dopant re-adsorption from the surroundings.Further, the relationship between the carrier mobility and density can be simply fitted with a power equation to the first level approximation, with which any pair of measured carrier mobility and density can be normalized to an arbitrary carrier density for comparison.We experimentally demonstrated the reliability of the method, which is much simpler than making devices and may promote the standard making for graphene characterization.
文摘The electrical properties of magnetic sensing devices fabricated from anisotropic materials are not easily extracted. Here we present a method for determining the resistance matrix for an anisotropic device with multiple electrical contacts placed in a perpendicular magnetic field. By using the methods developed by Van der Pauw and Wasscher, the analysis for the anisotropic system is reduced to the equivalent problem for an isotropic sample, which can then be solved using methods developed previously. As a result, the method works in the case of structures with an arbitrary number of asymmetric extended contacts at large magnetic field strength. In addition to the extraction of nonisotropic resistivities, the resistance matrix can be used to analyze the Hall effect for anisotropic plates.
文摘采用电子束蒸镀方法在Si(100)衬底上沉积了ZnO:Al(ZAO)薄膜.在氧气气氛下对ZnO:Al薄膜进行了退火处理,退火温度的范围为400～800℃.X射线衍射(XRD)图样表明所制备的ZnO:Al薄膜具有六方结构,为c轴(002)择优取向的多晶薄膜.用Van der Pauw法测量了ZAO薄膜的电学特性,结果显示其电导率在500℃达到最大值.测量了ZAO薄膜的室温微区光致发光和变温发光光谱,观测到了ZnO自由激子、束缚在中性施主中心(D0)上的束缚激子以及束缚在离化施主中心(D+0)上的束缚激子发射.
