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Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
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《Chinese Physics B》 SCIE EI CAS CSCD 2012年第3期395-399,共5页
A new analytical model to describe the drain-induced barrier lowering (DIBL) effect has been obtained by solving the two-dimensional (2D) Poisson's equation for the dual-channel 4H-SiC MESFET (DCFET). Using thi... A new analytical model to describe the drain-induced barrier lowering (DIBL) effect has been obtained by solving the two-dimensional (2D) Poisson's equation for the dual-channel 4H-SiC MESFET (DCFET). Using this analytical model, we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET, which characterize the DIBL effect. The results show that they are significantly dependent on the drain bias, gate length as well as the thickness and doping concentration of the two channel layers. Based on this analytical model, the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance. 展开更多
关键词 drain-induced barrier lowering effect Poisson's equation metal semiconductor field effect transistor
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Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
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作者 张现军 杨银堂 +3 位作者 段宝兴 柴常春 宋坤 陈斌 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第3期395-399,共5页
A new analytical model to describe the drain-induced barrier lowering(DIBL) effect has been obtained by solving the two-dimensional(2D) Poisson’s equation for the dual-channel 4H-SiC MESFET(DCFET).Using this analytic... A new analytical model to describe the drain-induced barrier lowering(DIBL) effect has been obtained by solving the two-dimensional(2D) Poisson’s equation for the dual-channel 4H-SiC MESFET(DCFET).Using this analytical model,we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET,which characterize the DIBL effect.The results show that they are significantly dependent on the drain bias,gate length as well as the thickness and doping concentration of the two channel layers.Based on this analytical model,the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance. 展开更多
关键词 drain-induced barrier lowering effect Poisson’s equation metal semiconductor field effect transistor
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The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs 被引量:3
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作者 李劲 刘红侠 +2 位作者 李斌 曹磊 袁博 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第10期485-491,共7页
Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface chann... Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs. 展开更多
关键词 silicon-germanium-on-insulator MOSFETs strained Si short channel effects the draininduced barrier-lowering
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Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
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作者 李劲 刘红侠 +2 位作者 李斌 曹磊 袁博 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第8期78-83,共6页
For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator(DMG SSOI) MOSFETs is deve... For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator(DMG SSOI) MOSFETs is developed.We investigate the improved short channel effect(SCE),hot carrier effect(HCE),drain-induced barrier-lowering(DIBL) and carrier transport efficiency for the novel structure MOSFET.The analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe buffer.The surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and DIBL.Also,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly effective.Further, the threshold voltage model correctly predicts a"rollup"in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer.The validity of the two-dimensional analytical model is verified using numerical simulations. 展开更多
关键词 SOI MOSFETs STRAINED-SI dual-material gate short channel effect hot carrier effect the drain-induced barrier-lowering two-dimensional model
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A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs
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作者 李劲 刘红侠 +2 位作者 袁博 曹磊 李斌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第4期70-76,共7页
On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a thresho... On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs. 展开更多
关键词 dual material gate double-gate MOSFET STRAINED-SI short-channel effect the drain-induced barrier-lowering
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Simulation of electrical characteristics and structural optimization for small-scaled dual-gate GeOI MOSFET with high-k gate dielectric 被引量:2
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作者 白玉蓉 徐静平 +1 位作者 刘璐 范敏敏 《Journal of Semiconductors》 EI CAS CSCD 2014年第9期39-44,共6页
The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium (Ge) ch... The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium (Ge) channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect (SCE) and drain-induced barrier lowering (DIBL) effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and (5-9)×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved: on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV. 展开更多
关键词 GeOI MOSFET high-k gate dielectric short-channel effect drain-induced barrier lowering effect
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