Purpose-Under the high-speed operating conditions,the effects of wheelset elastic deformation on the wheel rail dynamic forces will become more notable compared to the low-speed condition.In order to meet different an...Purpose-Under the high-speed operating conditions,the effects of wheelset elastic deformation on the wheel rail dynamic forces will become more notable compared to the low-speed condition.In order to meet different analysis requirements and selecting appropriate models to analyzing the wheel rail interaction,it is crucial to understand the influence of wheelset flexibility on the wheel-rail dynamics under different speeds and track excitations condition.Design/methodology/approach-The wheel rail contact points solving method and vehicle dynamics equations considering wheelset flexibility in the trajectory body coordinate system were investigated in this paper.As for the wheel-rail contact forces,which is a particular force element in vehicle multibody system,a method for calculating the Jacobian matrix of the wheel-rail contact force is proposed to better couple the wheel-rail contact force calculation with the vehicle dynamics response calculation.Based on the flexible wheelset modeling approach in this paper,two vehicle dynamic models considering the wheelset as both elastic and rigid bodies are established,two kinds of track excitations,namely normal measured track irregularities and short-wave irregularities are used,wheel-rail geometric contact characteristic and wheel-rail contact forces in both time and frequency domains are compared with the two models in order to study the influence of flexible wheelset rotation effect on wheel rail contact force.Findings-Under normal track irregularity excitations,the amplitudes of vertical,longitudinal and lateral forces computed by the flexible wheelset model are smaller than those of the rigid wheelset model,and the virtual penetration and equivalent contact patch are also slightly smaller.For the flexible wheelset model,the wheel rail longitudinal and lateral creepages will also decrease.The higher the vehicle speed,the larger the differences in wheel-rail forces computed by the flexible and rigid wheelset model.Under track short-wave irregularity excitations,the vertical force amplitude computed by the flexible wheelset is also smaller than that of the rigid wheelset.However,unlike the excitation case of measured track irregularity,under short-wave excitations,for the speed within the range of 200 to 350 km/h,the difference in the amplitude of the vertical force between the flexible and rigid wheelset models gradually decreases as the speed increase.This is partly due to the contribution of wheelset's elastic vibration under short-wave excitations.For low-frequency wheel-rail force analysis problems at speeds of 350 km/h and above,as well as high-frequency wheel-rail interaction analysis problems under various speed conditions,the flexible wheelset model will give results agrees better with the reality.Originality/value-This study provides reference for the modeling method of the flexible wheelset and the coupling method of wheel-rail contact force to the vehicle multibody dynamics system.Furthermore,by comparative research,the influence of wheelset flexibility and rotation on wheel-rail dynamic behavior are obtained,which is useful to the application scope of rigid and flexible wheelset models.展开更多
This study aims to develop an analytical model based on the curve beam theory to capture the mechanical response of a multihelix cable considering the internal contact displacements.Accordingly,a double-helix cable su...This study aims to develop an analytical model based on the curve beam theory to capture the mechanical response of a multihelix cable considering the internal contact displacements.Accordingly,a double-helix cable subjected to axial tension and torsion is analyzed,and both the line and point contacts between the neighboring wires and strands are considered via an equivalent homogenized approach.Then,the proposed theoretical model is extended to a hierarchical multihelix cable with mutual contact displacements by constructing a recursive relationship between the high-and low-level multihelix structures.The global tensile stiffness and torsional stiffness of the double-helix cable are successfully evaluated.The results are validated by a finite element(FE)model,and are found to be consistent with the findings of previous studies.It is shown that the contact deformations in multihelix cables significantly affect their equivalent mechanical stiffness,and the contact displacements are remarkably enhanced as the helix angles increase.This study provides insights into the interwire/interstrand mutual contact effects on global and local responses.展开更多
Objective: To explore the pre-treatment and efficacy analysis of comprehensive anti-inflammatory treatment for lymphedema in patients with irritating contact dermatitis. Method: Convenience sampling method was used to...Objective: To explore the pre-treatment and efficacy analysis of comprehensive anti-inflammatory treatment for lymphedema in patients with irritating contact dermatitis. Method: Convenience sampling method was used to observe the skin of 160 patients with upper limb lymphedema admitted to the lymphedema outpatient department of our hospital. They were divided into an observation group (80 cases) and a control group (80 cases), and both groups received a course of comprehensive anti-inflammatory treatment (20 treatments). The control group received routine skin care;On the basis of the control group, the observation group received pre-treatment of the affected limb skin: Laofuzi herbal ointment was applied externally to the prone areas of irritating contact dermatitis (such as the upper arm, inner forearm, and cubital fossa). Result: The incidence of irritating contact dermatitis in the observation group was significantly lower than that in the control group (P 0.05). Patients in the observation group felt significantly better in terms of comfort, skin moisture, and itching relief after being wrapped with low elasticity bandages than those in the control group (P Conclusion: Preventive treatment can effectively reduce the incidence of irritating contact dermatitis, prolong the time of stress treatment, thereby increasing efficacy and improving patient compliance.展开更多
Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the i...Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.展开更多
A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and the...A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and then growing a thick silicide film,which can punch through the shallow junction and make a Schottky contact to the p-type silicon.Simulation results show that the anomalous subthreshold slope and kink effects are suppressed successfully and the drain breakdown voltage is improved considerably.This method has the same device area and is completely compatible with the bulk MOSFET process.展开更多
Mesh stiffness is one of important base parameters of face gear dynamic studies.However,a calculation solution of mesh stiffness of face gear drives is not to be constructed due to complex geometric flakes of face gea...Mesh stiffness is one of important base parameters of face gear dynamic studies.However,a calculation solution of mesh stiffness of face gear drives is not to be constructed due to complex geometric flakes of face gear teeth.Thus,a calculation solution of mesh stiffness of face gear drives with a spur gear,which is based on the proposed equivalent face gear teeth and Ishikawa model,is constructed,and the influence of contact effects on mesh stiffness of face gear drives is investigated.The results indicate the mesh stiffness of face gear drives is sensitive to contact effects under heavy loaded operating conditions,specially.These contributions will benefit to improve dynamic studies of face gear drives.展开更多
To discuss the soil arching effect on the load transferring model and sharing ratios by the piles and inter-pile subsoil in the bidirectionally reinforced composite ground, the forming mechanism, mechanical behavior a...To discuss the soil arching effect on the load transferring model and sharing ratios by the piles and inter-pile subsoil in the bidirectionally reinforced composite ground, the forming mechanism, mechanical behavior and its effect factors were discussed in detail. Then, the unified strength theory was introduced to set up the elastoplastic equilibrium differential equation of the subsoil under the limit equilibrium state. And from the equation, the solutions were derived with the corresponding formulas presented to calculate the earth pressure over and beneath the horizontal reinforced cushion or pillow, the stress of inter-pile subsoil and the pile-soil stress ratio. Based on the obtained solutions and measured data from an engineering project, the influence rules by the soil property parameters (i.e., the cohesion c and internal friction angle φ) and pile spacing on the pile-soil stress ratio n were discussed respectively. The results show that to improve the load sharing ratio by the piles, the more effective means for filling materials with a larger value of φ is to increase the ratio of pile cap size to spacing, while to reduce the pile spacing properly and increase the value of cohesion c is advisable for those filling materials with a smaller value of φ.展开更多
This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolit...This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.展开更多
A family of one-dimensional(1D) elliptic boundary-value problems with periodic and rapidly-oscillating piecewise-smooth coefficients is considered. The coefficients depend on the local or fast variables corresponding ...A family of one-dimensional(1D) elliptic boundary-value problems with periodic and rapidly-oscillating piecewise-smooth coefficients is considered. The coefficients depend on the local or fast variables corresponding to two different structural scales. A finite number of imperfect contact conditions are analyzed at each of the scales. The reiterated homogenization method(RHM) is used to construct a formal asymptotic solution. The homogenized problem, the local problems, and the corresponding effective coefficients are obtained. A variational formulation is derived to obtain an estimate to prove the proximity between the solutions of the original problem and the homogenized problem. Numerical computations are used to illustrate both the convergence of the solutions and the gain of the effective properties of a three-scale heterogeneous 1D laminate with respect to their two-scale counterparts. The theoretical and practical ideas exposed here could be used to mathematically model multidimensional problems involving multiscale composite materials with imperfect contact at the interfaces.展开更多
In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of(Li1-xFex)OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from int...In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of(Li1-xFex)OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from intrinsic superconducting properties,such as Andreev reflection,electron-boson coupling,multigap superconductivity,d-wave and p-wave pairing symmetry,they cannot be accounted for by the modified Blonder–Tinkham–Klapwijk(BTK) model,but require to consider critical current effects arising from the junction geometry.Our results point to the importance of tracking the evolution of the dips and peaks in the differential conductance as a function of the bias voltage,in order to correctly deduce the properties of the superconducting state.展开更多
We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB- MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopa...We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB- MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height (SBH) for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.展开更多
Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order ...Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□. The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 kΩ/□ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication. The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process anneMing on its electrical fabrication.展开更多
This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transis...This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.展开更多
We report properties of contact resistances observed on pentacene organic field-effect transistors(OFET) with four different source/drain electrodes, namely, copper(Cu), gold(Au), silver(Ag), and germanium(Ge). The me...We report properties of contact resistances observed on pentacene organic field-effect transistors(OFET) with four different source/drain electrodes, namely, copper(Cu), gold(Au), silver(Ag), and germanium(Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler–Nordheim tunneling, and electric field enhanced thermionic injection(Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.展开更多
基金China National Railway Group Science and Technology Program(N2022J009)China Academy of Railway Sciences Group Co.,Ltd.Program(2021YJ036).
文摘Purpose-Under the high-speed operating conditions,the effects of wheelset elastic deformation on the wheel rail dynamic forces will become more notable compared to the low-speed condition.In order to meet different analysis requirements and selecting appropriate models to analyzing the wheel rail interaction,it is crucial to understand the influence of wheelset flexibility on the wheel-rail dynamics under different speeds and track excitations condition.Design/methodology/approach-The wheel rail contact points solving method and vehicle dynamics equations considering wheelset flexibility in the trajectory body coordinate system were investigated in this paper.As for the wheel-rail contact forces,which is a particular force element in vehicle multibody system,a method for calculating the Jacobian matrix of the wheel-rail contact force is proposed to better couple the wheel-rail contact force calculation with the vehicle dynamics response calculation.Based on the flexible wheelset modeling approach in this paper,two vehicle dynamic models considering the wheelset as both elastic and rigid bodies are established,two kinds of track excitations,namely normal measured track irregularities and short-wave irregularities are used,wheel-rail geometric contact characteristic and wheel-rail contact forces in both time and frequency domains are compared with the two models in order to study the influence of flexible wheelset rotation effect on wheel rail contact force.Findings-Under normal track irregularity excitations,the amplitudes of vertical,longitudinal and lateral forces computed by the flexible wheelset model are smaller than those of the rigid wheelset model,and the virtual penetration and equivalent contact patch are also slightly smaller.For the flexible wheelset model,the wheel rail longitudinal and lateral creepages will also decrease.The higher the vehicle speed,the larger the differences in wheel-rail forces computed by the flexible and rigid wheelset model.Under track short-wave irregularity excitations,the vertical force amplitude computed by the flexible wheelset is also smaller than that of the rigid wheelset.However,unlike the excitation case of measured track irregularity,under short-wave excitations,for the speed within the range of 200 to 350 km/h,the difference in the amplitude of the vertical force between the flexible and rigid wheelset models gradually decreases as the speed increase.This is partly due to the contribution of wheelset's elastic vibration under short-wave excitations.For low-frequency wheel-rail force analysis problems at speeds of 350 km/h and above,as well as high-frequency wheel-rail interaction analysis problems under various speed conditions,the flexible wheelset model will give results agrees better with the reality.Originality/value-This study provides reference for the modeling method of the flexible wheelset and the coupling method of wheel-rail contact force to the vehicle multibody dynamics system.Furthermore,by comparative research,the influence of wheelset flexibility and rotation on wheel-rail dynamic behavior are obtained,which is useful to the application scope of rigid and flexible wheelset models.
基金Project supported by the National Natural Science Foundation of China(Nos.11932008 and 12102380)the Natural Science Foundation of Jiangsu Province of China(No.BK20180894)。
文摘This study aims to develop an analytical model based on the curve beam theory to capture the mechanical response of a multihelix cable considering the internal contact displacements.Accordingly,a double-helix cable subjected to axial tension and torsion is analyzed,and both the line and point contacts between the neighboring wires and strands are considered via an equivalent homogenized approach.Then,the proposed theoretical model is extended to a hierarchical multihelix cable with mutual contact displacements by constructing a recursive relationship between the high-and low-level multihelix structures.The global tensile stiffness and torsional stiffness of the double-helix cable are successfully evaluated.The results are validated by a finite element(FE)model,and are found to be consistent with the findings of previous studies.It is shown that the contact deformations in multihelix cables significantly affect their equivalent mechanical stiffness,and the contact displacements are remarkably enhanced as the helix angles increase.This study provides insights into the interwire/interstrand mutual contact effects on global and local responses.
文摘Objective: To explore the pre-treatment and efficacy analysis of comprehensive anti-inflammatory treatment for lymphedema in patients with irritating contact dermatitis. Method: Convenience sampling method was used to observe the skin of 160 patients with upper limb lymphedema admitted to the lymphedema outpatient department of our hospital. They were divided into an observation group (80 cases) and a control group (80 cases), and both groups received a course of comprehensive anti-inflammatory treatment (20 treatments). The control group received routine skin care;On the basis of the control group, the observation group received pre-treatment of the affected limb skin: Laofuzi herbal ointment was applied externally to the prone areas of irritating contact dermatitis (such as the upper arm, inner forearm, and cubital fossa). Result: The incidence of irritating contact dermatitis in the observation group was significantly lower than that in the control group (P 0.05). Patients in the observation group felt significantly better in terms of comfort, skin moisture, and itching relief after being wrapped with low elasticity bandages than those in the control group (P Conclusion: Preventive treatment can effectively reduce the incidence of irritating contact dermatitis, prolong the time of stress treatment, thereby increasing efficacy and improving patient compliance.
文摘Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.
文摘A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and then growing a thick silicide film,which can punch through the shallow junction and make a Schottky contact to the p-type silicon.Simulation results show that the anomalous subthreshold slope and kink effects are suppressed successfully and the drain breakdown voltage is improved considerably.This method has the same device area and is completely compatible with the bulk MOSFET process.
基金supported by the National Natural Science Foundations of China(Nos.51105194,51375226)the Fundamental Research Funds for the Central Universities(No.NS2015049)
文摘Mesh stiffness is one of important base parameters of face gear dynamic studies.However,a calculation solution of mesh stiffness of face gear drives is not to be constructed due to complex geometric flakes of face gear teeth.Thus,a calculation solution of mesh stiffness of face gear drives with a spur gear,which is based on the proposed equivalent face gear teeth and Ishikawa model,is constructed,and the influence of contact effects on mesh stiffness of face gear drives is investigated.The results indicate the mesh stiffness of face gear drives is sensitive to contact effects under heavy loaded operating conditions,specially.These contributions will benefit to improve dynamic studies of face gear drives.
基金Project (07JJ4015) supported by the Natural Science Foundation of Hunan Province, China
文摘To discuss the soil arching effect on the load transferring model and sharing ratios by the piles and inter-pile subsoil in the bidirectionally reinforced composite ground, the forming mechanism, mechanical behavior and its effect factors were discussed in detail. Then, the unified strength theory was introduced to set up the elastoplastic equilibrium differential equation of the subsoil under the limit equilibrium state. And from the equation, the solutions were derived with the corresponding formulas presented to calculate the earth pressure over and beneath the horizontal reinforced cushion or pillow, the stress of inter-pile subsoil and the pile-soil stress ratio. Based on the obtained solutions and measured data from an engineering project, the influence rules by the soil property parameters (i.e., the cohesion c and internal friction angle φ) and pile spacing on the pile-soil stress ratio n were discussed respectively. The results show that to improve the load sharing ratio by the piles, the more effective means for filling materials with a larger value of φ is to increase the ratio of pile cap size to spacing, while to reduce the pile spacing properly and increase the value of cohesion c is advisable for those filling materials with a smaller value of φ.
基金Project supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703)the National Natural Science Foundation of China (Grant Nos. 10974074,90607022,60676001,60676008,and 60825403)
文摘This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.
基金Project supported by the Desenvolvimento e Aplicaoes de Mtodos Matemticos de Homogeneizaao(CAPES)(No.88881.030424/2013-01)the Homogeneizao Reiterada Aplicada a Meios Dependentes de Múltiplas Escalas con Contato Imperfeito Entre as Fases(CNPq)(Nos.450892/2016-6and 303208/2014-7)the Caracterizacin de Propiedades Efectivas de Tejidos Biolgicos Sanos y Cancerosos(CONACYT)(No.2016–01–3212)
文摘A family of one-dimensional(1D) elliptic boundary-value problems with periodic and rapidly-oscillating piecewise-smooth coefficients is considered. The coefficients depend on the local or fast variables corresponding to two different structural scales. A finite number of imperfect contact conditions are analyzed at each of the scales. The reiterated homogenization method(RHM) is used to construct a formal asymptotic solution. The homogenized problem, the local problems, and the corresponding effective coefficients are obtained. A variational formulation is derived to obtain an estimate to prove the proximity between the solutions of the original problem and the homogenized problem. Numerical computations are used to illustrate both the convergence of the solutions and the gain of the effective properties of a three-scale heterogeneous 1D laminate with respect to their two-scale counterparts. The theoretical and practical ideas exposed here could be used to mathematically model multidimensional problems involving multiscale composite materials with imperfect contact at the interfaces.
基金Project supported by the National Key Basic Research Program of China(Grant Nos.2015CB921000,2016YFA0300301,and 2017YFA0302902)the National Natural Science Foundation of China(Grant Nos.11674374 and 1474338)+5 种基金the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH008)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB07020100 and XDB07030200)the Beijing Municipal Science and Technology Project(Grant No.Z161100002116011)the Fonds de la Recherche Scientifique–FNRS and the ARC Grant 13/18-08 for Concerted Research Actions,financed by the French Community of Belgium(Wallonia-Brussels Federation)Jérémy Brisbois acknowledges the support from F.R.S.–FNRS(Research Fellowship)The work of Alejandro V Silhanek is partially supported by PDR T.0106.16 of the F.R.S.–FNRS
文摘In this work,we discuss the origin of several anomalies present in the point-contact Andreev reflection spectra of(Li1-xFex)OHFeSe,LiTi2O4,and La2-xCexCuO4.While these features are similar to those stemming from intrinsic superconducting properties,such as Andreev reflection,electron-boson coupling,multigap superconductivity,d-wave and p-wave pairing symmetry,they cannot be accounted for by the modified Blonder–Tinkham–Klapwijk(BTK) model,but require to consider critical current effects arising from the junction geometry.Our results point to the importance of tracking the evolution of the dips and peaks in the differential conductance as a function of the bias voltage,in order to correctly deduce the properties of the superconducting state.
基金Supported by the National Natural Science Foundation of China under Grant No 61674161the Open Project of State Key Laboratory of Functional Materials for Informatics
文摘We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors (SB- MOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69mV/dec. Em- phasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance Cgs with respect to Vgs at various Vds, we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each Cgs peak, the difference between Vgs and Vds is equal to the Schottky barrier height (SBH) for NiSi2 on highly doped silicon, which indicates that the critical condition of channel pinching off is related with SBH for source/drain on chan- nel. The SBH for NiSi2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
文摘Development of graphene field effect transistors (GFETs) faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□. The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 kΩ/□ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication. The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process anneMing on its electrical fabrication.
基金supported by National Basic Research Program of China (973 Program) (Grant No 2006CB806204)National Natural Science Foundation of China (Grant Nos 60676001,60676008 and 60825403)
文摘This paper reports that the organic field-effect transistors with hybrid contact geometry were fabricated, in which the top electrodes and the bottom electrodes were combined in parallel resistances within one transistor. With the facility of the novel structure, the difference of contact resistance between the top contact geometry and the bottom contact geometry was studied. The hybrid contact devices showed similar characteristics with the top contact configuration devices, which provide helpful evidence on the lower contact resistance of the top contact configuration device. The origin of the different contact resistance between the top contact device and the bottom contact device was discussed.
基金Project supported by the Slovak Research and Development Agency(Grant Nos.APVV-17-0501 and APVV-17-0522)the Slovak Grant Agency for Science(Grants No.1/0776/15)
文摘We report properties of contact resistances observed on pentacene organic field-effect transistors(OFET) with four different source/drain electrodes, namely, copper(Cu), gold(Au), silver(Ag), and germanium(Ge). The metals were selected to provide a wide range of energy barriers for charge injection, from blocking contact to smooth injection. All OFETs exhibited strong voltage dependence of the contact resistance, even for devices with smooth injection, which is in strong disagreement with the definition of ohmic contacts. A comparison with current crowding, resistive network, Fowler–Nordheim tunneling, and electric field enhanced thermionic injection(Schottky emission) pointed to importance of local electric fields and/or electrostatic field charges.
文摘为考虑颗粒群碰撞过程中时间效应对非堆积型多颗粒阻尼器(non-packed particle damper, NPPD)减振性能的影响,在现有考虑惯容的等效单颗粒力学模型(equivalent inertia single-particle model, EISM)研究基础上,提出了基于接触单元法的等效单颗粒力学模型(equivalent inertia single-particle model based on contact element method, EISM-CE),并基于Runge-Kutta算法建立了NPPD单自由度结构运动状态求解算法。设计进行附加NPPD单层钢框架结构振动台试验,探究不同填充率对结构顶层位移频响曲线的影响规律,提出了EISM-CE参数取值原则,进而进行力学模型试验验证及模型对比分析。在模型验证合理性基础上,基于EISM-CE依次进行了自由振动、简谐激励及记录强震动下减振性能及能量变化规律分析。研究结果表明,与现有EISM相比,提出的基于接触单元法的EISM-CE模型及参数取值原则更加合理有效。减振性能数值分析结果表明,不同激励下NPPD均具有较好的减振性能;考虑碰撞时间效应后EISM-CE与EISM对应减振性能及机理分析结果存在一定的差异。