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Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2 被引量:1
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作者 Ji-Xiang Gong Jun Yang +8 位作者 Min Ge Yong-Jian Wang Dan-Dan Liang Lei Luo Xiu Yan Shi-Rui Weng Li Pi Chang-Jin Zhang Wen-Ka Zhu 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第9期57-61,共5页
Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight differen... Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2. 展开更多
关键词 Te MR Non-Stoichiometry Effects on the extreme Magnetoresistance in Weyl Semimetal WTe2
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