In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T D...In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.展开更多
根据锡盟±800 k V特高压换流站电气总平面布置设计要求,结合电气主接线、进出线条件和站区总体规划方案,考虑节约占地、布局紧凑合理、出线顺畅、与周围环境协调、减少拆迁赔偿、便于运行维护、控制楼朝向合理等方面,对交流500 k ...根据锡盟±800 k V特高压换流站电气总平面布置设计要求,结合电气主接线、进出线条件和站区总体规划方案,考虑节约占地、布局紧凑合理、出线顺畅、与周围环境协调、减少拆迁赔偿、便于运行维护、控制楼朝向合理等方面,对交流500 k V配电装置区域、交流滤波器区域、直流开关场区域、换流区域(阀厅、换流变压器及控制楼区域)、站前辅助功能区域的电气总平面布置进行了设计优化,确定最为合理的布置型式。展开更多
文摘In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
文摘根据锡盟±800 k V特高压换流站电气总平面布置设计要求,结合电气主接线、进出线条件和站区总体规划方案,考虑节约占地、布局紧凑合理、出线顺畅、与周围环境协调、减少拆迁赔偿、便于运行维护、控制楼朝向合理等方面,对交流500 k V配电装置区域、交流滤波器区域、直流开关场区域、换流区域(阀厅、换流变压器及控制楼区域)、站前辅助功能区域的电气总平面布置进行了设计优化,确定最为合理的布置型式。
