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Mossbauer effect and EPR spectroscopy study on GaP:Fe
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作者 曾贻伟 邱菊 +2 位作者 杨锡震 李智 林振金 《Chinese Science Bulletin》 SCIE EI CAS 1996年第10期867-872,共6页
As is known, GaP is a kind of semiconductors with a wide, indirect gap and is one ofthe dominant materials for fabrication of green luminescence emission diode. It is inevita-ble to form iron impurities in growing the... As is known, GaP is a kind of semiconductors with a wide, indirect gap and is one ofthe dominant materials for fabrication of green luminescence emission diode. It is inevita-ble to form iron impurities in growing the single crystal of GaP. This causes difficulties inimproving the efficiency of the luminesence devices. Undoubtedly, it is very important 展开更多
关键词 iron IMPLANTATION and diffusion GAP MOSSBAUER and EPR spectroscopy the population of multi-charge state of iron.
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