Thermal Defect Analysis on Transformer Using a RLC Network and Thermography

Electrical transformers are vital components found virtually in most power-operated equipments. These transformers spontaneously radiate heat in both operation and steady-state mode. Should this thermal radiation inherent in transformers rises above allowable threshold a reduction in efficiency of operation occurs. In addition, this could cause other components in the system to malfunction. The aim of this work is to detect the remote causes of this undesirable thermal rise in transformers such as oil distribution transformers and ways to control this prevailing thermal problem. Oil transformers consist of these components: windings usually made of copper or aluminum conductor, the core normally made of silicon steel, the heat radiators, and the dielectric materials such as transformer oil, cellulose insulators and other peripherals. The Resistor-Inductor-Capacitor Thermal Network (RLCTN) model at architectural level identifies with these components to have ensemble operational mode as oil transformer. The Inductor represents the windings, the Resistor representing the core and the Capacitor represents the dielectrics. Thermography of transformer under various loading conditions was analyzed base on Infrared thermal gradient. Mathematical, experimental, and simulation results gotten through RLCTN with respect to time and thermal image analysis proved that the capacitance of the dielectric is inversely proportional to the thermal rise.

Thermal transport properties of defective graphene:A molecular dynamics investigation

In this work the thermal transport properties of graphene nanoribbons with randomly distributed vacancy defects are investigated by the reverse non-equilibrium molecular dynamics method. We find that the thermal conductivity of the graphene nanoribbons decreases as the defect coverage increases and is saturated in a high defect ratio range. Further analysis reveals a strong mismatch in the phonon spectrum between the unsaturated carbon atoms in 2-fold coordination around the defects and the saturated carbon atoms in 3-fold coordination, which induces high interfacial thermal resistance in defective graphene and suppresses the thermal conductivity. The defects induce a complicated bonding transform from sp2 to hybrid sp--sp2 network and trigger vibration mode density redistribution, by which the phonon spectrum conversion and strong phonon scattering at defect sites are explained. These results shed new light on the understanding of the thermal transport behavior of graphene-based nanomaterials with new structural configurations and pave the way for future designs of thermal management phononic devices.

Effects of doping, Stone Wales and vacancy defects on thermal conductivity of single-wall carbon nanotubes

The thermal conductivity of carbon nanotubes with certain defects （doping, Stone-Wales, and vacancy） is investigated by using the non-equilibrium molecular dynamics method. The defective carbon nanotubes （CNTs） are compared with perfect tubes. The influences of type and concentration of the defect, length, diameter, and chirality of the tube, and the ambient temperature are taken into consideration. It is demonstrated that defects result in a dramatic reduction of thermal conductivity. Doping and Stone-Wales （SW） defects have greater effect on armchair tubes, while vacancy affects the zigzag ones more. Thermal conductivity of the nanotubes increases, reaches a peak, and then decreases with increasing temperature. The temperature at which the thermal conductivity peak occurs is dependent on the defect type. Different from SW or vacancy tubes, doped tubes are similar to the perfect ones with a sharp peak at the same temperature. Thermal conductivity goes up when the tube length grows or diameter declines. It seems that the length of thermal conductivity convergence for SW tubes is much shorter than perfect or vacancy ones. The SW or vacancy tubes are less sensitive to the diameter change, compared with perfect ones.

Influences of vacancy defects on thermal conductivities of Ge thin films

The effects of vacancy defects on the thermal conductivity of Ge thin films were investigated by employing molecular dynamics （MD） simula- tions and theoretical analysis based on the Boltzmann equation. Both the MD and theoretical results show that the lattice thermal conductivity dramatically decreases with the increasing of vacancy concentration at 400 and 500 K. In addition, the dependence of vacancy concentration on the thermal conductivity of Ge thin films becomes less sensitive as the temperature increases. Theoretical results also confirm that the major part of the lattice thermal conductivity reduction is associated with the point-defect scattering and phonon-phonon scattering processes.

Thermal conductivity of carbon nanotube superlattices:Comparative study with defective carbon nanotubes

We use molecular dynamics simulation to calculate the thermal conductivities of（5, 5） carbon nanotube superlattices（CNTSLs） and defective carbon nanotubes（DCNTs）, where CNTSLs and DCNTs have the same size. It is found that the thermal conductivity of DCNT is lower than that of CNTSL at the same concentration of Stone–Wales（SW） defects. We perform the analysis of heat current autocorrelation functions and observe the phonon coherent resonance in CNTSLs, but do not observe the same effect in DCNTs. The phonon vibrational eigen-mode analysis reveals that all modes of phonons are strongly localized by SW defects. The degree of localization of CNTSLs is lower than that of DCNTs, because the phonon coherent resonance results in the phonon tunneling effect in the longitudinal phonon mode. The results are helpful in understanding and tuning the thermal conductivity of carbon nanotubes by defect engineering.

Different Thermal Stabilities of Cation Point Defects in LaAlO_3 Bulk and Films

Using the first-principles method, we investigate the thermal stability of cation point defects in LaAlO3 bulk and films. The calculated densities of states indicate that cation vacancies and antisites act as acceptors. The formation energies show that cation vacancies are energetically favorable in bulk LaAIO3 under O-rich conditions, while the AILa antisites are stable in reducing atmosphere. However, the same behavior does not appear in the case of LaAlO3 films. For LaO-terminated LaAlOa fihns, La or AI vacancies remain energetically favorable under O-rich and O-deficient conditions. For an AlO2-terminated surface, under O-rich condition the La interstitial atom is repelled from the outmost layer after optimization, which releases more stress leading to the decrease of total energy of the system. An AI interstitial atom has a smaller radius so that it can stay in distorted films and becomes more stable under O-deficient conditions, and the Al interstitial atoms can be another possible carrier source contribution to the conductivity of n-type interface under an ultrahigh vacuum. La and Al antisites have similar formation energy regardless of oxygen pressure. The results would be helpful to understand the defect structures of LaAlOa-related materials.

Characterizing Property of States: Effect of Defects on the Coefficient of Thermal Expansion and the Specific Heat Capacity of ZrB₂

Thermal storage potential and thermal expansion are characteristic properties for extreme applications. ZrB2 is a candidate for advanced applications in aircraft and fusion reactors. This article presents density functional theory calculations of its states, microstructure and quasi-harmonic levels calculations of thermophysical properties. Band structure highlighted dynamical instability with metallic impurities in ZrB2 structure based on frequency modes. The observed projected density of states (PDOS) appropriate 4d orbital of Zr dominated at low frequency both in perfect crystal in the presence or absence of covalent impurities while B 2s and 2p orbitals dominate higher frequency states. Temperature dependency and anisotropy of coefficient of thermal expansion (CTE) were evaluated with various impurities. Various thermodynamic properties like entropy and free energy were explored for degrees of freedom resulting from internal energy changes in the material. Computed results for heat capacity and CTE were compared to available numerical and experimental data.

Study of Surface and Subsurface Defects in Materials by Photothermal Deflection Technique: Theory and Experience

Photothermal deflection is widely used to study defects in materials. Both high spatial resolution and high sensitivity are required to detect them. In order to improve the theoretical model in the case of uniform heating (one dimensional heat treatment) we have chosen to heat the sample by a halogen lamp. The sample which contains a known surface and subsurface defects is first covered by a thin graphite layer and placed in air. The sample fixed on a vertical holder is able to move in the x and y directions thanks a two stepper motors. The measurement showed excellent agreement between experimental and simulation results.

Thermally Agitated Self Assembled Carbon Nanotubes and the Scenario of Extrinsic Defects

Employing the arc discharge method we prepared carbon nanotubes, CNTs, in open air deionized water. Their morphology was studied varying the annealing temperature and characterizing by Raman Spectroscopy, Transmission Electron Microscopy (TEM), X-Ray Diffractogram (XRD) and Energy Dispersion X-Ray (EDX). According to the study, the CNTs are found self-assembled where the graphene sheets and/or defects are observed sort out themselves with enhancement of temperature.

Study of Defect and Large Thermal Strain Nature in Organic Crystal of Rubidium Hydrogen Phthalate

Imperfections in the(001) plate of rubidium hydrogen phthalate(RAP, RbC8H5O4) crystals have been studied by means of X-ray topography. The main defects are the grown-in dislocations, inclusions, growth layers and the thermal strain lobes caused by heat. The large thermal strain nature was determined by an Inclusion Probed Method (IPM), which is due to the gradient of the interplanar spacing formed by atomic displacement to <110> directions.

Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics

Thermal annealing effects on gamma irradiated Ni/4 H-SiC Schottky barrier diode(SBD) characteristics are analyzed over a wide range of temperatures(400–1100 °C). The annealing induced variations in the concentration of deep level traps in the SBDs are identified by thermally stimulated capacitance(TSCAP). A little decrease in the trap density at E_C – 0.63 eV and E_C –1.13 eV is observed up to the annealing temperature of 600 °C. Whereas, a gamma induced trap at E_C – 0.89 eV disappeared after annealing at 500 °C, revealing that its concentration(< 1013 cm-3) is reduced below the detection limit of the TSCAP technique.The electrical characteristics of irradiated SBDs are considerably changed at each annealing temperature. To understand the anomalous variations in the post-annealing characteristics, the interface state density distribution in the annealed SBDs is extracted.The electrical properties are improved at 400 °C due to the reduction in the interface trap density. However, from 500 °C, the electrical parameters are found to degrade with the annealing temperature because of the increase in the interface trap density.From the results, it is noted that the rectifying nature of the SBDs vanishes at or above 800 °C.

Lattice vibration and thermodynamical properties of a single-layer graphene in the presence of vacancy defects

The phonon density of states （PDOS） and the thermodynamical properties including the heat capacity, the free energy, and the entropy of a single-layer graphene with vacancy defects have been studied theoretically. We first analytically derive the general formula of the lattice vibration frequency, and then numerically discuss the effect of the defects on the PDOS. Our results suggest that the vacancy defects will induce the sawtooth-like oscillation of the PDOS and the specific oscillation patterns depend on the concentration and the spatial distribution of the vacancies. In addition, it is verified that the vacancy defects will cause the increase of the beat capacity because of the vacancy-induced low-frequency resonant peak. Moreover, the influences of the vacancies on the free energy and the entropy are investigated.

Weak absorption test and defect analysis of optical coatings

Surface thermal lensing technique was developed into a high-sensitive apparatus for weak absorption test and defect analysis of optical coatings. A continuous-wave 1 064 nm Nd:YAG laser and a He-Ne laser were employed as pump source and probe source, respectively. Low noise photoelectrical components and a lock-in amplifier were used for photo-thermal deformation signal detection. In order to improve sensitivity, the apparatus configuration was optimized by choosing appropriate parameters, including pump beam spot size, chopper frequency, detection distance, waist radius and position of probe beam. Coating samples were mounted on a x-y stage. Different procedures, such as single spot, linear scan and 2-dimension area scan, could be performed manually or automatically. Various optical coatings were prepared by both electron beam evaporation and ion beam sputtering deposition. High sensitivity was obtained and low to 1×10 -7 weak absorption was tested in low-loss coating samples. For the sensitivity extreme of the system, 1×10 -8 absorption was reason out to be measured by surface thermal lensing technique. Very small standard deviation was achieved for the reproducibility evaluation. Moreover, a spatial resolution of 25 micron was proved according to the area scan which traced out the profile of photo-thermal defects inside optical coatings. The system was employed in the analyses of optical absorption, absorption uniformity and defect characterization, and revealed the relationship between laser-induced damage and absorption of optical coatings.

Modeling and simulation of 3D thermal stresses of large-sized castings in solidification processes

When heavy machines and large scaled receiver system of communication equipment are manufactured, it always needs to produce large-sized steel castings, aluminum castings and etc. Some defects of hot cracking by thermal stress often appear during solidification process as these castings are produced, which results in failure of castings. Therefore predicting the effects of technological parameters for production of castings on the thermal stress during solidification process becomes an important means. In this paper, the mathematical models have been established and numerical calculation of temperature fields by using finite difference method (FDM) and then thermal stress fields by using finite element method (FEM) during solidification process of castings have been carried out. The technological parameters of production have been optimized by the results of calculation and the defects of hot cracking have been eliminated. Modeling and simulation of 3D thermal stress during solidification processes of large-sized castings provided a scientific basis, which promoted further development of advanced manufacturing technique.

Influence of Thermal Reduction Temperature on Hydrophilic of Graphene Oxide

The thermostability, structure, oxidized functional group and hydrophilic of the different reduction temperature of graphene oxide were investigated by TG-DTA, XRD, FTIR, Raman and Water contact angle analysis. There are three stages in the process. The first stage, under 150℃, desorption of adsorbed water on the graphene oxide, hydrophilic is best. The second stage, at 150–300℃, thermal decomposition of partial oxide functional group, graphene oxide was partly thermal reduction, hydrophilic diminishing. The third stage, at 300–550℃, temperature of 300–450℃ when oxidized functional group of graphene oxide is further decomposition, hydrophilic further reduced, temperature of 450–550℃, the carbon skeleton of graphene oxide decomposition. The thermal reduction process of graphene oxide only removed the oxidized functional group their structural deficiencies have not been restored, but due to thermal reduction process and build new structure defect.

基于红外热成像的围护结构热工性能定量检测方法研究进展

综述红外热成像技术在建筑围护结构热工性能定量检测领域的研究成果,介绍国内外定量红外热成像法的理论基础、发展历程以及在量化热工缺陷能量损失中的应用,从构建稳态热流环境、对流辐射换热计算、测试操作选择3个方面总结现场检测的影响因素,归纳图像处理技术在排除光学干扰、辨识热工缺陷、热工信息可视化等方面对红外检测领域的贡献,分析未来红外热成像的应用前景与发展方向。研究表明,红外热成像技术可成为围护结构热工性能定量检测与热工缺陷量化识别的优秀方法。

INFLUENCE OF DEFECTS ON PROPERTIES OF SPUTTERED CoCrAIY COATINGS

The influence of defects on the oxidation, hot corrosion and thermal shock properties of sputtered Co-30Cr-6Al-0.5Y coatings was investigated.The results indicated that the nodular defects reduced the properties of the coatings.For the oxidation,the nodular defects resulted in the severe internal oxidation of aluminium,as a result,the pure alu mina scale could not form at very high temperature such as at 1 100℃.For the hot corrosion,the nodular defects served as the short-path for the diffusion of sulfur into the coating and the substrate,and caused the sulfidation,of the specimen.Moreover,the nodular defects became the crack source during the thermal shock test and decreased the thermal shock resistance.

Role of Thermal Stresses in Degradation of High Power Laser Diodes

Catastrophic degradation of high power laser diodes is due to the generation of extended defects inside the active parts of the laser structure during the laser operation.The mechanism driving the degradation is strongly related to the existence of localized thermal stresses generated during the laser operation.These thermal stresses can overcome the yield strength of the materials forming the active part of the laser diode.Different factors contribute to reduce the laser power threshold for degradation.Among them the thermal transport across the laser structure constitutes a critical issue for the reliability of the device.

不同环境下外墙保温缺陷表征规律的数值模拟研究

以外墙保温缺失墙体为研究对象,基于数值模拟探究其在不同室内外温差和室外风速下的表征规律。选取标准中规定的缺陷区域相对面积及能耗增加比作为表征指标,同时提出温度异常区域相对面积及墙体能耗增加比作为新的表征指标,分别从墙体内、外表面对热工缺陷进行表征。通过分析缺陷墙体表面温度分布及传热量计算方法差异,探究各类型指标在不同环境下的表征结果差异产生原因。结果表明,由于现阶段标准中对缺陷区域划分及能耗增加比的简化计算,导致同一缺陷在不同环境下的表征结果出现明显波动,外表面缺陷区域相对面积和内表面缺陷区域能耗增加比波动幅度分别达到2.5%和6.6%,存在无法准确表征热工缺陷的问题。缺陷侧的温度异常区域相对面积及墙体能耗增加比在不同环境下的表征结果较为稳定,适宜作为热工缺陷的表征指标。