The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses. A special thermal modeling tool, CrysVUn...The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses. A special thermal modeling tool, CrysVUn, was used for numerical analysis of thermal elastic stresses and stress distribution of 300 mm Si crystal under the consideration of different thermal shields and gas flow conditions. The adopted governing partial equations for stress calculation are Cauchy′s first and second laws of motion. It is demonstrated that the presence and shape of thermal shield, the gas pressure and velocity can strongly affect von Mises stress distribution in Si crystal. With steep-wall shield, however, the maximal stress and ratio of high stress area are relatively low. With slope-wall shield or without shield, both maximal stress and ratio of high stress area are increased in evidence. Whether thermal shields are used or not, the increase of gas flow velocity could raise the stress level. In contrast, the increase of gas pressure cannot result in so significant effect. The influence of thermal shield and gas flow should be attributed to the modification of heat conduction and heat radiation by them.展开更多
基金The project was finanicallysupported bythe International Scientific and Technical Cooperation Major Planning Project(2005DFA5105).
文摘The thermal elastic stresses induced in 300 mm Si crystal may be great troubles because it can incur the generation of dislocations and undesirable excessive residual stresses. A special thermal modeling tool, CrysVUn, was used for numerical analysis of thermal elastic stresses and stress distribution of 300 mm Si crystal under the consideration of different thermal shields and gas flow conditions. The adopted governing partial equations for stress calculation are Cauchy′s first and second laws of motion. It is demonstrated that the presence and shape of thermal shield, the gas pressure and velocity can strongly affect von Mises stress distribution in Si crystal. With steep-wall shield, however, the maximal stress and ratio of high stress area are relatively low. With slope-wall shield or without shield, both maximal stress and ratio of high stress area are increased in evidence. Whether thermal shields are used or not, the increase of gas flow velocity could raise the stress level. In contrast, the increase of gas pressure cannot result in so significant effect. The influence of thermal shield and gas flow should be attributed to the modification of heat conduction and heat radiation by them.
