期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
Quantum fluctuations of mesoscopic damped double resonance RLC circuit with mutual capacitance-inductance coupling 被引量:12
1
作者 徐兴磊 李洪奇 王继锁 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第8期2462-2470,共9页
Based on the scheme of damped harmonic oscillator quantization and thermo-field dynamics (TFD), the quantization of mesoscopic damped double resonance RLC circuit with mutual capacitance-inductance coupling is propo... Based on the scheme of damped harmonic oscillator quantization and thermo-field dynamics (TFD), the quantization of mesoscopic damped double resonance RLC circuit with mutual capacitance-inductance coupling is proposed. The quantum fluctuations of charge and current of each loop in a squeezed vacuum state are studied in the thermal excitation case. It is shown that the fluctuations not only depend on circuit inherent parameters, but also rely on excitation quantum number and squeezing parameter. Moreover, due to the finite environmental temperature and damped resistance, the fluctuations increase with the temperature rising, and decay with time. 展开更多
关键词 mesoscopic double resonance RLC circuit linear transformation thermal excitation state quantum fluctuation
下载PDF
Self-screening of the polarized electric field in wurtzite gallium nitride along[0001]direction
2
作者 丘秋凌 杨世旭 +6 位作者 吴千树 黎城朗 张琦 张津玮 刘振兴 张源涛 刘扬 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第4期589-596,共8页
The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization superjunct... The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization superjunctions.However,the current researches on the polarization mechanism of GaN-based materials are not sufficient.In this paper,we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design(TCAD) simulation.The selfscreening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively.We believe that the formation of high-density two-dimensional electron gas(2 DEG) in GaN is the accumulation of screening charges.We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices. 展开更多
关键词 gallium nitride polarized electric field self-screening effect surface states donor doping intrinsic thermal excitation
下载PDF
Thermophysical properties of iridium at finite temperature
3
作者 Priyank Kumar N K Bhatt +1 位作者 P R Vyas V B Gohel 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期404-411,共8页
The bulk properties of materials in an extreme environment such as high temperature and high pressure can be understood by studying anharmonic effects due to the vibration of lattice ions and thermally excited electro... The bulk properties of materials in an extreme environment such as high temperature and high pressure can be understood by studying anharmonic effects due to the vibration of lattice ions and thermally excited electrons.In this spirit,in the present paper,anharmonic effects are studied by using the recently proposed mean-field potential(MFP) approach and Mermin functional which arise due to the vibration of lattice ions and thermally excited electrons,respectively.The MFP experienced by a wanderer atom in the presence of surrounding atoms is constructed in terms of cold energy using the local form of the pseudopotential.We have calculated the temperature variation of several thermophysical properties in an extreme environment up to melting temperature.The results of our calculations are in excellent agreement with the experimental findings as well as the theoretical results obtained by using first principle methods.We conclude that presently used conjunction scheme(MFP+pseudo potential) is simple computationally,transparent physically,and accurate in the sense that the results generated are comparable and sometimes better than the results obtained by first principle methods.Local pseudopotential used is transferable to extreme environment without adjusting its parameters. 展开更多
关键词 extreme experienced melting presently excited thermally sometimes understood comparable conclude
下载PDF
Influence of the quantum-confined Stark effect on the temperature-induced photoluminescence blueshift of In GaN/GaN quantum wells in laser diode structures 被引量:1
4
作者 曹文彧 胡晓东 《Chinese Optics Letters》 SCIE EI CAS CSCD 2016年第6期55-59,共5页
Measurements of the excitation power-dependence and temperature-dependence photoluminescence(PL) are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells(QWs) in laser diode structures. T... Measurements of the excitation power-dependence and temperature-dependence photoluminescence(PL) are performed to investigate the emission mechanisms of In Ga N/Ga N quantum wells(QWs) in laser diode structures. The PL spectral peak is blueshifted with increasing temperature over a certain temperature range. It is found that the blueshift range was larger when the PL excitation power is smaller. This particular behavior indicates that carriers are thermally activated from localized states and partially screen the piezoelectric field present in the QWs. The small blueshift range corresponds to a weak quantum-confined Stark effect(QCSE) and a relatively high internal quantum efficiency(IQE) of the QWs. 展开更多
关键词 confined Stark piezoelectric excitation thermally partially tempera fitting screening attributed
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部