Vertically Integrated Thermo-Optic Waveguide Switch Using Optical Polymers

We propose and fabricate a vertically integrated thermo-optic waveguide switch. It controls the optical path between two vertically stacked waveguides using the thermo-optic effect of optical polymer. The measured crosstalk is less than -10 dB.

A 1×4 Polymeric Digital Optical Switch Based on the Thermo-Optic Effect

We present a 1 × 4 Y-branch digital optical switch in which S-bend variable optical attenuators are integrated. The S-bend waveguides, which are always introduced to connect the switch and the standard fiber array, are made use of and designed as variable optical attenuators. A compact device with low crosstalk and larger branching-angle is obtained. The device is fabricated on the thermo-optic polymer materials,and the performance of the device is measured. With an applied driving power of less than 200mW, the device has a low crosstalk of less than - 35dB at a wavelength of 1.55 μm.

Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide

We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.

A New Type of Fiber-induced Optically Controllable Silicon-loaded Millimeter Waveguide Switch

In this paper,a new type of optically controllable silicon slab loaded E-plane millimeterwave rectangular waveguide switch is presented.It uses SELFOC lens to couple optical puls-es to silicon slab with optical fiber.The on/off ratio reaches 42dB,the front fringe of suchkind swith is less than 0.05μs,and the insertion loss is less than 1dB in the full band of 26.5GHz to 40GHz.

Temperature sensor based on polymer thin film optical waveguide

Based on attenuated total reflection （ATR） and thermo-optic effect, the polymeric thin film planar optical waveguide is used as the temperature sensor, and the factors influencing the sensitivity of the temperature sensor are comprehensively analyzed. Combined with theoretical analysis and experimental investigation, the sensitivity of the temperature sensor is related to the thicknesses of the upper cladding layer, the waveguide layer, the optical loss of the polymer material and the guided wave modes. The results show that the slope value about reflectivity and temperature, which stands for the sensitivity of the polymer thin film temperature sensor, is associated with the waveguide film thickness and the guided wave modes, and the slope value is the highest in the zero reflectance of a certain transverse electric （TE） mode. To improve the sensitivity of the temperature sensor, the sensor＇s working incident light exterior angle α should be chosen under a certain TE mode with the reflectivity to be zero. This temperature sensor is characterized by high sensitivity and simple structure and it is easily fabricated.

Novel wavelength-accurate InP-based arrayed waveguide grating

A 13-channel, InP-based arrayed waveguide grating （AWG） is designed and fabricated in which the on-chip loss of the central channel is about -5 dB and the crosstalk is less than -23 dB in the center of the spectrum response. However, the central wavelength and channel spacing are deviated from the design values. To improve their accuracy, an optimized design is adopted to compensate the process error. As a result, the central wavelength 1549.9 nm and channel spacing 1.59 nm are obtained in the experiment, while their design values are 1549.32 nm and 1.6 nm, respectively. The route capability and thermo-optic characteristic of the AWG are also discussed in detail.

Fast response 2×2 thermo-optic switch with polymer/silica hybrid waveguide

A polymer/silica hybrid 2×2 multimode-interference switch is designed and fabricated. Instead of polymer Mach-Zehnder interferometer thermo-optic （TO） silica is used as under-cladding to accelerate heat release because of its large thermal conductivity. The developed switch exhibits low power consumption of 6.2 mW, low crosstalk of about 28 dB, and short response time. The rise and fall times of 103 and 91 its for this hybrid switch are shortened by 40.8% and 52.4%, respectively, compared with those of the fabricated TO switch （174 and 191 μs） using polymer as both upper- and under-claddings.

基于3D打印技术的微波开关设计与实践

文章介绍了一种基于3D打印技术的R型波导开关的设计方法,并对影响微波开关性能指标的射频参数、切换时间进行了验证。验证结果表明,微波开关的射频指标无恶化,切换时间缩短,微波开关可靠性得到提升。通过3D打印技术的应用,减轻开关重量17%以上,生产周期缩短60%以上。文章论述了微波开关射频指标、切换时间的设计过程和验证结果,解决了X频段R型波导开关切换时间长和重量大的不足,为波导微波开关制造提供了一种新的途径。

Ultralow cross talk arrayed waveguide grating integrated with tunable microring filter array

The silicon-based arrayed waveguide grating(AWG)is widely used due to its compact footprint and its compatibility with the mature CMOS process.However,except for AWGs with ridged waveguides of a few micrometers of cross section,any small process error will cause a large phase deviation in other AWGs,resulting in an increasing cross talk.In this paper,an ultralow cross talk AWG via a tunable microring resonator(MRR)filter is demonstrated on the SOI platform.The measured insertion loss and minimum adjacent cross talk of the designed AWG are approximately 3.2 and-45.1 d B,respectively.Compared with conventional AWG,its cross talk is greatly reduced.

基于光导开关的光电集成一体化装配技术研究

随着微电子技术的发展,光导开关是一种新型的快速电子器件,在高功率脉冲、超快光电控制等领域有广泛的应用。作为一种复杂的光电混合器件,在高电压高功率应用场景下,需要同时满足微波输出、光学对位、耐高压等要求。在一体化装配过程中,碳化硅光导开关存在碳化硅晶片易碎、输入激光易损耗等问题,因此,该文从光波导装配设计、一体化装配设计和一体化装焊仿真3个方面进行研究,通过柔性装配实现耐高压光导开关封装。

大功率光电器件光波导键合技术研究

光导开关是一种新型半导体光电子器件,在光通讯、雷达、微波等领域广泛应用,但在高工作电压的条件下会发生表面击穿等问题,因此需要对其进行封装提高侧面的耐压性能。该文选用光波导的方式对碳化硅晶片进行封装,通过玻璃浆料烧结键合、真空热压键合和光波导胶键合3种方法对小面积的侧面异质键合进行研究。通过3种方法的工艺优化及键合质量性能测试,光波导胶键合方法对激光功率的损耗最小,实现器件耐压值提升至10 kV。

面向撞击载荷的疲劳寿命分析及验证

针对宇航用波导开关在反复切换撞击工况下的寿命指标要求,开展疲劳寿命设计与验证。在实际工况应力谱难以获得的情况下,基于数值计算方法,采用两种不同方法获取应力谱后开展疲劳寿命分析并进行了试验验证,验证结果表明:基于瞬态动力学的疲劳分析有较高的准确性,在此基础上,优化改进产品结构,使产品切换寿命满足指标要求。

二氧化硅平面波导集成光开关器件研究

基于二氧化硅平面光波导平台,设计并制作了一种多模干涉马赫曾德型的低功耗热光开关。该器件结合了多模干涉耦合器的稳定性及二氧化硅波导和热光开关的低损耗等优势。经仿真,对器件参数进行了优化,并讨论了金属层与波导的间距对传输光强及功耗的影响。测试结果表明,该器件的结构稳定,偏振依赖小,插入损耗低于2 dB,能实现开关的转换,功耗为450 mW左右,开关响应时间为103µs和113µs,在1564 nm工作波长下消光比超过16 dB,尺寸为2.30 cm×0.25 mm。该器件不仅与互补金属氧化物半导体工艺相兼容,同时与光纤之间也有较好的兼容性。二氧化硅波导光开关器件具有成本低,产量大,性能稳定的优势,能给光通信及光计算的未来发展提供可靠的基础。

Optimized design and fabrication of nanosecond response electro optic switch based on ultraviolet-curable polymers

A nanosecond response waveguide electro-optic （EO） switch based on ultraviolet （UV） sensitive polymers of Norland optical adhesive （NOA73） and Dispersed Red 1 （DR1） doped SU-8 （DR1/SU-8） is designed and fabricated. The absorption properties, refractive indexes, and surface morphologies of NOA73 film are characterized. The single-mode transmission condition is computed by the effective index method, and the percentage of optical field distributed in EO layer is optimized to be 93.78 %. By means of spin-coating, thermal evaporation, photolithography, and inductively coupled plasma etching, a Mach-Zehnder inverted-rib waveguide EO switch with micro-strip line electrode is fabricated on a silicon substrate. Scanning electron microscope characterization proves the physic-chemical compatibility between NOA73 cladding and DR1/SU-8 core material. The optical transmission loss of the fabricated switch is measured to be 2.5 dB/cm. The rise time and fall time of switching are 3.199 ns and 2.559 ns, respectively. These results indicate that the inverted-rib wave- guide based on UV-curable polymers can effectively reduce the optical transmission loss and improve the time response performance of an EO switch.

Compact 2×2 parabolic multimode interference thermo–optic switches based on fluorinated photopolymer

In this work, a dual-side parabolic structural(DSPS) multimode interference(MMI) thermo–optic(TO) waveguide switch is designed and fabricated by using novel low-loss fluorinated photopolymer materials. Comparing with the traditional dual-side linear structural(DSLS) MMI device, the effective length of the MMI coupling region proposed can be effectively reduced by 40%. The thermal stability of the waveguide material is analyzed, and the optical characteristics of the switching chip are simulated. The actual performances of the entire MMI switch are measured with an insertion loss of7 dB, switching power of 15 m W and an extinction ratio of 28 dB. In contrast to the traditional MMI optical switch, the new type of parabolic structural MMI TO waveguide switch exhibits lower power consumption and larger extinction ratio. The compact fluorinated polymer MMI TO switches are suitable well for realizing miniaturization, high-properties, and lower cost of photonic integrated circuits.

Modeling of terahertz pulse generation from LT-GaAs ultrafast photoconductive switches

The technique of terahertz pulses generated from the photoconductive switches has been applied in the ultrafast electrical pulse metrology recently.A lumped-element theoretical model is established to describe the performance of the LT-GaAs ultrafast photoconductive switch used in the ultrafast pulse standard.The carrier transport processes of the photoexcited semiconductor,the attenuation and dispersion during terahertz pulse propagating are considered in the theoretical model.According to the experimental parameters,the waveforms of the generated terahertz pulses are calculated under optical excitations with different wavelengths of 840 nm and 450 nm,respectively.And comparisons between the theoretical results and the experimental results are carried out.

Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

The thermo-optic effect in the lateral-carrier-injection pin junction SOI ridge waveguide is analyzed according to the thermal field equation.Numerical analysis and experimental results show that the thermo-optic effect caused by carrier injection is significant in such devices,especially for small structure ones.For a device with a 1000μm modulation length,the refractive index rise introduced by heat accounts for 1/8 of the total effect under normal working conditions.A proposal of adjusting the electrode position to cool the devices to diminish the thermal-optic effect is put forward.

Research Progress on Multimode Interference Switches

Optical switches are key components for constructing optical communication networks, so it is necessary to design optical switches and optical switch arrays with high performance and low cost. As one type of optical switches, the multimode interference（MMl） switches have received considerable attention due to their unique merits. The structures and operation principles of various types of MMI switches are introduced, and the recent progresses of MMI switches are also discussed.

All-optical switch and transistor based on coherent light-controlled single two-level atom coupling with two nanowires

Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fineness microcavity,a new proposal is put forward which contains a single two-level atom asymmetrically coupled with two nanowires. Singleemitter manipulation of photonic signals for bilateral coherent incident is clear now, since we specify atomic saturation nonlinearity into three contributions which brings us a new approach to realizing light-controlled-light at weak light and single-atom levels. An efficient optically controllable switch based on self-matching-induced-block and a concise optical transistor are proposed. Our findings show potential applications in full-optical devices.

基于MZI结构的二氧化硅波导模式选择开关

设计并且制备了一种基于马赫-曾德尔干涉仪结构的二氧化硅波导模式选择开关。该器件由不对称定向耦合器及金属电极组成。通过金属电极产生的热场改变单模波导中的模式相位,实现了单模波导中E00模式向多模波导中E10模式的转换。器件采用标准CMOS工艺制备,在调制臂两侧引入空气槽,提高热场调制效率,降低开关功耗。实验结果表明,当输入E00模式时,输出端的串扰小于−17.13 dB,消光比大于16.7 dB;当输入E10模式时,输出端的串扰小于−19.84 dB,消光比大于22.5 dB。模式开关的上升时间和下降时间分别为0.7 ms和1 ms。该模式选择开关在模分复用系统中具有良好的应用前景。