In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaS...In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GalnAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single- and dual-junction TPV cells, including I-V characteristic, maximum output power （Pmax）, open-circuit voltage （Voc）, short-circuit current （/~sc）, etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GalnAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No.61076010)the Project of State Key Laboratory on Integrated Optoelectronics (Grant No.IOSKL2012ZZ13)
文摘In this paper, numerical analysis of GaSb （Eg = 0.72 eV）/Gao.84Ino.16Aso.14Sbo.86 （Eg = 0.53 eV） tandem thermopho- tovoltaic （TPV） cells is carried out by using Silvaco/Atlas software. In the tandem cells, a GaSb p-n homojunction is used for the top cell and a GalnAsSb p-n homojunction for the bottom cell. A heavily doped GaSb tunnel junction connects the two sub-cells together. The simulations are carried out at a radiator temperature of 2000 K and a cell temperature of 300 K. The radiation photons are injected from the top of the tandem cells. Key properties of the single- and dual-junction TPV cells, including I-V characteristic, maximum output power （Pmax）, open-circuit voltage （Voc）, short-circuit current （/~sc）, etc. are presented. The effects of the sub-cell thickness and carrier concentration on the key properties of tandem cells are investigated. A comparison of the dual-TPV cells with GaSb and GalnAsSb single junction cells shows that the Pmax of tandem cells is almost twice as great as that of the single-junction cells.
