InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the ...InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.展开更多
基金financially supported by the National Natural Science Foundation of China (No. 60777022)the Fundamental Research Funds for the Central Universities
文摘InAs0.052Sb0.948 epilayers with cutoff wavelengths longer than 8 μm were successfully grown on InAs substrates using melt epitaxy （ME）. Scanning electron microscopy observations show that the interface between the epilayers and substrates is flat, indicating the good quality of the epilayers, and the thickness of the epilayers is 40 μm. Photoconductors were fabricated using InAs0.052Sb0.948 thick epilayers grown by ME. Ge optical lenses were set on the photoconductors. At room temperature, the photoresponse wavelength range was 2-10μm. The peak detectivity Dλp reached 5.4 × 10^9 cm-Hz^1/2.W^-1 for the immersed detectors. The detectivity D^＊ was 9.3 × 10^8 and 1.3 × 10^8 cm.Hz^1/2.W^-1 at the wavelength of 8 and 9 μm, respectively. The good performance of the uncooled InAsSb detectors was experimentally validated.
