Interaction of RuO₂and Lead-Silicate Glass in Thick-Film Resistors

Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.

Three Dimensional Electric Circuits with Multiple Capacitors and Resistors

Two cubical 3D electric circuits with single and double capacitors and twelve ohmic resistors are considered. The resistors are the sides of the cube. The circuit is fed with a single internal emf. The charge on the capacitor(s) and the current distributions of all twelve sides of the circuit(s) vs. time are evaluated. The analysis requires solving twelve differential-algebraic intertwined symbolic equations. This is accomplished by applying a Computer Algebra System (CAS), specifically Mathematica. The needed codes are included. For a set of values assigned to the elements, the numeric results are depicted.

Analysis of Quenching Resistor Effect to Improve Stability of TIA Circuit for APD-A Secondary Publication

In this paper,since the Avalanche Photo Diode(APD)for Light-to-Voltage LTV conversion uses a high voltage in the operating range unlike other Photo Diodes(PD),the quenching resistor must be connected in series to prevent overcurrent when using the Transimpedance Amplifier(TIA).In such a case,quenching resistance may affect the transfer function of the TIA circuit,resulting in serious stability.Therefore,in this paper,by analyzing the effect of APD quenching resistance on the voltage and current loop transfer function of TIA,we proposed a loop analysis and a method for determining the quenching resistance value to improve stability.A TIA circuit with quenching resistance was designed by the proposed method and its operational stability was verified through simulation and chip fabrication.

A wideband metamaterial absorber based on a magnetic resonator loaded with lumped resistors

A wideband metamaterial absorber （MA） based on a magnetic resonator loaded with lumped resistors is presented. It is composed of a one-dimensional periodic array of double U-shaped structured magnetic resonators loaded with lumped resistors, a dielectric substrate, and a metal plate. We simulated, fabricated, measured, and analyzed the MA. The experimental results show that the reflectance （S11） is below -10 dB at normal incidence in the frequency range of 7.7 GHz 18 GHz, and the peak value is about -20 dB. Simulated power loss density distributions indicate that wideband absorption of the MA is mainly attributable to the lumped resistors in the magnetic resonator. Further investigations indicate that the distance between two unit cells along the magnetic field direction significantly influences the performance of the MA.

Failure Behaviors and Mechanisms of High-Ohmic Resistors Protected by PF/EP Paint in Heat and Humid Environment

Phenolic formaldehyde(PF)and epoxy(EP)resins are commonly used in electronic packaging. In this paper, high-ohmic resistors(2.2 M?, ±0.5%,)with Cr-Si film were coated by PF/EP paint, and the resulting coated resistors were used for heat and humid(HH)experiments. The experimental results show that the corrosion of bandlike resistive films is selective and isotropic, and that the corrosion spots in resistive films all form along grooves and extend in the same direction. It is revealed that OH^- ions are generated due to the electrochemical reactions of resistive film in HH experiments, so a NaOH aqueous solution with pH about 10 was used to study the effects of absorbed water and OH^- ions on PF/EP polymer film. The results indicates that the color of some part on PF/EP polymer film changes due to corrosion, and that the corrosion part of the polymer film is easy to be peeled off. It can be inferred that OH^- ions generated in HH experiments may play a catalytic role in the chemical reactions between polymer film and the absorbed water, which accelerates the degradation of PF/EP protection film for a resistor.

Preparation of Lead-free Thick-film Resistor Pastes

The preparation of lead-free thick-film resistors are reported:using RuO 2 and ruthenates as conductive particles,glass powders composed of B 2 O 3,SiO 2,CaO and Al2 O 3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al 2 O 3 substrates,and then sintering in a belt furnace.X-ray diffraction(XRD) and electron scanning microscopy(SEM) have been used to characterize the conductive particles.The resistors exhibit good refiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80Ω/□ to 600Ω/□.The resistors prepared are qualified for common use.

Negative-Resistance Characteristics Analysis of Poly-Silicon Resistors Formed on the Flow Sensor

In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.

Fabrication of integrated resistors in printed circuit boards

In order to utilize integrated passive technology in printed circuit boards (PCBs),manufacturing processing for integrated resistors by lamination method was investigated.Integrated resistors fabricated from Ohmega technologies in the experiment were 1 408 pieces per panel with four different patterns A,B,C and D and four resistance values of 25,50,75 and 100 Ω.Six panel per batch and four batches were performed totally.The testing was done for 960 pieces of integrated resistors randomly selected with the same size.The value distribution ranges and the relative standard deviation (RSD) show that the scatter degree of the resistance decreases with the resistor size increasing and/or with the resistance increasing.Patterns D with resistance of 75 and 100 Ω for four patterns have the resistance value variances less than 10%.Patterns C and D with resistance of 100 Ω have the manufacturing tolerance less than 10%.The process capabilities are from about 0.6 to 1.6 for the designed testing patterns,which shows that the integrated resistors fabricated have the potential to be used in multilayer PCBs in the future.

Thin Film Chip Resistors with High Resistance and Low Temperature Coefficient of Resistance

High resistance thin film chip resistors(0603 type) were studied,and the specifications are as follows:1 k? with tolerance about ±0.1% after laser trimming and temperature coefficient of resistance(TCR) less than ±15×10-6/℃.Cr-Si-Ta-Al films were prepared with Ar flow rate and sputtering power fixed at 20 standard-state cubic centimeter per minute(sccm) and 100 W,respectively.The experiment shows that the electrical properties of Cr-SiTa-Al deposition films can meet the specification requirements of 0603 type thin film chip resistors when the deposition time was about 11 min and deposition films were annealed at 500 ℃ for 120 min.The morphologies of Cr-Si-TaAl film surfaces were examined by scanning electron microscopy(SEM).The analysis suggests that Ta and Al may be distributed in CrSi2 film with mixed form of several structures(e.g.,bridge-like,capillary-like or island-like structures),and such a structure distribution is responsible for high film resistance and low TCR of Cr-Si-Ta-Al film.

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)

The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.

3D_Multi Resistor Electric Circuit

This report addresses the issues concerning the analysis of an electric circuit composed of multiple resistors configured in a 3-Dimension structure. Noting, all the standard textbooks of physics and engineering irrespective of the used components are circuits assembled in two dimensions. Here, by deviating from the “norm” we consider a case where the resistors are arranged in a 3D structure;e.g., a cube. Although, independent of the dimension of the design the same physics principles apply, transitioning from a 2D to a 3D makes the corresponding analysis considerably challenging. In general, with no exception, depending on the used components the analysis faces with solving a set of either algebraic or differential-algebraic equations. Practically, this interfaces with a Computer Algebra System (CAS). The main objective is symbolically to identify the current distributions and the equivalent resistor (s) of cubically assembled resistors.

Energy model based sensorless estimation method for operational temperature of braking resistor onboard metro vehicles

Purpose–This study aims to improve the availability of regenerative braking for urban metro vehicles by introducing a sensorless operational temperature estimation method for the braking resistor(BR)onboard the vehicle,which overcomes the vulnerability of having conventional temperature sensor.Design/methodology/approach–In this study,the energy model based sensorless estimation method is developed.By analyzing the structure and the convection dissipation process of the BR onboard the vehicle,the energy-based operational temperature model of the BR and its cooling domain is established.By adopting Newton’s law of cooling and the law of conservation of energy,the energy and temperature dynamic of the BR can be stated.To minimize the use of all kinds of sensors(including both thermal and electrical),a novel regenerative braking power calculation method is proposed,which involves only the voltage of DC traction network and the duty cycle of the chopping circuit;both of them are available for the traction control unit(TCU)of the vehicle.By utilizing a real-time iterative calculation and updating the parameter of the energy model,the operational temperature of the BR can be obtained and monitored in a sensorless manner.Findings–In this study,a sensorless estimation/monitoring method of the operational temperature of BR is proposed.The results show that it is possible to utilize the existing electrical sensors that is mandatory for the traction unit’s operation to estimate the operational temperature of BR,instead of adding dedicated thermal sensors.The results also validate the effectiveness of the proposal is acceptable for the engineering practical.Originality/value–The proposal of this study provides novel concepts for the sensorless operational temperature monitoring of BR onboard rolling stocks.The proposed method only involves quasi-global electrical variable and the internal control signal within the TCU.

计及杂散参数的柔性直流启动电阻冲击电压分布特性研究

针对柔性直流输电系统中启动电阻异常放电问题。首先,从启动电阻温升、绝缘水平、电流应力及冲击能量几方面进行校核分析;然后,对现场启动电阻进行拆解,定量分析启动电阻放电原因;最后,利用Ansys搭建电阻器杂散电容求解模型,根据分布电容求解结果,基于PSCAD搭建电阻塔的宽频等效模型,仿真分析启动电阻在冲击电压下的电位分布规律,验证启动电阻异常放电机理并提出优化改进措施。研究结果可为今后柔性直流输电系统启动电阻的选型设计提供参考。

基于MMC的分布式储能系统及其快速SOC均衡控制策略

提高基于模块化多电平换流器(modular multilevel converter,MMC)的分布式储能系统(distributed energy storage systems,DESS)的能量利用率,解决储能子模块(energy sub-module,ESM)荷电状态(state of charge,SOC)均衡问题至关重要。针对现有的SOC均衡控制策略的不足,提出内外分层的快速SOC均衡控制策略。外层针对桥臂间或相间的SOC差异,通过改进MMC模型预测控制(model predictive predictive control,MPC),配合自适应均衡系数,快速调整功率差额。内层引入自适应虚拟电阻法,根据ESM的SOC情况确定主导ESM,自适应调节各单元的虚拟电阻,产生相应的电压梯度,结合MMC排序算法使ESM按照各自SOC进行功率分配,从而实现ESM的SOC快速均衡,提高DESS能量利用率。通过在Matlab/Simulink构建仿真模型,证明了所提控制策略的有效性和可行性。

一种新型可移动TEM喇叭辐射波模拟器的模拟优化

为改善基于TEM喇叭的辐射波模拟器的低频辐射特性从而展宽其辐射近场半高宽,首次提出了在指数型TEM喇叭上/下两个极板的端口加上2个金属直板、并通过倾斜金属板和并联电阻相连的新型可移动模拟器的设计方案。基于FDTD方法模拟分析了该新型模拟器的特性参数对其近场辐射性能的影响,并给出了优化后的模拟器及其阵列的辐射特性。计算结果表明:尺寸为6 m×6 m×6.24 m的优化后的新型模拟器在距离口面3 m的中心位置的辐射近场脉宽能达到18.95 ns,而达到相同低频辐射性能的常规模拟器尺寸为9 m×12 m×6.8 m。且与常规模拟器相比,优化后的模拟器的场峰值更大。与前人的研究相比,优化后的模拟器场在保持高峰值的同时,时域波形后延震荡的幅度与主峰的比值明显减小。优化后的模拟器2×2阵列模型的测试平面中心点场峰值最大,且在测试平面上满足6 dB均匀性要求的有效测试区最大;有效测试区在横向上范围最大的是2×2阵列模型,其次是2×1阵列模型;在纵向上范围最大的是2×2阵列模型及1×2阵列模型。

某电源模块厚膜电阻硫化机理及防护对策

针对本单位某型电子产品内主板的电源模块上的厚膜电阻首次出现硫化的问题,开展了行业现状调研,研究了厚膜电阻硫化机理,分析了电源模块上厚膜电阻硫化的原因。从器件选型、设计优化、工艺改进三个方面提出了提升电源模块抗硫化能力的防护措施。重点论述了涂覆三防漆的改善措施,且经工艺验证可行,能够起到提升电源模块防硫化能力的作用。

基于运放的受控源实现方法

探讨四种受控源模型的实现方法及其应用,并利用Multisim软件验证电路实现结果的正确性。首先利用运放同相放大器实现电压控制电压源,在此基础上给出了负电阻实现电路设计的一种解释方法。利用电压控制电压源和负电阻实现电路,通过电路的等效变换给出了其他三种受控源的实现电路。所讨论的方法为实现一般二端口电路提供了一种设计思路。

一种基于PIN二极管的可切换吸透一体超材料设计

设计并验证了一种基于集总电阻和PIN二极管的可切换吸透一体超材料结构,以实现宽带透波和通带可开关特性。该超材料单元结构由连接集总电阻的交指谐振器、带通频率选择表面层以及加载PIN二极管的开关控制层组成。通过等效电路理论对单元结构与谐振频率之间的关系进行了分析。通过对单元结构的表面电流和电场分布的分析,揭示了其吸波机理。研究结果表明:当PIN二极管处于导通状态时,设计的结构在9.48~10.31GHz透波频段内插入损耗低于1d B,在5.34~8.08GHz和11.89~15.14GHz频段内具有90%以上的吸波率,并且在5.21~15.37GHz频带内整体反射系数低于-10d B,展现出良好的宽频隐身效果;而当PIN二极管处于截止状态时,原本的通带变为全反射带,反射系数大于-1d B。这一设计在隐身领域具有潜在应用价值。

基于FSR嵌入的智能泡沫在气动夹爪的应用

如何控制工业夹爪对易损物体的夹持力是一件具有挑战的任务,通常是利用有着力传感器的电动夹爪进行反馈控制,但这种方法昂贵且额外增加了夹爪的复杂程度。基于直书写3D打印,设计了一种内嵌力敏电阻器(FSR)的智能硅橡胶泡沫,安装在气动夹爪的指尖,不仅能监测夹持状态,还能在气压超过阈值后一定范围内,保持夹持力的恒定,以保护物体。实验结果表明:智能泡沫在4~12 N的工作范围内,误差不超过1.5N。当气压在450~560kPa范围内,能维持夹持力约14.6N。