Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of swit...Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.展开更多
A method combining computationalfluid dynamics(CFD)and an analytical approach is proposed to develop a prediction model for the variable thickness of the spray-induced liquidfilm along the surface of a cylindrical workp...A method combining computationalfluid dynamics(CFD)and an analytical approach is proposed to develop a prediction model for the variable thickness of the spray-induced liquidfilm along the surface of a cylindrical workpiece.The numerical method relies on an Eulerian-Eulerian technique.Different cylinder diameters and positions and inclinations of the spray gun are considered and useful correlations for the thickness of the liquidfilm and its distribution are determined using various datafitting algorithms.Finally,the reliability of the pro-posed method is verified by means of experimental tests where the robot posture is changed.The provided cor-relation are intended to support the optimization of spray-based coating applications.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 51202196the National Aerospace Science Foundation of China under Grant No 2013ZF53067+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China under Grant No 2014JQ6204the Fundamental Research Funds for the Central Universities under Grant No 3102014JCQ01032the 111 Project under Grant No B08040
文摘Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.
基金This work was supported in part by the National Natural Science Foundation of China(51405418)in part by the Major Program of Natural Science Foundation of Colleges and Universities in Jiangsu Province(18KJA460009)+2 种基金in part by the Jiangsu“Qing Lan Project”Talent Project(2021)Major Projects of Natural Science Research in Jiangsu Higher Education Institutions(Grant No.21KJA460009)General Program of Jiangsu University Natural Science Foundation(22KJD460009).
文摘A method combining computationalfluid dynamics(CFD)and an analytical approach is proposed to develop a prediction model for the variable thickness of the spray-induced liquidfilm along the surface of a cylindrical workpiece.The numerical method relies on an Eulerian-Eulerian technique.Different cylinder diameters and positions and inclinations of the spray gun are considered and useful correlations for the thickness of the liquidfilm and its distribution are determined using various datafitting algorithms.Finally,the reliability of the pro-posed method is verified by means of experimental tests where the robot posture is changed.The provided cor-relation are intended to support the optimization of spray-based coating applications.
