Properties of symmetrical layers as matching layers in multilayer thin film design were analyzed. A calculation method was presented to derive parameters of desired equivalent refractive index. A harmonic beam splitte...Properties of symmetrical layers as matching layers in multilayer thin film design were analyzed. A calculation method was presented to derive parameters of desired equivalent refractive index. A harmonic beam splitter was designed and fabricated to test this matching method. OCIS codes： 230.1360, 220.0220, 310.6860.展开更多
A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of dis...A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.展开更多
Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integr...Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integration compared with conventional bulk lithium niobate modulator.However,because the electrode gap of the lithium niobate film modulator is very narrow,when the microwave frequency gets higher,it leads to higher microwave loss,and the electro-optical performance of the modulator will be greatly reduced.Here,we propose a thin film lithium niobate electro-optic modulator with a bimetallic layer electrode structure to achieve microwave loss less than 8 dB/cm in the range of 200 GHz,exhibiting a voltage-length product of 1.1 V·cm and a 3 dB electro-optic bandwidth greater than 160 GHz.High-speed data transmission test has been performed,showing good performance.展开更多
The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of ...The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.展开更多
There are two different effects to generate group effect and Gires-Tournois effect. Both effects are delay dispersion by multilayer thin film mirrors： chirper employed to introduce desired dispersion in the designed ...There are two different effects to generate group effect and Gires-Tournois effect. Both effects are delay dispersion by multilayer thin film mirrors： chirper employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti：sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti：sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.展开更多
文摘Properties of symmetrical layers as matching layers in multilayer thin film design were analyzed. A calculation method was presented to derive parameters of desired equivalent refractive index. A harmonic beam splitter was designed and fabricated to test this matching method. OCIS codes： 230.1360, 220.0220, 310.6860.
基金supported by BEN TEN THECO.,and National Science Council,under contract 96-2622-E-152-001-CC397-2410-H-152-016
文摘A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.
基金supported by the Self-deployment Project of Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(No.2021ZZ104)the Fujian Province STS Project(Nos.2020T3002 and 2022T3012)。
文摘Thin-film lithium niobate electro-optical modulator will become the key device in the future optical communication,which has the advantages of high modulation rate,low half-wave voltage,large bandwidth,and easy integration compared with conventional bulk lithium niobate modulator.However,because the electrode gap of the lithium niobate film modulator is very narrow,when the microwave frequency gets higher,it leads to higher microwave loss,and the electro-optical performance of the modulator will be greatly reduced.Here,we propose a thin film lithium niobate electro-optic modulator with a bimetallic layer electrode structure to achieve microwave loss less than 8 dB/cm in the range of 200 GHz,exhibiting a voltage-length product of 1.1 V·cm and a 3 dB electro-optic bandwidth greater than 160 GHz.High-speed data transmission test has been performed,showing good performance.
文摘The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.
基金This work was supported by the National Natural Science Foundation of China under Grant No. 60378005
文摘There are two different effects to generate group effect and Gires-Tournois effect. Both effects are delay dispersion by multilayer thin film mirrors： chirper employed to introduce desired dispersion in the designed mirror. Thus the designed mirror provides large dispersion throughout broad waveband. Such mirror can be used for dispersion compensation in Ti：sapphire femtosecond lasers. Most group delay dispersion of a 5-mm Ti：sapphire crystal can be compensated perfectly with only four bounces of the designed mirror.
