NiCr micron-resistor was designed and prepared by magnetron sputtering and lithography on the substrate of silicon with different powers. It is found that there exists a big gap in the TCR between the annealed group a...NiCr micron-resistor was designed and prepared by magnetron sputtering and lithography on the substrate of silicon with different powers. It is found that there exists a big gap in the TCR between the annealed group and the un-annealed group. A series of tests were made to figure out the reasons lying behind the gap in the TCR between the annealed group and the un-annealed group. UV reflection results show that there is no increase in the concentration of free electrons after annealing. However, the data obtained from XRD reveal that the annealing does not have an obvious influence on the strain of thin films, but really increases the grain size of thin films. Therefore, the grain boundary scattering plays a dominant role in explaining the obvious difference in the TCR. Finally through appropriate methods, a micron-resistor for heating-up with a low TCR value was obtained.展开更多
The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical prope...The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.展开更多
文摘NiCr micron-resistor was designed and prepared by magnetron sputtering and lithography on the substrate of silicon with different powers. It is found that there exists a big gap in the TCR between the annealed group and the un-annealed group. A series of tests were made to figure out the reasons lying behind the gap in the TCR between the annealed group and the un-annealed group. UV reflection results show that there is no increase in the concentration of free electrons after annealing. However, the data obtained from XRD reveal that the annealing does not have an obvious influence on the strain of thin films, but really increases the grain size of thin films. Therefore, the grain boundary scattering plays a dominant role in explaining the obvious difference in the TCR. Finally through appropriate methods, a micron-resistor for heating-up with a low TCR value was obtained.
文摘The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.
