Influence of liquid film shape on evaporation performance of agitated thin film evaporator

The agitated thin film evaporator(ATFE),which is known for its high efficiency,force the material to form a film through the scraping process of a scraper,followed by evaporation and purification.The complex shape of the liquid film inside the evaporator can significantly affect its evaporation capability.This work explores how change in shape of the liquid films affect the evaporation of the materials with non-Newtonian characteristics,achieved by changing the structure of the scraper.Examining the distribution of circumferential temperature,viscosity,and mass transfer of the flat liquid film shows that the film evaporates rapidly in shear-thinning region.Various wavy liquid films are developed by using shear-thinning theory,emphasizing the flow condition in the thinning area and the factors contributing to the exceptional evaporation capability.Further exploration is conducted on the spread patterns of the wavy liquid film and flat liquid film on the evaporation wall throughout the process.It is noted that breaking the wavy liquid film on the evaporating wall during evaporation is challenging due to its film-forming condition.For which the fundamental causes are demonstrated by acquiring the data regarding the flow rate and temperature of the liquid film.The definitive findings of the analysis reveal a significant improvement in the evaporation capability of the wavy liquid film.This enhancement is attributed to increasing the shear-thinning areas and maintaining the overall shape of the film throughout the entire evaporation process.

Effect of Mg-Film Thickness on the Formation of Semiconductor Mg_2Si Films Prepared by Resistive Thermal Evaporation Method

Mg films of various thicknesses were deposited on Si（111） substrates at room temperature by resistive thermal evaporation method, and then the Mg/Si samples were annealed at 40 ℃ for 4 h. The effects of Mg film thickness on the formation and structure of Mg2Si films were investigated. The results showed that the crystallization quality of Mg2Si films was strongly influenced by the thickness of Mg film. The XRD peak intensity of Mg2Si （220） gradually increased initially and then decreased with increasing Mg film thickness. The XRD peak intensity of Mg2Si （220） reached its maximum when the Mg film of 380 um was used. The thickness of the Mg2Si film annealed at 400℃ for 4 h was approximately 3 times of the Mg film.

Micro–Nano Water Film Enabled High‑Performance Interfacial Solar Evaporation

Interfacial solar evaporation holds great promise to address the freshwater shortage.However,most interfacial solar evaporators are always filled with water throughout the evaporation process,thus bringing unavoidable heat loss.Herein,we propose a novel interfacial evaporation structure based on the micro–nano water film,which demonstrates significantly improved evaporation performance,as experimentally verified by polypyrrole-and polydopamine-coated polydimethylsiloxane sponge.The 2D evaporator based on the as-prepared sponge realizes an enhanced evaporation rate of 2.18 kg m^(−2)h^(−1)under 1 sun by fine-tuning the interfacial micro–nano water film.Then,a homemade device with an enhanced condensation function is engineered for outdoor clean water production.Throughout a continuous test for 40 days,this device demonstrates a high water production rate(WPR)of 15.9–19.4 kg kW^(−1)h^(−1)m^(−2).Based on the outdoor outcomes,we further establish a multi-objective model to assess the global WPR.It is predicted that a 1 m^(2)device can produce at most 7.8 kg of clean water per day,which could meet the daily drinking water needs of 3 people.Finally,this technology could greatly alleviate the current water and energy crisis through further large-scale applications.

Correlations between the Optical Properties and the Microstructure of TiO_2 Thin Films Prepared by Reactive Electron-beam Evaporation

High refractive index TiO 2 thin films were deposited on BK7 glass by reactive electron-beam (REB) evaporation at pressure of 2×10 -2Pa,deposition rate of 0.2nm/s and at various substrate temperatures from 120℃ to 300℃.The refractive index and the thickness of the films were measured by visible spectroscopic ellipsometry (SE) and determined from transmission spectra.Optical properties and structure features were characterized by UV-VIS,SEM and XRD,respectively.The measurement and analysis on transmission spectra of all samples show that with the substrate temperature increasing from 120℃ to 300℃,the refractive indices of thin films increase from 1.7 to 2.1 and the films after heat treatment have higher refractive indices due to its crystallizing.The XRD analysis results indicate that the structure of TiO 2 thin films deposited on BK7 glass at substrate temperatures of 120℃,200℃ and 300℃ is amorphous,after post-annealing under air condition at 400℃ for 1 hour,the amorphous structure is crystallized,the crystal phase is of 100% anatase with strong preferred orientation (004) and the grain size of crystalline is within 3.6-8.1nm,which is consistent with results from SEM observation.

Effects of Different Titanium Sub-oxide on the Properties of Titanium Dioxide Thin Films Prepared by E-beam Evaporation Deposition with Ion Auxiliary

TiO2 thin films were prepared with Ti2O3, Ti3O5 and TiO2 as raw materials, by electron-beam evaporation deposition, using O^2- ion beam （ O2 purity up to 99.99% ） as auxiliary means. The crystal structures of the samples were inspected by the X-ray diffraction （XRD） method, and the evaporation character of warious raw materials was analyzed. Transmittance spectra were measured through a U-3310 spectrophotometer （ wavelength ranging from 200 nm to 900 nm）. The refractive index n and the thickness of films were determined from transmission spectra. The experimental results show that the thin films taking Ti2O3 as their raw material have a strong absorption, when taking Ti3O5 and TiO2 as raw materials, the thin films would have good optical properties. The experiments also show that, the crystal structure of all thin films is amorphous before post-annealing and the Ti3O5 is a congruent evaporation phase in the Ti-O system.

PREPARATION AND PROPERTIES OF Ni-Cr AND Fe-Cr-Al FILMS BY VACUUM EVAPORATION

Ni-Cr and Fe-Cr-Al films deposited on the Al2O3 substrate are studied by a method of vacuum evaporation in this paper. Influence of resistance value on density and evaporation parameters of the films reveals that the resistance of films and the adhesion of films to substrates are determined by the evaporation time and the substrate temperate under the condition of the maximum vacuity of 6.2×10-4 Pa, respectively.

In-situ growth of a CdS window layer by vacuum thermal evaporation for CIGS thin film solar cell applications

Highly crystalline and transparent CdS films are grown by utilizing the vacuum thermal evaporation （VTE） method. The structural, surface morphological, and optical properties of the films are studied and compared with those prepared by chemical bath deposition （CBD）. It is found that the films deposited at a high substrate temperature （200 ℃） have a preferential orientation along （002） which is consistent with CBD-grown films. Absorption spectra reveal that the films are highly transparent and the optical band gap values are found to be in a range of 2.44 eV-2.56 eV. Culnl_xGaxSe2 （CIGS） solar cells with in-situ VTE-grown CdS films exhibit higher values of Voc together with smaller values of Jsc than those from CBD. Eventually the conversion efficiency and fill factor become slightly better than those from the CBD method. Our work suggests that the in-situ thermal evaporation method can be a competitive alternative to the CBD method, particularly in the physical- and vacuum-based CIGS technology.

Influences of annealing temperature on properties of Fe^2+:ZnSe thin films deposited by electron beam evaporation and their applications to Q-switched fiber laser

Fe^2+:ZnSe thin films are prepared on sapphire substrate at room temperature by electron beam evaporation and then annealed in vacuum(about 1×10^-4 Pa)at different temperatures.The influences of thermal annealing on the structural and optical properties of these films such as grain size and optical transmittance are investigated.The x-ray diffraction patterns show that the Fe2+:ZnSe thin film is preferred to be oriented along the(111)plane at different annealing temperatures.After the film is annealed,the full-width-at-half-maximum(FWHM)of the x-ray diffraction peak profile(111)of the film decreases and its crystal quality is improved.Scanning electron microscope images show that the films are more dense after being annealed.Finally,the sample is used as a saturable absorber in ZBLAN fiber laser.The annealed Fe^2+:ZnSe thin films can be used to realize stable Q-switching modulation on ZBLAN fiber laser.The results demonstrate that the Fe2+:ZnSe thin film is a promising material for generating the high-power pulses of mid-infrared Q-switched fiber lasers.

Fe-doped ZnS film fabricated by electron beam evaporation and its application as saturable absorber for Er:ZBLAN fiber laser

High-quality Fe-doped Zn S films have been fabricated by electron beam evaporation.After the doping,the fabricated films still maintain the preferential crystalline orientation and phase purity of the host Zn S.According to the observation of surface morphology,the root mean-square roughness of the samples increases slightly with the increase of doping content.All of the prepared samples are in cubic zinc blende structure of Zn S.Transmission spectrum confirms a more obvious dip near 3μm with higher dopant concentration and it can be attributed to the typical^(5)E→^(5)T_(2)transition of Fe^(2+).Fe-doped Zn S film is also successfully used for Q-switched Er:ZBLAN fiber laser.

Preparation of High Ga Content Cu(In,Ga)Se₂Thin Films by Sequential Evaporation Process Added In₂S₃

High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the ?In2S3 /(Ga2Se3+ In2Se3) ratio.

Characteristic Research on Evaporated Explosive Film

The evaporation source of evaporated explosive was designed and improved based on the inherent specialties of explosive. The compatibility of explosives and addition agent with evaporation vessels was analyzed. The influence of substrate temperature on explosive was analyzed, the control method of substrate temperature was suggested. The influences of evaporation rate on formation of explosive film and mixed explosive film were confirmed. Optimum evaporation rate for evaporation explosive and the better method for evaporating mixed explosive were presented. The necessary characteristics of the evaporated explosive film were obtained by the research of the differences between the evaporated explosive and other materials.

Stable Isotopes and Chloride Applied as Soil Water Tracers for Phreatic Evaporation Experiment

A phreatic water evaporation experiment,without rainfall influence,was designed to study the mechanisms of soil water movement through groundwater recharge to the unsaturated zone. Soil moisture content,chloride concentration,and δD and δ~18 O values of soil water were measured. Results showthat with decreasing soil moisture content,the chloride concentration of leachate( ρ_f(Cl)) in the capillary water layer decreases,whereas the ρ_f(Cl) value of the hanging and film water layers above the capillary water layer increases. With the combined δD and δ~18 O values,the soil water in the hanging and film water layers is influenced by evaporation,although a dry sand layer of 39 cm exists above the wet sand layer. The highest evaporation rate and the largest salt accumulation occur at a depth of about 39 cm in columns d,e,and f(Six polyvinyl chloride columns were assigned as column a,b,c,d,e,and f). We deduce that soil water migrates in the form of liquid water above the capillary water layer. In the experiment,a part of phreatic water consumed is used for the movement of soil water,whereas the other part is lost to evaporation. Soil water could continue migrating upward with prolonged experiment duration.

Structural, Optical and Electrical Properties of Evaporated CdSe Films

CdSe films are of great interest for use in thin film photoelectric devices. A simple chemical precipitation method is adopted for the first time to synthesise CdSe powder. Films on glass obtained at different substrate temperatures TS such as 300, 373, 423 and 473 K have been characterised by X-ray diffraction, optical absorption and Hall measurements.

Evaporated Thin Films of CdS and CdTe: Optimization for Photovoltaic Applications

Thin films of cadmium sulphide and cadmium telluride have been prepared by thermal evaporation under various conditions of deposition. These films have been characterized optically. electrically and for structure determination. The results of these characterizations along with the initial results of all thin film CdS/CdTe solar cells are presented in this paper

Different Interaction Mechanisms of Evaporated Porphyrin Films Exposed to NO₂

In this work, metal free and zinc tetraphenylporphyrin films were employed as nitrogen dioxide (NO2) gas sensors. The films were vacuum evaporated and the sensor response was evaluated as changes in the optical absorption spectra, hydrophobic properties and conductivity at different gas concentrations. From UV-Vis results, important changes in the absorption peaks were observed after gas exposure. The morphology of the films before and after gas interaction was obtained by using scanning electron and atomic force microscopy. The films morphology showed a degradation after gas adsorption for the metal free system but gas entrapment for the zinc porphyrin film. In order to elucidate the gas adsorption phenomena, density functional theory calculations were also performed. Here, it was observed that the porphyrin chemical structure not only affects the gas coordination sites which affect the porphyrin electronic distribution and packing arrangement, but also, determines the gas detection mechanism for sensing applications.

Dependence of Structural and Optoelectrical Properties on the Composition of Electron Beam Evaporated Zn_xCd_(1-x)S Thin Films

Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum.These films are characterized for their optical, electricaI and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearIy from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Ωcm to 5.5× 106Ωcm for x=0~0.6. All the samples show cubic structure after annealing in air at 250℃ for 40 min.The lattice constant ao varies from 0.5884 nm to 0.54109 nm linearly.

Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

Strontium-zinc-oxide（SrZnO） films forming the semiconductor layers of thin-film transistors（TFTs） are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide（ZnO） with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.

Influence of Ag and Sn incorporation in In_2S_3 thin films

Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.