Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

A multi-hole vertical-cavity surface-emitting laser （VCSEL） operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of an oxidation- confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10% are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes.

Frequency-locking and threshold current-lowering effects of a quantum cascade laser and an application in gas detection field

In this paper,the frequency-locking and threshold current-lowering effects of a quantum cascade laser are studied and achieved.Combined with cavity-enhanced absorption spectroscopy,the noninvasive detection of H_2 with a prepared concentration of 500 ppm in multiple dissolved gases is performed and evaluated.The high frequency selectivity of 0.0051 cm^-1 at an acquisition time of 1 s allows the sensitive detection of the（1-0） S（l） band of H_2 with a high accuracy of（96.53±0.29）%and shows that the detection limit to an absorption line of 4712.9046 cm^-1 is approximately（17.26±0.63） ppm at an atmospheric pressure and a temperature of 20 ℃.

Threshold Current Characteristics of Intracavity-contacted Vertical-cavity Surface-emitting Laser

Threshold current characteristics of intracavity-contacted oxide-confinedvertical-cavity surface-emitting laser had been investigated in detail. Threshold currentcharacteristics not only were depended on the size of oxide-aperture, but also were also stronglyaffected by the mismatch of its lasing mode and gain peak. For the same degree detuning of the gainpeak and lasing mode at room temperature, the threshold current was approximately proportional tothe square of the oxide-aperture diameter of above 5 μm. For the same oxide-aperture device, thelarger the detuning degree of the lasing mode shifted to the shorter wavelength of the gain peak atroom temperature was, the lower the minimum threshold current was. The wavelengths of the lasingmode and gain peak were ± N X 10 nm detuning at 300 K, The temperature of the minimum thresholdcurrent was changed to be about ± N X 40 K(N real number). The calculated results were consistentwith the experimental ones.

Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density

We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.

Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface electric field ex- pressions have been obtained by solving Poisson＇s equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate （SM-DG） MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.

Influence of the thickness change of the wave-guide layers on the threshold current of GaAs-based laser diode

The paper mainly deals with theoretical investigations of the effect of the thickness change of the wave- guide layers on the threshold current. It is analyzed according to the result of a numerical simulation that asks how does the shift of the active region position affect the threshold current for a single quantum well （SQW） and double quantum well （DQW） laser diode （LD） with a relatively narrow waveguide. It is found that the variation trend of threshold current and optimum position of QW are different in SQW and DQW LD with 0.2 μm-thick waveguide, which may be due to the higher variation rate of optical loss in DQW LD with the shift of the active region. It is also found that in terms of either SQW or DQW LD, the variation tendency of the threshold current with a different loss coefficient of the p-cladding layer makes little difference for the relatively narrow waveguide LD. Moreover, the variation trend of the threshold current and the optimum position of QW is almost the same in SQW and DQW LD with 0.8 μm-thick waveguide, because the optical loss is small enough and the threshold current is dominated by the optical confinement factor （OCF） in QW.

Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

Electroluminescence （EL） and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes （LDs） before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements.

Analytical model for the dispersion of sub-threshold current in organic thin-film transistors

This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current （also known as zero-current point dispersion） in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors： large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.

Model of Current Threshold for Perception in Testing Electrical Safety Performance

A generalized mathematical model of human body current threshold for perception was established and the current flowing through human body could be arbitrary cyclical waveforms.The relationship between human body current threshold for perception and current frequency, true root mean square(RMS) value and influence factor was described.A test system was established based on electroencephalogram(EEG) to study the relationship between human body current threshold for perception and current waveform, frequency ...

Quantitative assessment of sensory functions after 3 surgical approaches for trigeminal neuralgia by current perception threshold measurement

Objective： To quantitatively identify and grade trigeminal sensory functions after 3 major surgical procedures of trigeminal neuralgia using a newly developed quantitative sensory testing technique, current perception threshold measurement （CPTM）. Methods： In the current study, there were 48 trigeminal neuralgia patients without history of prior surgical treatment. These patients received one of the following 3 surgical procedures, microvascular decompression （MVD）, peripheral nerve block with alcohol （PNB）, or percutaneous radiofrequency thermocoagulation （PRFT）. The quantitative sensory testing measurement, CPTM, and conventional qualitative sensory testing measurements were performed preoperatively and postoperatively to evaluate and grade the trigeminal sensory functions All 3 major cutaneous sensory fiber types, large myelinated fibers （A beta）, small myelinated fibers （A delta） and unmyelinated fibers（C） were allowed to quantitatively evaluate and grade by CPTM. The results of the measurements were statistically analyzed using a one-way analysis of variance （single factor）. Each subject was his/her own control for comparison of the preoperative to postoperative state on the asymptomatic and symptomatic sides. Subjects were tested 48 h preoperatively and 4 weeks postoperatively. Results： PNB with alcohol and PRFT caused significant sensory dysfunction postoperatively in every fiber type, indicating damage to all fibers. On the contrary, the sensory function in all 3 fiber types was unchanged after MVD management. Conclusion： Among the 3 major surgical procedures tested, only MVD preserves sensory function in trigeminal system. CPTM is of quantitative nature on the evaluation of sensory functions of nerve fibers

基于0.15μm SOI工艺的耐高温短沟器件设计与实现

绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。

一种用于微能量收集的升压电荷泵设计

开关电容直流-直流(Direct Current-Direct Current,DC-DC)变换器是电源管理系统中极其重要的一部分,升压电荷泵是其中的一个分支。在微能量收集的应用场景中,升压电荷泵的研究热点是实现低的泄漏电流和低的阈值电压损耗。多数升压电荷泵设计为了减少阈值电压损耗和电荷共享等非理想效应,使泄漏电流增大,或结构变得复杂,导致面积增大,不适用于微能量收集场景。Dickson电荷泵是早期的电荷泵结构,其结构简单实用,但较大的阈值电压损耗是其最大的缺点。为此,本文基于Dickson电荷泵进行分析,采用TSMC 250 nm工艺,使用中等阈值电压(Medium Threshold Voltage,MVT)型金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOS)代替二极管,降低阈值电压损耗,再利用体源二极管偏置技术,进一步降低阈值电压损耗。本文利用Positive MOS(PMOS)管与Negative MOS(NMOS)管级联的形式,减少泄漏电流,且NMOS管采用深N阱工艺,避免加入辅助电路。仿真结果表明,本文的升压电荷泵结构设计具有较好的性能表现,达到了设计要求。

光通信用激光器及光电二极管质子位移损伤效应研究

激光器、探测器等光通信器件对空间辐射环境中高能粒子引入的位移损伤敏感,且随时间累积不可恢复。针对光通信用垂直腔面发射激光器和光电二极管开展了质子辐照试验,并对辐照前后器件的光功率-电流-电压曲线、阈值电流、低频噪声等参数进行了测试分析。研究结果表明:由于质子辐照后,载流子被辐射感生缺陷形成的非辐射复合中心捕获,降低了少数载流子的寿命,复合产生的光子数量减少,因此850 nm垂直腔面发射激光器在质子辐照后光输出功率、外量子效率随注量的增加而降低;InGaAs光电二极管暗电流和噪声密度谱增加。

AlN/β-Ga_(2)O_(3)HEMT直流特性仿真

本文利用器件仿真软件对AlN/β-Ga_(2)O_(3)高电子迁移率晶体管(HEMT)器件的直流特性进行研究。由于AlN具有很强的极化效应,在AlN/β-Ga_(2)O_(3)异质结界面处产生高浓度二维电子气(2DEG),使AlN/β-Ga_(2)O_(3)异质结基HEMT具有更加优越的器件性能。理论计算得到AlN/β-Ga_(2)O_(3)异质结界面处产生的面电荷密度为2.75×10^(13) cm^(-2)。通过分析器件的能带结构、沟道电子浓度分布,研究AlN势垒层厚度、栅极长度、栅漏间距,以及金属功函数等参数对器件转移特性和输出特性的影响。结果表明:随着AlN势垒层厚度的增大,阈值电压减小,最大跨导减小,沟道电子浓度增大使饱和漏电流增大;随着栅极长度缩短,跨导增大,当栅极长度缩短至0.1μm时,器件出现了短沟道效应,并且随着栅极长度的缩短,栅下沟道区电子浓度增大,而电子速度基本不变,导致饱和漏电流增大,导通电阻减小,并且器件的饱和特性变差;随着栅漏间距的增大,跨导增大,沟道区电子浓度不变,而电子速度略有增加,导致饱和漏电流增大;肖特基栅金属功函数的增加会增大阈值电压,不会改变器件跨导,沟道电子浓度减小导致饱和漏电流减小。上述结论为后面的器件的优化改进提供了理论依据。

石灰石粉掺量对混凝土中钢筋脱钝临界氯离子含量的影响

本工作研究了不同石灰石粉掺量(10%、20%、30%,质量分数,下同)对钢筋脱钝临界氯离子含量的影响,对混凝土试件进行干湿循环处理以加速氯离子渗透,同时采用半电池电位和电化学阻抗谱分别测定了钢筋的自腐蚀电位和腐蚀电流密度。结果表明,临界氯离子含量随着石灰石粉掺量的增加而减小,这主要是因为石灰石粉的掺入导致水泥含量降低,从而使混凝土孔隙液pH值降低。XRD分析表明石灰石粉的掺入抑制了单硫型水化硫铝酸钙(AFm)相的生成,从而降低了水化产物的氯离子结合能力。腐蚀电流密度的变化趋势服从三参数Weibull分布,其概率密度可以表征钝化膜破裂的速率,随着石灰石粉掺量的增加,钝化膜破裂速率增加。

Very low threshold operation of quantum cascade lasers

A strain-compensated InP-based quantum cascade laser（QCL） structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy（MBE）.By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm^2 in pulsed operation and 0.56 kA/cm^2 in continuous-wave（cw） operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity（HR） coating on its rear facet.

兼顾电缆线路效率和可靠性的载流量动态阈值研究

针对当前配电网电缆为了运行可靠性,多采用较低载流量的固定阈值方法,电缆利用率低的问题,本文提出了一种载流量动态阈值的方法。该方法从理论上研究电缆线路载流量与导体温度的关系,通过实际运行的电缆工程的实测数据量化电缆载流量与导体温度的函数关系,并测定电缆线路的基准阈值,以此实现线路的阈值动态化计算。算法应用于智能电缆测控系统的动态阈值监测功能模块,线路所得实际运行数据验证了本方法的有效性。

少阴益气通脉汤治疗糖尿病周围神经病变患者的临床疗效

目的探究糖尿病周围神经病变(diabetic peripheral neuropathy,DPN)治疗中应用少阴益气通脉汤的效果。方法选取2023年6月—2024年1月延边朝鲜族自治州朝医医院内分泌科就诊的72例DPN患者作为研究对象,按照治疗方法不同分为对照组(常规控糖治疗措施与甲钴胺片、依帕司他联用治疗)、治疗组(对照组基础上加入少阴益气通脉汤治疗),各36例,比较两组治疗前及治疗4周后的多伦多临床评分系统(To-ronto Clinical Scoring System,TCSS)评分、糖代谢指标(空腹血糖、糖化血红蛋白)、四肢电流感觉阈值、证候积分(四肢不温、肌肤甲错、筋骨疼痛、麻木不仁、步履艰难、脉濡缓或脉弦细涩)。结果治疗4周后,治疗组TCSS评分、糖代谢指标、四肢电流感觉阈值均优于对照组,差异有统计学意义(P均<0.05)。治疗4周后,治疗组证候积分低于对照组,差异有统计学意义(P<0.05)。结论DPN患者治疗中加入少阴益气通脉汤,可改善糖代谢指标、四肢电流感觉阈值及证候积分。

计及互感器融合偏差的变电站站用电剩余电流监测系统研究

稳定的站用电源系统是变电站生产设备可靠工作之本,一旦站用电系统出现问题将直接或间接地影响变电站安全。目前变电站站用电绝缘监测主要通过对变电站电源系统剩余电流实时监测实现。然而剩余电流监测方法主要面向多电流互感器融合测量场合,现有的测量系统未考虑融合过程中互感器偏差影响,致使误报警状况频出。有鉴于此,本文提出了一套计及互感器融合偏差的变电站站用电剩余电流监测系统。该系统同步采集并实时合成多通道电流互感器剩余电流数据,并利用自回归差分移动平均模型(ARIMA)对剩余电流进行时序建模与异常检测,再使用小波阈值去噪算法对修复后的剩余电流序列降噪,以实现剩余电流的高效、精准监测。为验证所提出系统的有效性,在变电站进行现场试验。结果表明,该系统能够成功识别并修复剩余电流异常值数据且去噪效果显著。修复数据最大绝对误差仅5.9 mA,与0.5S级互感器测量数据相比,去噪后数据平均绝对百分比误差与均方根误差分别降低了0.024与1.222。