Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical ...Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.展开更多
Low-k and high aspect ratio blind through-silicon-vias （TSVs） to be applied in ＂via-last/backside via＂ 3-D integration paradigm were fabricated with polyimide dielectric liners formed by vacuum-assisted spin coati...Low-k and high aspect ratio blind through-silicon-vias （TSVs） to be applied in ＂via-last/backside via＂ 3-D integration paradigm were fabricated with polyimide dielectric liners formed by vacuum-assisted spin coating technique. MIS trench capacitors with diameter of-6 μm and depth of-54 μm were successfully fabricated with polyimide insulator step coverage better than 30%. C-V characteristics and leakage current properties of the MIS trench capacitor were evaluated under thermal treat- ment. Experimental results show that, the minimum capacitance density is around 4.82 nF/cm2, and the leakage current density after 30 cycles of thermal chock tests becomes stable and it is around 30 nA/cm2 under bias voltage of 20 V. It also shows that, the polyimide dielectric liner is with an excellent capability in constraining copper ion diffusion and mobile charges even un- der test temperature as high as 125℃. Finite element analysis results show that TSVs with polyimide dielectric liner are with lower risks in SiO2 interlayer dielectric （ILD） fracture and interfacial delamination along dielectric-silicon interface, thus, higher thermo-mechanical reliability can be expected.展开更多
Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(TSV).This paper investigated the flow mechanism of the vacuum-assisted polymer filling process bas...Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(TSV).This paper investigated the flow mechanism of the vacuum-assisted polymer filling process based on experiments and numerical simulation,and studied the effect of vacuum pressure,viscosity of polymer and aspect-ratio of trench on the filling performance.A 2D axisymmetric model,consisting of polymer partially filled into the trench and void at the bottom of trench,was developed for the computational fluid dynamics(CFD)simulation.The simulation results indicate that the vacuum-assisted polymer filling process goes through four stages,including bubble formation,bubble burst,air elimination and polymer re-filling.Moreover,the simulation results suggest that the pressure significantly affects the bubble formation and the polymer re-filling procedure,and the polymer viscosity and the trench aspect-ratio influence the duration of air elimination.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
文摘Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.
基金supported by the National Natural Science Foundation of China(Grant Nos.61404008&61574016)"111"Project of China(Grant No.B14010)
文摘Low-k and high aspect ratio blind through-silicon-vias （TSVs） to be applied in ＂via-last/backside via＂ 3-D integration paradigm were fabricated with polyimide dielectric liners formed by vacuum-assisted spin coating technique. MIS trench capacitors with diameter of-6 μm and depth of-54 μm were successfully fabricated with polyimide insulator step coverage better than 30%. C-V characteristics and leakage current properties of the MIS trench capacitor were evaluated under thermal treat- ment. Experimental results show that, the minimum capacitance density is around 4.82 nF/cm2, and the leakage current density after 30 cycles of thermal chock tests becomes stable and it is around 30 nA/cm2 under bias voltage of 20 V. It also shows that, the polyimide dielectric liner is with an excellent capability in constraining copper ion diffusion and mobile charges even un- der test temperature as high as 125℃. Finite element analysis results show that TSVs with polyimide dielectric liner are with lower risks in SiO2 interlayer dielectric （ILD） fracture and interfacial delamination along dielectric-silicon interface, thus, higher thermo-mechanical reliability can be expected.
文摘Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(TSV).This paper investigated the flow mechanism of the vacuum-assisted polymer filling process based on experiments and numerical simulation,and studied the effect of vacuum pressure,viscosity of polymer and aspect-ratio of trench on the filling performance.A 2D axisymmetric model,consisting of polymer partially filled into the trench and void at the bottom of trench,was developed for the computational fluid dynamics(CFD)simulation.The simulation results indicate that the vacuum-assisted polymer filling process goes through four stages,including bubble formation,bubble burst,air elimination and polymer re-filling.Moreover,the simulation results suggest that the pressure significantly affects the bubble formation and the polymer re-filling procedure,and the polymer viscosity and the trench aspect-ratio influence the duration of air elimination.
