We theoretically investigate the transparency effect with a hybrid system composed of a photonic molecule and dipole emitter. It is shown that the transparency effect incorporates both the coupled resonator-induced tr...We theoretically investigate the transparency effect with a hybrid system composed of a photonic molecule and dipole emitter. It is shown that the transparency effect incorporates both the coupled resonator-induced transparency(CRIT) effect and the dipole-induced transparency(DIT) effect. It is found that the superposed transparency windows are consistently narrower than the CRIT and DIT transparency windows. Benefiting from the superposed transparency effect, the photonic Faraday rotation effect could be realized in the photonic molecule system, which is useful for entanglement generation and quantum information processing.展开更多
Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o...Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.展开更多
A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitt...A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitter formed by boron implantation.Working in a deep punch-through state during its normal operating condition,it still possesses all the characteristics of the robust non-punch-through IGBT (NPT-IGBT).With a chip-thickness thinner than that of the NPT-IGBT,the new structure presents a better trade-off relationship between the on-state voltage-drop and the turn-off loss.Experimental results show that the power loss of the new structure IGBT is 40% lower than that of the NPT-IGBT.展开更多
近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流...近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)的特性及其结构和原理;分析了6 500 V SiC ETO的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO晶闸管技术未来发展的方向。展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11547258,11647129 and 11405052the Hunan Provincial Natural Science Foundation of China under Grant Nos 2018JJ3006,2017JJ3005 and 2016JJ3006+4 种基金the Scientific Research Fund of Hunan Provincial Education Department under Grant Nos 16B036 and 15A028the Science and Technology Plan Project of Hunan Province under Grant No 2016TP1020the Open Fund Project of Hunan Provincial Key Laboratory of Intelligent Information Processing and Application for Hengyang Normal University under Grant No IIPA18K08the Open Fund Project of the Hunan Provincial Applied Basic Research Base of Optoelectronic Information Technology under Grant No GD18K04the Open Fund Project of the Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of the Ministry of Education under Grant Nos QSQC1704 and QSQC1706
文摘We theoretically investigate the transparency effect with a hybrid system composed of a photonic molecule and dipole emitter. It is shown that the transparency effect incorporates both the coupled resonator-induced transparency(CRIT) effect and the dipole-induced transparency(DIT) effect. It is found that the superposed transparency windows are consistently narrower than the CRIT and DIT transparency windows. Benefiting from the superposed transparency effect, the photonic Faraday rotation effect could be realized in the photonic molecule system, which is useful for entanglement generation and quantum information processing.
文摘Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable.
文摘A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitter formed by boron implantation.Working in a deep punch-through state during its normal operating condition,it still possesses all the characteristics of the robust non-punch-through IGBT (NPT-IGBT).With a chip-thickness thinner than that of the NPT-IGBT,the new structure presents a better trade-off relationship between the on-state voltage-drop and the turn-off loss.Experimental results show that the power loss of the new structure IGBT is 40% lower than that of the NPT-IGBT.
文摘近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)的特性及其结构和原理;分析了6 500 V SiC ETO的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO晶闸管技术未来发展的方向。
