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Time Related Influence of α-Mercapto-β-(2-Furyl) Acrylic Acid (MFA) in Cadmium Toxicity 被引量:1
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作者 SHASHI KHANDELWAL SUSHIL K.TANDON 《Biomedical and Environmental Sciences》 SCIE CAS CSCD 1991年第3期304-309,共6页
The effect of a-mercapto-β-(2-furyl) acrylic acid (MFA, 200 mg/kg, oral) administered 30 min or 24 h post cadmium (1 mg/kg, i.p.) exposure on cadmium toxicity, was investigated in rats. The Cd induced hepatic metallo... The effect of a-mercapto-β-(2-furyl) acrylic acid (MFA, 200 mg/kg, oral) administered 30 min or 24 h post cadmium (1 mg/kg, i.p.) exposure on cadmium toxicity, was investigated in rats. The Cd induced hepatic metallothionein was reduced by MFA treatment parallel to the depletion of hepatic Cd. However, in renal tissue,MFA caused only redistribution of metal from the paniculate to the soluble fraction. Hepatic and renal Zn and renal Cu were significantly increased on Cd exposure. MFA therapy, however, lowered the hepatic Zn and increased the renal Cu levels. The action of MFA appears to be via metal chelation rather than by MT induction. 展开更多
关键词 MFA Acrylic Acid in Cadmium Toxicity Mercapto FURYL time Related influence of
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Influence of Al Preflow Time on Surface Morphology and Quality of AlN and GaN on Si(111) Grown by MOCVD 被引量:1
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作者 刘波亭 马平 +2 位作者 李喜林 王军喜 李晋闽 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第5期119-123,共5页
We investigate the influence of A1 preflow time on surface morphology and quality of AIN and GaN. The AIN and GaN layers are grown on a Si (111) substrate by metal organic chemical vapor deposition. Scanning electro... We investigate the influence of A1 preflow time on surface morphology and quality of AIN and GaN. The AIN and GaN layers are grown on a Si (111) substrate by metal organic chemical vapor deposition. Scanning electron microscopy, atomic force microscopy, x-ray diffraction and optical microscopy are used for analysis. Consequently, we find significant differences in the epitaxial properties of AlN buffer and the GaN layer, which are dependent on the AI preflow time. A1 preflow layers act as nucleation sites in the case of AiN growth. Compact and uniform AIN nucleation sites are observed with optimizing A1 preflow at an early nucleation stage, which will lead to a smooth AIN surface. Trenches and AlN grain clusters appear on the AIN surface while meltoback etching occurs on the GaN surface with excessive A1 preflow. The GaN quality variation keeps a similar trend with the AIN quality, which is influenced by AI preflow. With an optimized duration orAl preflow, crystal quality and surface morphology of AIN and GaN could be improved. 展开更多
关键词 GAN ALN AIN Grown by MOCVD influence of Al Preflow time on Surface Morphology and Quality of AlN and GaN on Si SI
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