The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics application...The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.展开更多
Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carr...Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carrier transport efficiencies, and affect the stability of photovoltaic devices. However, the impact of these buried interfacial voids on tin perovskites, a promising avenue for advancing lead-free photovoltaics, has been largely overlooked. Here, we utilize an innovative weakly polar solvent pretreatment strategy(WPSPS) to mitigate buried interfacial voids of tin perovskites. Our investigation reveals the presence of numerous voids in tin perovskites during annealing, attributed to trapped dimethyl sulfoxide(DMSO) used in film formation. The WPSPS method facilitates accelerated DMSO evaporation, effectively reducing residual DMSO. Interestingly, the WPSPS shifts the energy level of PEDOT:PSS downward, making it more aligned with the perovskite. This alignment enhances the efficiency of charge carrier transport. As the result, tin perovskite film quality is significantly improved,achieving a maximum power conversion efficiency approaching 12% with only an 8.3% efficiency loss after 1700 h of stability tests, which compares well with the state-of-the-art stability of tin-based perovskite solar cells.展开更多
The aim of this work is to inventory and study the lignicolous parasitic macrofungi of the Tin plant formation. The mycological outings from July to September 2018 and 2019, collected forty-four (44) basidiomes throug...The aim of this work is to inventory and study the lignicolous parasitic macrofungi of the Tin plant formation. The mycological outings from July to September 2018 and 2019, collected forty-four (44) basidiomes through a random sampling device over an area of 40,000 m2 including 1000 m long by 40 m2 wide. The standard methods and techniques used in mycology for taxonomic studies were used to describe and classify the carpophores collected in three families: Hymenochaetaceae, Ganodermataceae and Polyporaceae, into eight genera: Onnia (4.55%), Amauroderma (4.55%), Ganoderma (20.45%), Phellinus (52.27%), Inonotus (4.55%), Phellinopsis (6.82%), Grammothele (2.27%) and Trametes (4.55%). The genera Phellinus and Ganoderma were the most abundant. Finally, eight species were identified: Inonotus cf. ochroporus, Inonotus cf. pachyphloeus, Phellinus cf. cryptarum, Phellinus cf. hartigii, Phellinus cf. hippophaecola;Phellinus cf. robustus, Phellinus cf. igniarius, et Amauroderma cf. fasciculatum. Seven fungal species belong to the family Hymenochaetaceae and only the species Amauroderma cf. fasciculatum is a Ganodermataceae. However, all these fungal species are shown to be parasites of trunks and/or branches of the following woody: Parkia biglobosa (50%), Anogeissus leiocarpus (25%), Annona senegalensis (12.5%) and Mangifera indica (12.5%). Authors attest that the presence of phytoparasitic polypores in a plant formation is an indicator of aging hence the urgency to put in place the appropriate measures to safeguard and restore Tin’s plant formation.展开更多
The aim of this study of the spatial dispersion of tin, niobium and tantalum mineralization associated with the Mayo Darlé granitoids was to produce prospecting guides through predictive maps of Sn, Nb and Ta in ...The aim of this study of the spatial dispersion of tin, niobium and tantalum mineralization associated with the Mayo Darlé granitoids was to produce prospecting guides through predictive maps of Sn, Nb and Ta in the region. It was based on a database (in appendix) obtained after analysis of rock samples (greisens and quartz veins) collected in the field, using a portable X-ray fluorescence (XRF) spectrometer. Two approaches were used: 1) structural studies in the field using the directions of veins and fractures 2) the use of variographic maps, an essential element in geostatistics for determining directional anisotropies. A joint synthesis of the modelling results shows that tin, tantalum and niobium mineralization at Mayo Darlé is concentrated along strike intervals N315E to N320E, with mineralization also occurring along strike N35E for high-grade Sn, medium-grade Ta and low-grade Nb. In short, mineral concentrations disperse progressively in space: positively from east to west for tantalum and niobium, and inversely for tin.展开更多
Perovskites are a category of materials with a unique crystal structure that allows them to absorb sunlight efficiently. This efficiency is particularly high in the case of CH<sub>3</sub>NH<sub>3<...Perovskites are a category of materials with a unique crystal structure that allows them to absorb sunlight efficiently. This efficiency is particularly high in the case of CH<sub>3</sub>NH<sub>3</sub>Pb<sub>1-x</sub>Sn<sub>x</sub>I<sub>3</sub> mixed perovskites. The combination of lead (Pb) and tin (Sn) in this matrix provides a broad spectrum of sunlight absorption, enabling the generation of a larger voltage and, subsequently, increased power. The primary objective in solar cell development is to maximize the conversion of sunlight into electricity. Mixed perovskites like CH<sub>3</sub>NH<sub>3</sub>Pb<sub>1-x</sub>Sn<sub>x</sub>I<sub>3</sub> have demonstrated significant potential in this regard. Their tunable bandgap, courtesy of varying the Pb: Sn ratio, allows for the optimization of sunlight absorption. The result is solar cells that surpass many conventional counterparts in terms of energy efficiency. Another significant advantage of these mixed perovskite solar cells is their cost-effectiveness. They can be manufactured using solution-based processes, which are less expensive than the high-vacuum methods required for traditional silicon solar cells. While the prospects for mixed perovskite solar cells are undeniably promising, there are concerns about the toxicity of lead, a key component of these cells. Lead is known to have harmful effects on the environment and health. The aim of our work is to reduce or eliminate lead toxicity in the perovskite cell while maintaining its efficiency. Thus, in a theoretical and experimental approach, we obtained following efficiencies of samples: CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> (22.49%) CH<sub>3</sub>NH<sub>3</sub>Pb<sub>0.75</sub>Sn<sub>0.25</sub>I<sub>3</sub> (22.72%), CH<sub>3</sub>NH<sub>3</sub>Pb<sub>0.5</sub>Sn<sub>0.5</sub>I<sub>3</sub> (23.00%) CH<sub>3</sub>NH<sub>3</sub>Pb<sub>0.25</sub>Sn<sub>0.75</sub>I<sub>3</sub> (22.61%), CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> (22.38%). Doping with 50% tin gives the highest result (23.00%). By replacing a fraction of the lead with tin, the research aims to reduce the environmental footprint of the cells while maintaining their high performance. However, the challenge is to achieve a balance that does not compromise performance while reducing toxicity. .展开更多
本研究将17%Ti N增强α-β Si Al ON复合物在传感器辅助的微波加热系统中进行烧结。探索了Ti N的加入对粉状原料介电性能的影响,以及烧结温度对α-β Si Al ON复合物相变、微观结构演变及其机械性能的影响。结果表明Ti N的加入加强了微...本研究将17%Ti N增强α-β Si Al ON复合物在传感器辅助的微波加热系统中进行烧结。探索了Ti N的加入对粉状原料介电性能的影响,以及烧结温度对α-β Si Al ON复合物相变、微观结构演变及其机械性能的影响。结果表明Ti N的加入加强了微波吸热的效能,这在烧结温度峰值上得到了体现。α∶β比值因此降低了,各项机械性能得到了改善,突出表现在复合物断裂韧性的改善方面。另外,本研究列出了针对实验室微波辅助烧结过程的能量消耗估算数据。最终,本研究确定获得最高相对密度(97.1%)、维氏硬度(13.35±0.47 GPa)以及断裂韧性(7.52±0.54 MPa·m^(1/2))的试验条件为1 300℃下烧结30 min。展开更多
文摘The growth of high-quality germanium tin(Ge_(1–y)Sn_(y))binary alloys on a Si substrate using chemical vapor deposition(CVD)techniques holds immense potential for advancing electronics and optoelectronics applications,including the development of efficient and low-cost mid-infrared detectors and light sources.However,achieving precise control over the Sn concentration and strain relaxation of the Ge_(1–y)Sn_(y)epilayer,which directly influence its optical and electrical properties,remain a significant challenge.In this research,the effect of strain relaxation on the growth rate of Ge_(1–y)Sn_(y)epilayers,with Sn concentration>11at.%,is investigated.It is successfully demonstrated that the growth rate slows down by~55%due to strain relaxation after passing its critical thickness,which suggests a reduction in the incorporation of Ge into Ge_(1–y)Sn_(y)growing layers.Despite the increase in Sn concentration as a result of the decrease in the growth rate,it has been found that the Sn incorporation rate into Ge_(1–y)Sn_(y)growing layers has also decreased due to strain relaxation.Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge_(1–y)Sn_(y)epilayers with tuned Sn concentration and strain relaxation.
基金National Natural Science Foundation of China (62274094, 62175117)Natural Science Foundation of Jiangsu Higher Education Institutions (22KJB510011)+1 种基金Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University (KJS2260)Huali Talents Program of Nanjing University of Posts and Telecommunications。
文摘Buried interfacial voids have always been a notorious phenomenon observed in the fabrication of lead perovskite films. The existence of interfacial voids at the buried interface will capture the carrier, suppress carrier transport efficiencies, and affect the stability of photovoltaic devices. However, the impact of these buried interfacial voids on tin perovskites, a promising avenue for advancing lead-free photovoltaics, has been largely overlooked. Here, we utilize an innovative weakly polar solvent pretreatment strategy(WPSPS) to mitigate buried interfacial voids of tin perovskites. Our investigation reveals the presence of numerous voids in tin perovskites during annealing, attributed to trapped dimethyl sulfoxide(DMSO) used in film formation. The WPSPS method facilitates accelerated DMSO evaporation, effectively reducing residual DMSO. Interestingly, the WPSPS shifts the energy level of PEDOT:PSS downward, making it more aligned with the perovskite. This alignment enhances the efficiency of charge carrier transport. As the result, tin perovskite film quality is significantly improved,achieving a maximum power conversion efficiency approaching 12% with only an 8.3% efficiency loss after 1700 h of stability tests, which compares well with the state-of-the-art stability of tin-based perovskite solar cells.
文摘The aim of this work is to inventory and study the lignicolous parasitic macrofungi of the Tin plant formation. The mycological outings from July to September 2018 and 2019, collected forty-four (44) basidiomes through a random sampling device over an area of 40,000 m2 including 1000 m long by 40 m2 wide. The standard methods and techniques used in mycology for taxonomic studies were used to describe and classify the carpophores collected in three families: Hymenochaetaceae, Ganodermataceae and Polyporaceae, into eight genera: Onnia (4.55%), Amauroderma (4.55%), Ganoderma (20.45%), Phellinus (52.27%), Inonotus (4.55%), Phellinopsis (6.82%), Grammothele (2.27%) and Trametes (4.55%). The genera Phellinus and Ganoderma were the most abundant. Finally, eight species were identified: Inonotus cf. ochroporus, Inonotus cf. pachyphloeus, Phellinus cf. cryptarum, Phellinus cf. hartigii, Phellinus cf. hippophaecola;Phellinus cf. robustus, Phellinus cf. igniarius, et Amauroderma cf. fasciculatum. Seven fungal species belong to the family Hymenochaetaceae and only the species Amauroderma cf. fasciculatum is a Ganodermataceae. However, all these fungal species are shown to be parasites of trunks and/or branches of the following woody: Parkia biglobosa (50%), Anogeissus leiocarpus (25%), Annona senegalensis (12.5%) and Mangifera indica (12.5%). Authors attest that the presence of phytoparasitic polypores in a plant formation is an indicator of aging hence the urgency to put in place the appropriate measures to safeguard and restore Tin’s plant formation.
文摘The aim of this study of the spatial dispersion of tin, niobium and tantalum mineralization associated with the Mayo Darlé granitoids was to produce prospecting guides through predictive maps of Sn, Nb and Ta in the region. It was based on a database (in appendix) obtained after analysis of rock samples (greisens and quartz veins) collected in the field, using a portable X-ray fluorescence (XRF) spectrometer. Two approaches were used: 1) structural studies in the field using the directions of veins and fractures 2) the use of variographic maps, an essential element in geostatistics for determining directional anisotropies. A joint synthesis of the modelling results shows that tin, tantalum and niobium mineralization at Mayo Darlé is concentrated along strike intervals N315E to N320E, with mineralization also occurring along strike N35E for high-grade Sn, medium-grade Ta and low-grade Nb. In short, mineral concentrations disperse progressively in space: positively from east to west for tantalum and niobium, and inversely for tin.
文摘Perovskites are a category of materials with a unique crystal structure that allows them to absorb sunlight efficiently. This efficiency is particularly high in the case of CH<sub>3</sub>NH<sub>3</sub>Pb<sub>1-x</sub>Sn<sub>x</sub>I<sub>3</sub> mixed perovskites. The combination of lead (Pb) and tin (Sn) in this matrix provides a broad spectrum of sunlight absorption, enabling the generation of a larger voltage and, subsequently, increased power. The primary objective in solar cell development is to maximize the conversion of sunlight into electricity. Mixed perovskites like CH<sub>3</sub>NH<sub>3</sub>Pb<sub>1-x</sub>Sn<sub>x</sub>I<sub>3</sub> have demonstrated significant potential in this regard. Their tunable bandgap, courtesy of varying the Pb: Sn ratio, allows for the optimization of sunlight absorption. The result is solar cells that surpass many conventional counterparts in terms of energy efficiency. Another significant advantage of these mixed perovskite solar cells is their cost-effectiveness. They can be manufactured using solution-based processes, which are less expensive than the high-vacuum methods required for traditional silicon solar cells. While the prospects for mixed perovskite solar cells are undeniably promising, there are concerns about the toxicity of lead, a key component of these cells. Lead is known to have harmful effects on the environment and health. The aim of our work is to reduce or eliminate lead toxicity in the perovskite cell while maintaining its efficiency. Thus, in a theoretical and experimental approach, we obtained following efficiencies of samples: CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> (22.49%) CH<sub>3</sub>NH<sub>3</sub>Pb<sub>0.75</sub>Sn<sub>0.25</sub>I<sub>3</sub> (22.72%), CH<sub>3</sub>NH<sub>3</sub>Pb<sub>0.5</sub>Sn<sub>0.5</sub>I<sub>3</sub> (23.00%) CH<sub>3</sub>NH<sub>3</sub>Pb<sub>0.25</sub>Sn<sub>0.75</sub>I<sub>3</sub> (22.61%), CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub> (22.38%). Doping with 50% tin gives the highest result (23.00%). By replacing a fraction of the lead with tin, the research aims to reduce the environmental footprint of the cells while maintaining their high performance. However, the challenge is to achieve a balance that does not compromise performance while reducing toxicity. .
文摘本研究将17%Ti N增强α-β Si Al ON复合物在传感器辅助的微波加热系统中进行烧结。探索了Ti N的加入对粉状原料介电性能的影响,以及烧结温度对α-β Si Al ON复合物相变、微观结构演变及其机械性能的影响。结果表明Ti N的加入加强了微波吸热的效能,这在烧结温度峰值上得到了体现。α∶β比值因此降低了,各项机械性能得到了改善,突出表现在复合物断裂韧性的改善方面。另外,本研究列出了针对实验室微波辅助烧结过程的能量消耗估算数据。最终,本研究确定获得最高相对密度(97.1%)、维氏硬度(13.35±0.47 GPa)以及断裂韧性(7.52±0.54 MPa·m^(1/2))的试验条件为1 300℃下烧结30 min。
