A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of dis...A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.展开更多
A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves t...A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space.Using a small size of the round-ball tool takes less time for the same amount of In2O3 SnO 2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power.A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate.A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece.Through the ultra-precise etching of In2O 3 SnO2,the optoelectronic semiconductor industry can effectively reuse the defective products,reducing production costs.This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3 SnO2 nanostructures.展开更多
By combination of DC reactive magnetron sputter i ng with multiple arcplating, the alternating C 3 N 4 /TiN compo und film is deposited onto HSS. The core level binding energy and the contents o f carbon and n...By combination of DC reactive magnetron sputter i ng with multiple arcplating, the alternating C 3 N 4 /TiN compo und film is deposited onto HSS. The core level binding energy and the contents o f carbon and nitrogen are characterized by X\|ray photoelectron spectrum. X\|ray diffraction(XRD) shows that compound thin film contains hard crystalline phases of α \|C 3 N 4 and β \|C 3 N 4 . The Knoop microhardne ss in the load range of 50.5\|54.1 GPa is measured. According to acoustic emissi on scratch test, the critical load values for the coatings on HSS substrates are in the range of 40\|80 N. The metal coated with C 3 N 4 /TiN compound f ilms has a great improvement in the resistance against corrosion. Many tests sho w that such a coating has a very high wearability. Compared with the uncoated an d TiN coated tools, the C 3 N 4 /TiN coated tools have a much longer cut ting life.展开更多
基金supported by BEN TEN THECO.,and National Science Council,under contract 96-2622-E-152-001-CC397-2410-H-152-016
文摘A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.
基金Project(100-2221-E-152-003)supported by National Science Council
文摘A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space.Using a small size of the round-ball tool takes less time for the same amount of In2O3 SnO 2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power.A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate.A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece.Through the ultra-precise etching of In2O 3 SnO2,the optoelectronic semiconductor industry can effectively reuse the defective products,reducing production costs.This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3 SnO2 nanostructures.
文摘By combination of DC reactive magnetron sputter i ng with multiple arcplating, the alternating C 3 N 4 /TiN compo und film is deposited onto HSS. The core level binding energy and the contents o f carbon and nitrogen are characterized by X\|ray photoelectron spectrum. X\|ray diffraction(XRD) shows that compound thin film contains hard crystalline phases of α \|C 3 N 4 and β \|C 3 N 4 . The Knoop microhardne ss in the load range of 50.5\|54.1 GPa is measured. According to acoustic emissi on scratch test, the critical load values for the coatings on HSS substrates are in the range of 40\|80 N. The metal coated with C 3 N 4 /TiN compound f ilms has a great improvement in the resistance against corrosion. Many tests sho w that such a coating has a very high wearability. Compared with the uncoated an d TiN coated tools, the C 3 N 4 /TiN coated tools have a much longer cut ting life.
