In this work, the total ionizing dose（TID） effect on 130 nm partially depleted（PD） silicon-on-insulator（SOI） static random access memory（SRAM） cell stability is measured. The SRAM cell test structure allowing ...In this work, the total ionizing dose（TID） effect on 130 nm partially depleted（PD） silicon-on-insulator（SOI） static random access memory（SRAM） cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin（SNM） is specifically designed and irradiated by gamma-ray. Both data sides＇ SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side＇s SNM is decreased and the other data side＇s SNM is increased. Moreover, measurement of SNM under different supply voltages（Vdd） reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention Vddshould be tested, because Vddof SRAM cell under data retention mode is lower than normal Vdd.The mechanism under the above results is analyzed by measurement of I–V characteristics of SRAM cell transistors.展开更多
该文提出了配电系统安全域(distribution system security region,DSSR)体积的概念与算法,分析了DSSR体积对电网的意义。首先,对DSSR体积进行了定义,DSSR描述了配电系统满足N-1安全的运行范围,体积是DSSR大小的度量。其次,提出了DSSR高...该文提出了配电系统安全域(distribution system security region,DSSR)体积的概念与算法,分析了DSSR体积对电网的意义。首先,对DSSR体积进行了定义,DSSR描述了配电系统满足N-1安全的运行范围,体积是DSSR大小的度量。其次,提出了DSSR高效运行区的体积定义。再次,提出了基于蒙特卡罗仿真的DSSR体积算法。最后,通过算例验证了体积算法,并进一步研究了体积的用途。DSSR体积能提供一些最大供电能力(total supply capacity,TSC)无法给出的重要信息,选取TSC相同但DSSR体积不同的电网比较,发现体积大的电网具有更好的安全性能,在各个负荷增长方向上的安全裕量更均衡。该文提出的DSSR体积是反映配电网安全性能的新指标,对未来配电网的规划和运行具有重要的应用价值。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261 and 11605282)the Opening Fund of Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences Research Projects(Grant No.KLSDTJJ2016-07)
文摘In this work, the total ionizing dose（TID） effect on 130 nm partially depleted（PD） silicon-on-insulator（SOI） static random access memory（SRAM） cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin（SNM） is specifically designed and irradiated by gamma-ray. Both data sides＇ SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side＇s SNM is decreased and the other data side＇s SNM is increased. Moreover, measurement of SNM under different supply voltages（Vdd） reveals that SNM is more sensitive to TID under lower Vdd. The impact of TID on SNM under data retention Vddshould be tested, because Vddof SRAM cell under data retention mode is lower than normal Vdd.The mechanism under the above results is analyzed by measurement of I–V characteristics of SRAM cell transistors.
