This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, know...This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.展开更多
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.
