The diode infrared focal plane array uses the silicon diodes as a sensitive device for infrared signal measurement. By the infrared radiation, the infrared focal plane can produces small voltage signals. For the tradi...The diode infrared focal plane array uses the silicon diodes as a sensitive device for infrared signal measurement. By the infrared radiation, the infrared focal plane can produces small voltage signals. For the traditional readout circuit structures are designed to process current signals, they cannot be applied to it. In this paper, a new readout circuit for the diode un-cooled infrared focal plane array is developed. The principle of detector array signal readout and small signal amplification is given in detail. The readout circuit is designed and simulated by using the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 μm complementary metal-oxide-semiconductor transistor （CMOS） technology library. Cadence Spectre simulation results show that the scheme can be applied to the CMOS readout integrated circuit （ROIC） with a larger array, such as 320×240 size array.展开更多
Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a portable and noninvasive tool for monitoring of blood oxygenation. In this paper we have introduced a new miniaturized photodetector ...Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a portable and noninvasive tool for monitoring of blood oxygenation. In this paper we have introduced a new miniaturized photodetector front-end on achip to be applied in a portable fNIRS system. It includes silicon avalanche photodiodes (SiAPD), Transimpedance amplifier (TIA) front-end and Quench-Reset circuitry to operate in both linear and Geiger modes. So it can be applied for both continuous-wave fNIRS (CW-fNIRS) and also single-photon counting. Proposed SiAPD exhibits high-avalanche gain (>100), low-breakdown voltage ( V) and high photon detection efficiency accompanying with low dark count rates. The proposed TIA front-end offer a low power consumption ( mW), high-transimpedance gain (up to 250 MV/A), tunable bandwidth (1 kHz - 1 GHz) and very low input and output noise (~few fA/√Hz and few μV/√Hz). The Geiger-mode photon counting front-end also exhibits a controllable hold-off and rest time with an ultra fast quench-reset time (few ns). This integrated system has been implemented using submicron (0.35 μm) standard CMOS technology.展开更多
基金supported by the Fundamental Research Funds for the Central Universities under Grant No. 2009JBM001
文摘The diode infrared focal plane array uses the silicon diodes as a sensitive device for infrared signal measurement. By the infrared radiation, the infrared focal plane can produces small voltage signals. For the traditional readout circuit structures are designed to process current signals, they cannot be applied to it. In this paper, a new readout circuit for the diode un-cooled infrared focal plane array is developed. The principle of detector array signal readout and small signal amplification is given in detail. The readout circuit is designed and simulated by using the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 μm complementary metal-oxide-semiconductor transistor （CMOS） technology library. Cadence Spectre simulation results show that the scheme can be applied to the CMOS readout integrated circuit （ROIC） with a larger array, such as 320×240 size array.
文摘Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a portable and noninvasive tool for monitoring of blood oxygenation. In this paper we have introduced a new miniaturized photodetector front-end on achip to be applied in a portable fNIRS system. It includes silicon avalanche photodiodes (SiAPD), Transimpedance amplifier (TIA) front-end and Quench-Reset circuitry to operate in both linear and Geiger modes. So it can be applied for both continuous-wave fNIRS (CW-fNIRS) and also single-photon counting. Proposed SiAPD exhibits high-avalanche gain (>100), low-breakdown voltage ( V) and high photon detection efficiency accompanying with low dark count rates. The proposed TIA front-end offer a low power consumption ( mW), high-transimpedance gain (up to 250 MV/A), tunable bandwidth (1 kHz - 1 GHz) and very low input and output noise (~few fA/√Hz and few μV/√Hz). The Geiger-mode photon counting front-end also exhibits a controllable hold-off and rest time with an ultra fast quench-reset time (few ns). This integrated system has been implemented using submicron (0.35 μm) standard CMOS technology.
