Investigation on microprocessor based waveform control of short circuit transfer CO_2 welding

A new kind of simple and flexible CO2 welding system was developed to carry out waveform control. The system consisted of IGBT inverter, PWM circuit and microprocessor unit （ MPU） , in which the output current of constant current （CC） power supply could be changed according to transient physical state, and the variable down slope rate control could be used to ensure a stable welding process. The welding experiment results proved the effectiveness of this control approach.

Determining the feature values of parameters indicating the critical states of molten metal bridge in short circuit transfer

Short circuit transfer involves bridging between the consumable electrode and the weld pool, associated with variations of electrical parameters which characterize the change of molten metal bridge state and are very important for the control of .spatter. In this paper, electrical process parameters and short circuit transfer images were simultaneously recorded with a LabView-based synchronous sensing and visualizing system. The arc^bridge resistance and derivatives of welding current, arc voltage and arc resistance at various instants were calculated by means of offline analysis of the welding current, arc voltage and droplet images. Parameters and their feature values indicating the onset of short circuit and the oncoming necking-down of molten metal bridge were determined. Using the calculated feature values, bridge-state-feedback control for .short circuit transfer was realized with a spatter rate less than 0. 25%.

Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Integrated Circuits at 130 nm Technology Node

A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.

Appearance and characteristics of non explosive short circuit transfer using basic electrodes

By means of high-speed photograph and synchronous oscillograph, the appearance and technical features of non-explosive short circuiting transfer using basic electrodes are investigated, and the conditions to form this metal transfer mode are discussed. It is shown that the metal transfer mode has its high frequency of droplet, short period of arc extinguishing and long arc igniting period. This metal transfer mode is expected for basic electrodes for its less spatter and higher deposition efficiency.

A new simulation model and its application in CO_2 short-circuiting transfer welding

A new simulation model of CO 2 short circuiting transfer welding may be employed to develop a new pattern of welding machine and to predict welding process parameters to obtain the optimum welding technology properties. In this paper, a new simulating model is developed according to the AWP (adapting welding physics process) waveform control method. Good agreement is shown between the predicted and experimentally determined results. The model will make an important promotion in the development of CO 2 arc welding technique.

A 27-mW 10-bit 125-MSPS charge domain pipelined ADC with a PVT insensitive boosted charge transfer circuit

A low power 10-bit 125-MSPS charge-domain(CD) pipelined analog-to-digital converter(ADC) based on MOS bucket-brigade devices(BBDs) is presented.A PVT insensitive boosted charge transfer(BCT) that is able to reject the charge error induced by PVT variations is proposed.With the proposed BCT,the common mode charge control circuit can be eliminated in the CD pipelined ADC and the system complexity is reduced remarkably.The prototype ADC based on the proposed BCT is realized in a 0.18μm CMOS process,with power consumption of only 27 mW at 1.8-V supply and active die area of 1.04 mm^2.The prototype ADC achieves a spurious free dynamic range(SFDR) of 67.7 dB,a signal-to-noise ratio(SNDR) of 57.3 dB,and an effective number of bits(ENOB) of 9.0 for a 3.79 MHz input at full sampling rate.The measured differential nonlinearity(DNL) and integral nonlinearity (INL) are +0.5/-0.3 LSB and +0.7/-0.55 LSB,respectively.

A 10-bit 250 MSPS charge-domain pipelined ADC with replica controlled PVT insensitive BCT circuit

A low power 10-bit 250 MSPS charge-domain （CD） pipelined analog-to-digital converter （ADC） is introduced. The ADC is implemented in MOS bucket-brigade devices （BBDs） based CD pipelined architecture. A replica controlled boosted charge transfer （BCT） circuit is introduced to reject the influence of PVT variations on the charge transfer process. Based on replica controlled BCT, the CD pipelined ADC is designed and realized in a 1P6M 0.18μm CMOS process. The ADC achieves an SFDR of 64.4 dB, an SNDR of 56.9 dB and an ENOB of 9.2 for a 9.9 MHz input; and an SFDR of 63.1 dB, an SNR of 55.2 dB, an SNDR of 54.5 dB and an ENOB of 8.7 for a 220.5 MHz input at full sampling rate. The DNL is ＋0.5/- 0.55 LSB and INL is ＋0.8/- 0.85 LSB. The power consumption of the prototype ADC is only 45 mW at 1.8 V supply and it occupies an active die area of 1.56 mm2.