Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs

An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors（a-IGZO TFTs）with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance（C_（TI）/C_（BI））.Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.

Synthetic plasma and silicon tubular harness-based purebiological transistor amplifier circuit

Dear Editor:Kosta et al.;first ever reported the development of biologic electronic components viz resistance R,capacitance C,diode D and transistor T using human tissues and human skin.In our early study;,we have demonstrated the feasibility of liquid medium（synthetic blood plasma）to develop bio-transistor,bio-resistor,and bio-capacitor and combined them to form an amplifier using the metallic harness(the interconnecting

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

In this paper,ground-signal-ground type through-silicon vias（TSVs） exploiting air gaps as insulation layers are designed,analyzed and simulated for applications in millimeter wave.The compact wideband equivalent-circuit model and passive elements（RLGC） parameters based on the physical parameters are presented with the frequency up to 100 GHz.The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm.Therefore,the applied voltage of TSVs only needs to achieve the flatband voltage,and there is no need to indicate the threshold voltage.This is due to the small permittivity of air gaps.The proposed model shows good agreement with the simulation results of ADS and Ansoft＇s HFSS over a wide frequency range.

Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout

In this paper, we present an improved high-frequency equivalent circuit for SiGe heterojunction bipolar transistors（HBTs） with a CBE layout, where we consider the distributed effects along the base region. The actual device structure is divided into three parts： a link base region under a spacer oxide, an intrinsic transistor region under the emitter window,and an extrinsic base region. Each region is considered as a two-port network, and is composed of a distributed resistance and capacitance. We solve the admittance parameters by solving the transmission-line equation. Then, we obtain the smallsignal equivalent circuit depending on the reasonable approximations. Unlike previous compact models, in our proposed model, we introduce an additional internal base node, and the intrinsic base resistance is shifted into this internal base node,which can theoretically explain the anomalous change in the intrinsic bias-dependent collector resistance in the conventional compact model.