Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fine...Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fineness microcavity,a new proposal is put forward which contains a single two-level atom asymmetrically coupled with two nanowires. Singleemitter manipulation of photonic signals for bilateral coherent incident is clear now, since we specify atomic saturation nonlinearity into three contributions which brings us a new approach to realizing light-controlled-light at weak light and single-atom levels. An efficient optically controllable switch based on self-matching-induced-block and a concise optical transistor are proposed. Our findings show potential applications in full-optical devices.展开更多
In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire syste...In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.展开更多
In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor （MISFET）. An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET featu...In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor （MISFET）. An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self- protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias （〉 70 V/μm） and suppress the leakage current （〈 5 × 10-11 A/mm）. Compared with conventional monolithic integration, the numerical results show that the MISET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.展开更多
Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on...Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on the quasi transient state of the rotor rectifying circuit is made, and a nonlinear mapping between the equivalent resistance and the duty cycle is deduced. Furthermore, the method for determining the magnitude of the external resistor is introduced.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11864018 and 11574229)the Scientific Research Foundation of Education Department of Jiangxi Province,China(Grant No.GJJ170645)the Doctor Startup Fund of the Natural Science of Jinggangshan University,China(Grant No.JZB16003)
文摘Atom–nanowire coupling system is a promising platform for optical quantum information processing. Unlike the previous designing of optical switch and transistor requiring a dedicated multi-level emitter and high fineness microcavity,a new proposal is put forward which contains a single two-level atom asymmetrically coupled with two nanowires. Singleemitter manipulation of photonic signals for bilateral coherent incident is clear now, since we specify atomic saturation nonlinearity into three contributions which brings us a new approach to realizing light-controlled-light at weak light and single-atom levels. An efficient optically controllable switch based on self-matching-induced-block and a concise optical transistor are proposed. Our findings show potential applications in full-optical devices.
基金Supported in part by the Third World Academy of Sciences, in part by the Institute of Modern Physics, Chinese Academy of Sciencesin part by the National Natural Science Foundation of China (10675153)
文摘In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60906037)the Fundamental Research Funds for the Central Universities,China (Grant No. ZYGX2009J027)the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices
文摘In this paper, we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor （MISFET）. An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a self- protected function for a reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block a reverse bias （〉 70 V/μm） and suppress the leakage current （〈 5 × 10-11 A/mm）. Compared with conventional monolithic integration, the numerical results show that the MISET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.
文摘Rotor chopper control is a simple and effective drive method for induction motor. This paper presents a novel IGBT chopper topology,which can both adjust rotor resistance and protect IGBT efficiently. Investigation on the quasi transient state of the rotor rectifying circuit is made, and a nonlinear mapping between the equivalent resistance and the duty cycle is deduced. Furthermore, the method for determining the magnitude of the external resistor is introduced.
