The aim of the paper is to get an insight into the time interval of electron emission done between two neighbouring energy levels of the hydrogen atom. To this purpose, in the first step, the formulae of the special r...The aim of the paper is to get an insight into the time interval of electron emission done between two neighbouring energy levels of the hydrogen atom. To this purpose, in the first step, the formulae of the special relativity are applied to demonstrate the conditions which can annihilate the electrostatic force acting between the nucleus and electron in the atom. This result is obtained when a suitable electron speed entering the Lorentz transformation is combined with the strength of the magnetic field acting normally to the electron orbit in the atom. In the next step, the Maxwell equation characterizing the electromotive force is applied to calculate the time interval connected with the change of the magnetic field necessary to produce the force. It is shown that the time interval obtained from the Maxwell equation, multiplied by the energy change of two neighbouring energy levels considered in the atom, does satisfy the Joule-Lenz formula associated with the quantum electron energy emission rate between the levels.展开更多
The transition among multiple charging states of a semiconductor＇s localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level （TGFEL） is proposed....The transition among multiple charging states of a semiconductor＇s localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level （TGFEL） is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace acti- vation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unre- solved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.展开更多
The low-lying states of 200-205Hg nuclei have been studied by using the nucleon pair approximation (NPA) of the shell model. We calculate low-excited energy levels, electric quadrupole moments, and magnetic dipole mom...The low-lying states of 200-205Hg nuclei have been studied by using the nucleon pair approximation (NPA) of the shell model. We calculate low-excited energy levels, electric quadrupole moments, and magnetic dipole moments, and investigate dominant configurations of low-lying states in the nucleon pair basis. Our calculations reasonably reproduce the available experimental data. We also tabulate our predicted results of low-lying states, including excitation energies, electric quadrupole moments and magnetic moments.展开更多
文摘The aim of the paper is to get an insight into the time interval of electron emission done between two neighbouring energy levels of the hydrogen atom. To this purpose, in the first step, the formulae of the special relativity are applied to demonstrate the conditions which can annihilate the electrostatic force acting between the nucleus and electron in the atom. This result is obtained when a suitable electron speed entering the Lorentz transformation is combined with the strength of the magnetic field acting normally to the electron orbit in the atom. In the next step, the Maxwell equation characterizing the electromotive force is applied to calculate the time interval connected with the change of the magnetic field necessary to produce the force. It is shown that the time interval obtained from the Maxwell equation, multiplied by the energy change of two neighbouring energy levels considered in the atom, does satisfy the Joule-Lenz formula associated with the quantum electron energy emission rate between the levels.
基金support from CNBM (China National Building Materials) Group for its partial financial support of the work
文摘The transition among multiple charging states of a semiconductor＇s localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level （TGFEL） is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace acti- vation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unre- solved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.
基金supported by the Science & Technology Program of Shanghai Maritime University (Grant No. 20100086)
文摘The low-lying states of 200-205Hg nuclei have been studied by using the nucleon pair approximation (NPA) of the shell model. We calculate low-excited energy levels, electric quadrupole moments, and magnetic dipole moments, and investigate dominant configurations of low-lying states in the nucleon pair basis. Our calculations reasonably reproduce the available experimental data. We also tabulate our predicted results of low-lying states, including excitation energies, electric quadrupole moments and magnetic moments.
