Ⅱ-Ⅵ族材料在叠层太阳能电池中的应用

Ⅱ-Ⅵ族材料ZnSe、CdSe、ZnTe、CdTe等具有禁带宽度大,少子寿命对位错不敏感等优点,可以作为一种新的材料体系应用于叠层太阳能电池中。此类材料既能够与铜铟镓硒电池、Ⅲ-Ⅴ族材料、单晶Si等相结合,也可将不同的Ⅱ-Ⅵ族材料相结合制备多结电池。本文介绍了上述几种思路的理论及实验研究现状,以及Ⅱ-Ⅵ族材料顶电池的研究进展;同时分析了阻碍Ⅱ-Ⅵ族半导体材料应用的单极性掺杂问题,介绍了提高掺杂水平可能的途径。

Structural, Optical and Electrical Properties of Li-doped ZnO Thin Films Influenced by Annealing Temperature

Li-doped ZnO thin films had been grown by radio frequency magnetron sputtering and then annealed under various annealing temperatures. The characteristics of ZnO films were examined by XRD, FESEM, Hall measurement and optical transmission spectra. Results showed that p type conduction was observed in Li doped ZnO films annealed at 500-600 ℃ and thep type ZnO films possessed a good crystalline with c-axis orientation, dense surface, and average transmission of about 85% in visible spectral region.

First-principles study of the band gap tuning and doping control in CdSexTe1-x alloy for high efficiency solar cell

CdTe is one of the leading materials for low cost,high efficiency thin-film solar cells with a nearly ideal band gap of 1.48 eV.However,its solar to electricity power conversion efficiency(PCE)is hindered by the relatively low open circuit voltage(VOC)due to intrinsic defect related issues.Here,we propose that alloying CdTe with CdSe could possibly improve the solar cell performance by reducing the"ideal"band gap of CdTe to gain more short-circuit current from long-wavelength absorption without sacrificing much VOC.Using the hybrid functional calculation,we find that the minimum band gap of the CdTe1-xSex alloy can be reduced from 1.48 eV at x=0 to 1.39 eV at x=0.32,and most of the change come from the lowering of the conduction band minimum.We also show that the formation of the alloy can improve the p-type doping of CuCdimpurity based on the reduced effective formation energy and nearly constant effective transition energy level,thus possibly enhance VOC,thus PCE.

Preparation,Growth Mechanisms and Characterizations of ZnSe Films via the Solvothermal Method

With diethylamine as a solvent, ZnSe films were formed on the Si substrate directly from zinc and selenium through the modified solvothermal method. The effects of holding temperature, deposition time and substrate surface treatment on the quality and morphologies of the ZnSe films were investigated. The growth mechanism of ZnSe films was proved to be a layer-nucleation growth process, which was tied in with the Stranski-Krastanov （SK） model. ZnSe films were identified by the X-ray diffraction pattern （XRD）, the scanning electron microscope （SEM）, the X-ray photoelectron spectroscope （XPS） and the photoluminescence （PL） techniques. The results indicate that the modified solvothermal method with diethylamine as a solvent is suitable to prepare high quality ZnSe films.

Effect of Doping and High-Temperature Annealing on the Structural and Electrical Properties of Zn_(1-X)Ni_XO(0≤X≤0.15) Powders

This paper reported the synthesis, crystal structure and electrical conductivity properties of Ni-doped ZnO powders （i.e. Zn1-xNixO binary system, X=0, 0.0025, 0.005, 0.0075 and in the range 0.01≤X〈0.15）. I- phase samples, which were indexed as single phase with a hexagonal （wurtzite） structure in the Zn1-xNixO binary system, were determined by X-ray diffraction （XRD）. The widest range of the I-phase was determined as 0≤X≤0.03 at 1200℃; above this range the mixed phase was observed. The impurity phase was determined as NiO when compared with standard XRD data, using the PDF program. We focused on single f-phase ZnO samples which were synthesized at 1200℃ because of the widest range of solubility limit at this temperature. It was observed that the lattice parameters a and c of the I-phase decreased with Ni doping concentration. The morphology of the I-phase samples was analyzed with a scanning electron microscope. The electrical conductivity of the pure ZnO and single I-phase samples were studied by using the four-probe dc method at temperatures between 100 and 950℃ in air atmosphere. The electrical conductivity values of pure ZnO and 3 mol% Ni-doped ZnO samples at 100℃C were 2×10^-6 and 4.8×10^-6 Ω-1.cm^-1, and at 950℃ they were 1.8 and 3.6 Ω-1cm-1, respectively. In other words, electrical conductivity increased with Ni doping concentration.

65mJ室温Fe^2＋∶ZnSe中红外激光器

Fe^(2+):ZnSe晶体作为3~5μm波段极具潜力的中红外激光介质之一,在材料特性和转换效率等方面具有明显优势。对Fe^(2+):ZnSe晶体的吸收特性进行了研究,利用自制放电引发的非链式脉冲HF激光抽运Fe^(2+)掺杂浓度为4×1018 cm^(-3)、尺寸为10mm×10mm×5mm的Fe^(2+):ZnSe晶体,在室温下获得了65mJ的高能量Fe^(2+):ZnSe中红外激光输出,光光转换效率为31%,输出激光能量相对于晶体吸收抽运光能量的斜率效率可达37%。