Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less R...Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less RFID tag. The switch utilizes only the transistor width and length(W/L) optimization, proper gate bias resistor and resistive body floating technique and therefore,exhibits 1 d B insertion loss, 31.5 d B isolation and 29.2 d Bm 1-d B compression point(P1d B). Moreover, the switch dissipates only786.7 n W power for 1.8/0 V control voltages and is capable of switching in 794 fs. Above all, as there is no inductor or capacitor used in the circuit, the size of the switch is 0.00208 mm2 only. This switch will be appropriate for reader-less RFID tag transceiver front-end as well as other wireless transceivers operated at 2.4 GHz band.展开更多
基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,...基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。展开更多
基金supported by the research grant Economic Transformation Programme (ETP-2013-037) from Universiti Kebangsaan Malaysia and the Ministry of Science, Technology and Innovation (MOSTI) respectively
文摘Radio frequency identification(RFID) is a ubiquitous identification technology nowadays. An on-chip high-performance transmit/receive(T/R) switch is designed and simulated in 0.13-μm CMOS technology for reader-less RFID tag. The switch utilizes only the transistor width and length(W/L) optimization, proper gate bias resistor and resistive body floating technique and therefore,exhibits 1 d B insertion loss, 31.5 d B isolation and 29.2 d Bm 1-d B compression point(P1d B). Moreover, the switch dissipates only786.7 n W power for 1.8/0 V control voltages and is capable of switching in 794 fs. Above all, as there is no inductor or capacitor used in the circuit, the size of the switch is 0.00208 mm2 only. This switch will be appropriate for reader-less RFID tag transceiver front-end as well as other wireless transceivers operated at 2.4 GHz band.
文摘基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。
