As different power has its own receivers,this paper analyzes and designs a multiple-receiver wireless power transfer(WPT)system systematically.The equivalent circuit model of the system is established to analyze the k...As different power has its own receivers,this paper analyzes and designs a multiple-receiver wireless power transfer(WPT)system systematically.The equivalent circuit model of the system is established to analyze the key parameters including transmitter power,receiver power,transmission efficiency,and each receiver power allocation.A control circuit is proposed to achieve the maximum transmission efficiency and transmitter power control and arbitrary receiver power allocation ratios for different receivers.Through the proposed control circuit,receivers with different loads can allocate appropriate power according to its power demand,the transmitter power and system efficiency do not vary with the change of the number of receivers.Finally,this control circuit is validated using a 130-kHz WPT system with three receivers whose power received is 3:10:12,and the overall system efficiency can reach as high as 55.5%.展开更多
This contribution deals with the outage probability in a hierarchical macrocell/microcell CDMA cellularsystem.We consider different attenuation models and imperfection of power control with log-normal distribution.Bas...This contribution deals with the outage probability in a hierarchical macrocell/microcell CDMA cellularsystem.We consider different attenuation models and imperfection of power control with log-normal distribution.Based on IS-95 protocol, the impacts of imperfect sectorization and imperfection of power control on outageProbability are fully investigated From the numerical results, we conclude that the high user capacity may beexpected in the case of relatively tight power control and narrower overlap betWeen sectors and the hierarchicalmacrocell/microcell cellular systems are potential for the future cellular mobile communication.展开更多
We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power re...We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.展开更多
基金supported by the National Natural Science Foundation of China under Grant No.51574198Nanchong City 2018 Special Fund for City-School Cooperation under Grant No.18SXHZ0021
文摘As different power has its own receivers,this paper analyzes and designs a multiple-receiver wireless power transfer(WPT)system systematically.The equivalent circuit model of the system is established to analyze the key parameters including transmitter power,receiver power,transmission efficiency,and each receiver power allocation.A control circuit is proposed to achieve the maximum transmission efficiency and transmitter power control and arbitrary receiver power allocation ratios for different receivers.Through the proposed control circuit,receivers with different loads can allocate appropriate power according to its power demand,the transmitter power and system efficiency do not vary with the change of the number of receivers.Finally,this control circuit is validated using a 130-kHz WPT system with three receivers whose power received is 3:10:12,and the overall system efficiency can reach as high as 55.5%.
文摘This contribution deals with the outage probability in a hierarchical macrocell/microcell CDMA cellularsystem.We consider different attenuation models and imperfection of power control with log-normal distribution.Based on IS-95 protocol, the impacts of imperfect sectorization and imperfection of power control on outageProbability are fully investigated From the numerical results, we conclude that the high user capacity may beexpected in the case of relatively tight power control and narrower overlap betWeen sectors and the hierarchicalmacrocell/microcell cellular systems are potential for the future cellular mobile communication.
文摘We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.
