High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of a...Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.展开更多
Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between tar...Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.展开更多
Fluorine doped tin oxide, SnO2:F, thin films were deposited by ultrasonic chemical spray starting from tin chloride and hydrofluoric acid. The physical characteristics of the films as a function of both water content ...Fluorine doped tin oxide, SnO2:F, thin films were deposited by ultrasonic chemical spray starting from tin chloride and hydrofluoric acid. The physical characteristics of the films as a function of both water content in the starting solution and substrate temperature were studied. The film structure was polycrystalline in all cases, showing that the intensity of (200) peak increased with the water content in the starting solution. The electrical resistivity decreased with the water content, reaching a minimum value, in the order of 8 × 10-4 Ωcm, for films deposited at 450℃ from a starting solution with a water content of 10 ml per 100 ml of solution;further increase in water content increased the corresponding resistivity. Optical transmittances of SnO2:F films were high, in the order of 75%, and the band gap values oscillated around 3.9 eV. SEM analysis showed uniform surface morphologies with different geometries depending on the deposition conditions. Composition analysis showed a stoichiometric compound with a [Sn/O] ratio around 1:2 in all samples. The presence of F into the SnO2 lattice was detected, within 2 at % respect to Sn.展开更多
The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- ...The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction （XRD） technique and solubility of In3＋ and Ga3＋ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3＋ and Ga3＋ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate.展开更多
Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol t...Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol terephthalate, PET） by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction （XRD） and scanning electron microscopy （SEM） revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/（V·s） and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.展开更多
In this work,uniform reduced graphene oxide（RGO） films were formed on poly-（ethylene terephthalate）（PET） substrates using a simple drop-casting method.We investigated four types of substrates：unmodified PET,pol...In this work,uniform reduced graphene oxide（RGO） films were formed on poly-（ethylene terephthalate）（PET） substrates using a simple drop-casting method.We investigated four types of substrates：unmodified PET,polydopamine-coated PET.carboxyl-group-modified PET,and alkyl-group-modified PET.Upon water evaporation,the surface of the polydopamine-modified PET substrates can interact with the reduced graphene oxide sheets to form flattened and continuous RGO films,which exhibit a sheet resistance of 21.75 kΩ/sq at 82% transmittance.The result indicates that the properties of the surface groups determined whether uniform and flattened RGO films could be formed on the substrates.Hence,we proposed a simple and effective way to produce transparent and conductive films in which the catechol unit exhibits a great effect on the deposition of uniform RGO films on PET substrates.展开更多
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.
文摘Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.
基金This work was partially supported by CONACyT under contract Number 166601.
文摘Fluorine doped tin oxide, SnO2:F, thin films were deposited by ultrasonic chemical spray starting from tin chloride and hydrofluoric acid. The physical characteristics of the films as a function of both water content in the starting solution and substrate temperature were studied. The film structure was polycrystalline in all cases, showing that the intensity of (200) peak increased with the water content in the starting solution. The electrical resistivity decreased with the water content, reaching a minimum value, in the order of 8 × 10-4 Ωcm, for films deposited at 450℃ from a starting solution with a water content of 10 ml per 100 ml of solution;further increase in water content increased the corresponding resistivity. Optical transmittances of SnO2:F films were high, in the order of 75%, and the band gap values oscillated around 3.9 eV. SEM analysis showed uniform surface morphologies with different geometries depending on the deposition conditions. Composition analysis showed a stoichiometric compound with a [Sn/O] ratio around 1:2 in all samples. The presence of F into the SnO2 lattice was detected, within 2 at % respect to Sn.
文摘The increasing demand in the diverse device applications of transparent conducting oxides （TCOs） requires synthesis of new TCOs of n- or p-type conductivity. This article is about materials engineering of ZnO-SnO2- In2O3-Ga2O3 to synthesize powders of the quaternary compound Zn2-xSn1-xlnxGaxO4-δ in the stoichiometry of x = 0.2, 0.3, and 0.4 by solid state reaction at 1275℃. Lattice parameters were determined by X-ray diffraction （XRD） technique and solubility of In3＋ and Ga3＋ in spinel Zn2SnO4 was found at 1275℃. The solubility limit of In3＋ and Ga3＋ in Zn2SnO4 is found at below x = 0.4. The optical transmittance approximated by the UV-Vis reflectance spectra showed excellent characteristics while optical band gap was consistent across 3.2 eV with slight decrease along increasing x value. Carrier mobility of the species was considerably higher than the older versions of zinc stannate spinel co-substitutions whereas the carrier concentrations were moderate.
文摘Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol terephthalate, PET） by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction （XRD） and scanning electron microscopy （SEM） revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/（V·s） and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.
基金supported by the National Basic Research Program of China(973 Program)with no.2011CB706900the National Nature Science Foundation of China(nos.50872149 and 50502003)+1 种基金the Scientific Research Foundation for Returned Scholars within the Ministry of Education of Chinathe Presidential Foundation of the Graduate University of the Chinese Academy of Sciences
文摘In this work,uniform reduced graphene oxide（RGO） films were formed on poly-（ethylene terephthalate）（PET） substrates using a simple drop-casting method.We investigated four types of substrates：unmodified PET,polydopamine-coated PET.carboxyl-group-modified PET,and alkyl-group-modified PET.Upon water evaporation,the surface of the polydopamine-modified PET substrates can interact with the reduced graphene oxide sheets to form flattened and continuous RGO films,which exhibit a sheet resistance of 21.75 kΩ/sq at 82% transmittance.The result indicates that the properties of the surface groups determined whether uniform and flattened RGO films could be formed on the substrates.Hence,we proposed a simple and effective way to produce transparent and conductive films in which the catechol unit exhibits a great effect on the deposition of uniform RGO films on PET substrates.
