Flexible, Transparent and Conductive Metal Mesh Films with Ultra‑High FoM for Stretchable Heating and Electromagnetic Interference Shielding

Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.

Fabrication of UV-Curing Linalool-Polysiloxane Hybrid Films with High Refractive Index and Transparency

In this article,a series of high refractive indices(1.50-1.53)thiol phenyl polysiloxane(TPS)were synthesized via hydrolytic sol-gel reaction.The Fourier transform infrared spectra(FT-IR)and nuclear magnetic resonance spectra(NMR)results showed that TPS conformed to the predicted structures.Natural terpene linalool was exploited as photocrosslinker to fabricate UV-curing linalool-polysiloxane hybrid films(LPH)with TPS via photoinitiated thiol-ene reaction.LPH rapidly cured under UV irradiation at the intensity of 80 mW/cm^(2) in 30 s,exhibiting good UV-curing properties.The optical transmittance of LPH in the wavelength of 300-800 nm was over 90%,exhibiting good optical transparency.The water contact angle and water vapor permeability results showed that the introduction of phenyl groups enhance the hydrophobicity and water vapor barrier properties of LPH.The results indicated the potential of LPHs in the applications of optical functional coatings.

Transparent Thermally Tunable Microwave Absorber Prototype Based on Patterned VO2 Film

Transparent microwave absorbers that exhibit high optical transmittance and microwave absorption capability are ideal,although having a fixed absorption performance limits their applicability.Here,a simple,transparent,and thermally tunable microwave absorber is proposed,based on a patterned vanadium dioxide(VO_(2))film.Numerical calculations and experiments demonstrate that the proposed VO_(2)absorber has a high optical transmittance of 84.9%at 620 nm;its reflection loss at 15.06 GHz can be thermally tuned from–4.257 to–60.179 dB,and near-unity absorption is achieved at 523.750 K.Adjusting only the patterned VO_(2)film duty cycle can change the temperature of near-unity absorption.Our VO_(2)absorber has a simple composition,a high optical transmittance,a thermally tunable microwave absorption performance,a large modulation depth,and an adjustable temperature tuning range,making it promising for application in tunable sensors,thermal emitters,modulators,thermal imaging,bolometers,and photovoltaic devices.

Periodic transparent nanowires in ITO film fabricated via femtosecond laser direct writing

This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Effects of Atomic Oxygen Irradiation on Transparent Conductive Oxide Thin Films

Transparent conductive oxide （TCO） thin film is a kind of functional material which has potential applications in solar cells and atomic oxygen （AO） resisting systems in spacecrafts. Of TCO, ZnO：Al （ZAO） and In2O3：Sn （ITO） thin films have been widely used and investigated. In this study, ZAO and ITO thin films were irradiated by AO with different amounts of fluence. The as-deposited samples and irradiated ones were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and Hall-effect measurement to investigate the dependence of the structure, morphology and electrical properties of ZAO or ITO on the amount of fluence of AO irradiation. It is noticed that AO has erosion effects on the surface of ZAO without evident influences upon its structure and conductive properties. Moreover, as the amount of AO fluence rises, the carrier concentration of ITO decreases causing the resistivity to increase by at most 21.7%.

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.

Humidity Sensing of Stretchable and Transparent Hydrogel Films for Wireless Respiration Monitoring

Respiratory monitoring plays a pivotal role in health assessment and provides an important application prospect for flexible humidity sensors.However,traditional humidity sensors suffer from a trade-off between deformability,sensitivity,and transparency,and thus the development of high-performance,stretchable,and low-cost humidity sensors is urgently needed as wearable electronics.Here,ultrasensitive,highly deformable,and transparent humidity sensors are fabricated based on cost-effective polyacrylamide-based double network hydrogels.Concomitantly,a general method for preparing hydrogel films with controllable thickness is proposed to boost the sensitivity of hydrogel-based sensors due to the extensively increased specific surface area,which can be applied to different polymer networks and facilitate the development of flexible integrated electronics.In addition,sustainable tapioca rich in hydrophilic polar groups is introduced for the first time as a second cross-linked network,exhibiting excellent water adsorption capacity.Through the synergistic optimization of structure and composition,the obtained hydrogel film exhibits an ultrahigh sensitivity of 13,462.1%/%RH,which is unprecedented.Moreover,the hydrogel film-based sensor exhibits excellent repeatability and the ability to work normally under stretching with even enhanced sensitivity.As a proof of concept,we integrate the stretchable sensor with a specially designed wireless circuit and mask to fabricate a wireless respiratory interruption detection system with Bluetooth transmission,enabling real-time monitoring of human health status.This work provides a general strategy to construct high-performance,stretchable,and miniaturized hydrogel-based sensors as next-generation wearable devices for real-time monitoring of various physiological signals.

Optical and Mechanical Properties of Transparent Conductive Al-Doped ZnO Films Deposited by the Sputtering Method

Al-doped ZnO transparent conductive oxide thin films(AZO)are prepared by the magnetron sputtering method.The structural,optical and mechanical properties of the AZO films are studied systematically.The average haze of the AZO sample is increased from 0.34%to 23.6%through wet etching treatment between 380 and 1100nm,and the etched AZO sample has a higher average transmittance of about 82.3%in infrared wavelength range from 760 to 1100nm due to the reduction of absorption by carriers.The average hardness and elastic modulus of the as-deposited AZO films,as determined using the nanoindentation technique,are approximately 10.2 GPa and 130 GPa,respectively.The critical fracture load related to the adhesion strength is about 91 mN.The optimized optical and electrical properties and referable mechanical data indicate that AZO films have good prospects for commercial applications.

Preparation and characterization of ZnO/Cu/ZnO transparent conductive films

ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476Ω/sq and transmittance of 76% at 550nm （6 layers）. The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens.

Sol-gel Processing of a Transparent Upconversion Luminescent Film with β-Na YF_4:Yb^(3+), Er^(3+) Microrods as Activator

β-Na YF4:Yb3+,Er3+ microrods were synthesized through hydrothermal methods. Polyethylene glycol with molecular weight of 6000 was used as surfactant. A series of transparent silica gel films with upconversion luminescence property was prepared through sol-gel method; the prepared β-Na YF4:Yb3+,Er3+ microrods were used as activator. The silica gel films show strong upconversion emission under excitation of 980-nm laser beam.

Transparent and anti-fogging AlPO_(4)-5 films constructed by oblique oriented nano-flake crystals

In the present work,transparent and anti-fogging AlPO_(4)-5 films were prepared on glass substrates using a novel developed process.The process entails a simple in-situ sol–gel followed by vapor phase transport.The in-situ sol–gel process was implemented by coating the precursor sols for the synthesis of AlPO4-5 on the glass substrates successively using the spin-coating method.The films and powders scribed from the films were characterized by X-Ray diffraction(XRD),Fourier transform infrared spectroscopy(FT-IR),scanning electron microscope(SEM),atomic force microscope(AFM),X-ray photoelectron spectroscopy and transmission electron microscope(TEM).The unique films were composed of oblique oriented nanoflake AlPO_(4)-5 crystals with the thickness of about 20 nm.The formation of nano-flake crystals can be ascribed to the high concentration of the precursors,resulting in the formation of a supersaturation system.The obtained films showed high antifogging performance due to the superhydrophilicity with a water contact angle of lower than 1.0°.The silicone oil contact angle was also low about 8.2°.In addition,heteroatom-substituted AlPO_(4)-5 films showing different colors can be obtained easily by simply adding transition metal ions in the phosphate acid solution during the preparation that can extend the application of the method for different coating demand.

Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the Transparent Conductive CdIn_2O_4 Thin Films

Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated

Present Status of the Development and Application of Transparent Conductors Oxide Thin Solid Films

Luis Casta&ntildeeda’s article, 'Present Status of the Development and Application of Transparent Conductors Oxide Thin Solid Films ', has been retraced by Ray Boxman because of plagiarism. The scientific community takes a very strong view on this matter and we treat all unethical behavior such as plagiarism seriously. This paper published in Vol.2 No.9 1233-1242, 2011, has been removed from this site.

Preparation of PDOT:PSS Transparent Conductive Film Using Ink-Jet Printing

Flexible devices produced using organic materials have attracted the attention of many researchers. Important components of these flexible devices include transparent electrodes, which transmit visible light and possess conductivity. The present study improved the characteristics of a transparent conductive film that was made of poly(3, 4 ethylenedioxythiophene):poly(styrenesul-fonate) (PEDOT:PSS), an organic conductive material, and that had been prepared using ink-jet printing. To improve the resistance value and visible light transmittance of the film, the film substrate was first cleaned with ultraviolet/ozone treatment, and then the film was annealed after it was deposited on the substrate and dipped into a polar solvent. Consequently, the resistance value of the thin film decreased. However, the surface state of the film changed according to the treatment method and affected its visible light transmittance. Thus, the surface state of the film substrate, the annealing temperature after film deposition, and the dipping treatment with a polar solvent influenced the characteristics of a thin film.

Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD

Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Characteristics Improvement of PEDOT:PSS Transparent Conductive Film Prepared by Ink-Jet Printing

Recently, a high-performance and low-priced transparent conductive film has been expected to be developed because flexible devices produced using organic materials have been actively studied. An indium tin oxide (ITO) thin film, which has been generally used as a material for a transparent conductive film, has problems, such as fragility to bending stress and depletion of the resource. The present study used poly(3, 4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS), an organic electroconductive material, and examined the improvement in the resistance value and visible light transmittance of a transparent conductive film produced using the ink-jet method. In previous studies, we reported that, to improve the resistance value and visible light transmittance of a thin film, it was effective to clean the film substrate with ultraviolet/ozone (UV/O3) treatment, anneal the film after it was deposited on the substance, and dip the annealed film into a polar solvent. Focusing on the thin film processing between printing operations, the present study improved resistance value and visible light transmittance by examining both the application methods of a polar solvent and the annealing time between printing operations. As a result, the resistance value and visible light transmittance of a PEDOT:PSS thin film were 390.4 Ω and 86.6%, respectively. This film was obtained by applying a polar solvent and performing annealing for 30 min between printing operations. The printing was performed three times.