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The medium-temperature dependence of jet transport coefficient in high-energy nucleus-nucleus collisions
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作者 Man Xie Qing-Fei Han +2 位作者 En-Ke Wang Ben-Wei Zhang Han-Zhong Zhang 《Nuclear Science and Techniques》 SCIE EI CAS CSCD 2024年第7期173-191,共19页
The medium-temperature T dependence of the jet transport coefficient̂q was studied via the nuclear modification factor RAA(p_(T))and elliptical flow parameter v_(2)(p_(T))for large transverse momentum p_(T) hadrons in... The medium-temperature T dependence of the jet transport coefficient̂q was studied via the nuclear modification factor RAA(p_(T))and elliptical flow parameter v_(2)(p_(T))for large transverse momentum p_(T) hadrons in high-energy nucleus-nucleus collisions.Within a next-to-leading-order perturbative QCD parton model for hard scatterings with modified fragmentation functions due to jet quenching controlled by q,we check the suppression and azimuthal anisotropy for large p_(T) hadrons,and extract q by global fits to RAA(pT)and v_(2)(pT)data in A+A collisions at RHIC and LHC,respectively.The numerical results from the best fits show that q∕T^(3) goes down with local medium-temperature T in the parton jet trajectory.Compared with the case of a constant q∕T^(3),the going-down T dependence of q∕T^(3) makes a hard parton jet to lose more energy near T_(c) and therefore strengthens the azimuthal anisotropy for large pT hadrons.As a result,v_(2)(p_(T))for large pT hadrons was enhanced by approximately 10%to better fit the data at RHIC/LHC.Considering the first-order phase transition from QGP to the hadron phase and the additional energy loss in the hadron phase,v_(2)(p_(T))is again enhanced by 5-10%at RHIC/LHC. 展开更多
关键词 Jet quenching Jet transport parameter Hadron suppression Elliptic flow coefficient Energy loss asymmetry
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Investigation of the performance of CF3I/c-C4F8/N2 and CF3I/c-C4F8/CO2 gas mixtures from electron transport parameters 被引量:5
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作者 Ruishuang ZHONG Su ZHAO +4 位作者 Dengming XIAO Hui WANG Xiuchen JIANG Zhongmin YU Yunkun DENG 《Plasma Science and Technology》 SCIE EI CAS CSCD 2020年第5期44-51,共8页
CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas m... CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas mixtures with c-C4F8 and buffer gases N2 and CO2 by considering dielectric strength from electron transport parameters based on the Boltzmann method and synergistic effect analysis,compared with SF6 gas mixtures.The results confirm that the critical electric field strength of CF3I/c-C4F8/70%CO2 is greater than that of 30%SF6/70%CO2 when the CF3I content is greater than 17%.Moreover,a higher content of c-C4F8 decreases the sensitivity of gas mixtures to an electric field,and this phenomenon is more obvious in CF3I/c-C4F8/CO2 gas mixtures.The synergistic effects for CF3I/c-C4F8/70%N2 were most obvious when the c-C4F8 content was approximately 20%,and for CF3I/c-C4F8/70%CO2 when the c-C4F8 content was approximately 10%.On the basis of this research,CF3I/c-C4F8/70%N2 shows better insulation performance when the c-C4F8 content is in the15%–20%range.For CF3I/c-C4F8/70%CO2,when the c-C4F8 content is in the 10%–15%range,the gas mixtures have excellent performance.Hence,these gas systems might be used as alternative gas mixtures to SF6 in high-voltage equipment. 展开更多
关键词 CF3I/c-C4F8/N2 gas mixtures CF3I/c-C4F8/CO2 gas mixtures Boltzmann method electron transport parameters synergistic effect
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Influences of uncertain parameters on groundwater contaminant transport modeling
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《Global Geology》 1998年第1期99-100,共2页
关键词 Influences of uncertain parameters on groundwater contaminant transport modeling
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Boron and Zinc Transport Through Intact Columns of Calcareous Soils
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作者 M. MAHMOOD-UL-HASSAN M. S. AKHTAR G. NABI 《Pedosphere》 SCIE CAS CSCD 2008年第4期524-532,共9页
Leaching of boron (B) and zinc (Zn) can be significant in some pedomorphic conditions, which can cause contamination of shallow groundwater and economic losses. Boron and Zn adsorption and transport was studied us... Leaching of boron (B) and zinc (Zn) can be significant in some pedomorphic conditions, which can cause contamination of shallow groundwater and economic losses. Boron and Zn adsorption and transport was studied using 8.4 cm diameter × 28 cm long intact columns from two calcareous soil series with differing clay contents and vadose zone structures: Lyallpur soil series, clay loam (fine-silty, mixed, hyperthermic Ustalfic Haplargid), and Sultanpur soil series, sandy loam (coarse-silty, mixed, hyperthermic Ustollic Camborthid). The adsorption isotherms were developed by equilibrating soil with 0.01 tool L^-1 CaCl2 aqueous solution containing varying amounts of B and Zn and were fitted to the Langmuir equation. The B and Zn breakthrough curves were fitted to the two-domain convective-dispersive equation. At the end of the leaching experiment, 0.11 L 10 g L^-1 blue dye solution was also applied to each column to mark the flow paths. The Lyallpur soil columns had a slightly greater adsorption partition coefficient both for B and Zn than the Sultanpur soil columns. In the Lyallpur soil columns, B arrival was immediate but the peak concentration ratio (the concentration in solution at equilibrium/concentration applied) was lower than that in the Sultanpur soil columns. The breakthrough of B in the Sultanpur soil columns occurred after about 10 cm of cumulative drainage in both the columns; the rise in effluent concentration was fast and the peak concentration ratio was almost 1. Zinc leaching through the soil columns was very limited as only one column from the Lyallpur soil series showed Zn breakthrough in the effluent where the peak concentration ratio was only 0.05. This study demonstrates the effect of soil structure on B transport and has implications for the nutrient management in field soils. 展开更多
关键词 adsorption isotherm BORON intact soil column transport parameters ZINC
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Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon
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作者 Xiao-Ke Lei Bin-Cheng Li +3 位作者 Qi-Ming Sun Jing Wang Chun-Ming Gao Ya-Fei Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第3期575-580,共6页
The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabricati... The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon. 展开更多
关键词 ultra-low energy ion implantation differential nonlinear photocarrier radiometry junction depth electronic transport parameters
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Performance Enhancement in Dye-Sensitized Solar Cells with Composite Mixtures of TiO_2 Nanoparticles and TiO_2 Nanotubes 被引量:5
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作者 D.Maheswari P.Venkatachalam 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2015年第3期354-361,共8页
In the present investigation,a new composite nanostructured photoanodes were prepared using TiO_2 nanotubes(TNTs) with TiO_2 nanoparticles(TNPs).TNPs were synthesized by sol-gel method,and TNTs were prepared throu... In the present investigation,a new composite nanostructured photoanodes were prepared using TiO_2 nanotubes(TNTs) with TiO_2 nanoparticles(TNPs).TNPs were synthesized by sol-gel method,and TNTs were prepared through alkali hydrothermal method.Dye-sensitized solar cells(DSSCs) were fabricated with different photoanodes comprising of various ratios of TNTs + TNPs,synthetic indigo dye as photosensitizer,PMII(l-propyl-3-methylimidazolium iodide) as ionic liquid electrolyte and cobalt sulfide as counter electrode.The structures and morphologies of TNPs and TNTs were analyzed through X-ray diffractometer,transmission electron microscope and scanning electron microscopes.The results of the investigation showed that the DSSC-4 made with composite photoanode structure(TNTs/TNPs)(90% of TNPs + 10% of TNTs) had improved photocurrent efficiency(2.11%) than pure TNPs(1.00%) and TNT film(0.78%).Electrochemical impedance spectra revealed that the composite TNTs/TNPs film-based DSSCs possessed the lowest charge-transfer resistances and longest electron lifetime.Hence,it could be concluded that the composite TNTs/TNPs photoanode facilitates the charge transport rate and enhances the efficiencies of DSSCs. 展开更多
关键词 TNPs/TNTs composite mixtures Charge recombination Electron transport Photovoltaic parameters EIS analysis
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