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Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films
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作者 李龙龙 徐文 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第4期105-108,共4页
We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi2Sea at room temperature. The hybridization b... We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi2Sea at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi2Sea-based TITFs as high-performance TE materials and devices. 展开更多
关键词 TE Thermoelectric Transport by Surface states in Bi2Se3-Based Topological Insulator Thin Films Bi ZT SEEBECK
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Electrical-Controlled Transport for Surface States in a Dirac Semimetal Quantum Wire
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作者 肖贤波 刘正方 +3 位作者 何扬名 李会丽 艾国平 杜琰 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第12期117-120,共4页
The transport properties of a Dirac semimet^l quantum wire with two side gates are theoretically studied by adopting the lattice Green function method. It is found that a residual conductance quantum contributed from ... The transport properties of a Dirac semimet^l quantum wire with two side gates are theoretically studied by adopting the lattice Green function method. It is found that a residual conductance quantum contributed from the surface states can be switched on or off by tuning the electron energy or the side gates voltage. This ideal switching effect for the surface Dirac electron results from the transversal quantum confinement of the quantum wire in combination with the electrostatic potential induced by the side gates. These findings may provide useful guidance for designing all-electrical topological nanoelectronic devices. 展开更多
关键词 Electrical-Controlled Transport for Surface states in a Dirac Semimetal Quantum Wire DSM
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