The lattice of the Shanghai Synchrotron Radiation Facility(SSRF) storage ring was upgraded in the Phase-II beamline project, and thus far, 18 insertion devices(IDs) have been installed. The IDs cause closed-orbit dist...The lattice of the Shanghai Synchrotron Radiation Facility(SSRF) storage ring was upgraded in the Phase-II beamline project, and thus far, 18 insertion devices(IDs) have been installed. The IDs cause closed-orbit distortions, tune drift, and coupling distortions in the SSRF storage ring, all of which are significant issues that require solutions. In this study, an ID orbit feedforward compensation system based on a response matrix using corrector coils was developed, and it was applied to all commissioned IDs in the SSRF storage ring. After correction, the maximum ID-induced horizontal and vertical orbit distortions were less than 5.0 and 3.5 μm, respectively. Some interesting phenomena observed during the measurement process were explained. Additionally, optical and coupling feedforward systems were developed using quadrupole and skew quadrupole magnets installed on the front and back of elliptically polarizing undulators(EPUs). Moreover, over nearly four months of operation, the developed strategy delivered a satisfactory performance in the SSRF storage ring.展开更多
The technology for phase detection of liquid crystal optical device is a difficult research in current domestic and overseas. However, for the existing liquid crystal optical device, aiming at the poor anti-vibration ...The technology for phase detection of liquid crystal optical device is a difficult research in current domestic and overseas. However, for the existing liquid crystal optical device, aiming at the poor anti-vibration capability and poor versatile of phase detection, the complexity of phase retrieval algorithm, we propose a new phase measurement principle and experimental methods of liquid crystal optical device. It is a phase measurement method based on the combination of phase- shifting interferometer and phase conjugation technology. The deflection characteristics of the liquid crystal device means the device can implement phase modulation to only one direction of polarized light while is completely transparent to orthogonal polarized light. We put forward the phase shift of the orthogonal polarization phase shift interferometer method, using phase shifting interference as well as the combination of phase conjugate means to achieve its phase measurement. So we can retrieves devices modulation phase simply and efficiently combines with phase- shifting interferometer technology.展开更多
为了精确地反映死区时间对双有源桥式变换器(dual active bridge,DAB)移相角偏移与传输功率的影响,将缓冲电容的作用引入到DAB死区效应的分析中。通过设定最优死区时间将电感电流过零点排除在死区时段之外,降低了不同电压模式下死区过...为了精确地反映死区时间对双有源桥式变换器(dual active bridge,DAB)移相角偏移与传输功率的影响,将缓冲电容的作用引入到DAB死区效应的分析中。通过设定最优死区时间将电感电流过零点排除在死区时段之外,降低了不同电压模式下死区过程分析的难度,并得到一个更精确的DAB移相角与传输功率的模型。结果表明:应用该模型能够准确地计算出DAB任意工况下的静态工作点,从而提高DAB小信号建模的精度。展开更多
功率器件应用于航空航天等领域,可以起到功率转换、开关控制等作用。以GaN为代表的宽禁带半导体材料器件已逐渐地成为新型功率器件的不二选择。介绍了一款p型GaN栅的100 V GaN HEMT功率器件,给出了该器件各项参数的仿真情况、常态测试...功率器件应用于航空航天等领域,可以起到功率转换、开关控制等作用。以GaN为代表的宽禁带半导体材料器件已逐渐地成为新型功率器件的不二选择。介绍了一款p型GaN栅的100 V GaN HEMT功率器件,给出了该器件各项参数的仿真情况、常态测试参数和三温实验数据,并给出了仿真结果与器件实测结果的对比情况。相较于25℃,在125℃环境温度下,器件阈值电压漂移-0.1 V;在-55℃环境温度下,阈值电压漂移+0.1 V;在-55~125℃全温范围内,器件击穿电压没有明显的变化,均为108 V。说明该GaN HEMT器件有较强的全温范围适应能力。展开更多
基金supported by the Key Program of Shanghai Science and Technology Innovation Center(No.1174000565)。
文摘The lattice of the Shanghai Synchrotron Radiation Facility(SSRF) storage ring was upgraded in the Phase-II beamline project, and thus far, 18 insertion devices(IDs) have been installed. The IDs cause closed-orbit distortions, tune drift, and coupling distortions in the SSRF storage ring, all of which are significant issues that require solutions. In this study, an ID orbit feedforward compensation system based on a response matrix using corrector coils was developed, and it was applied to all commissioned IDs in the SSRF storage ring. After correction, the maximum ID-induced horizontal and vertical orbit distortions were less than 5.0 and 3.5 μm, respectively. Some interesting phenomena observed during the measurement process were explained. Additionally, optical and coupling feedforward systems were developed using quadrupole and skew quadrupole magnets installed on the front and back of elliptically polarizing undulators(EPUs). Moreover, over nearly four months of operation, the developed strategy delivered a satisfactory performance in the SSRF storage ring.
文摘The technology for phase detection of liquid crystal optical device is a difficult research in current domestic and overseas. However, for the existing liquid crystal optical device, aiming at the poor anti-vibration capability and poor versatile of phase detection, the complexity of phase retrieval algorithm, we propose a new phase measurement principle and experimental methods of liquid crystal optical device. It is a phase measurement method based on the combination of phase- shifting interferometer and phase conjugation technology. The deflection characteristics of the liquid crystal device means the device can implement phase modulation to only one direction of polarized light while is completely transparent to orthogonal polarized light. We put forward the phase shift of the orthogonal polarization phase shift interferometer method, using phase shifting interference as well as the combination of phase conjugate means to achieve its phase measurement. So we can retrieves devices modulation phase simply and efficiently combines with phase- shifting interferometer technology.
文摘为了精确地反映死区时间对双有源桥式变换器(dual active bridge,DAB)移相角偏移与传输功率的影响,将缓冲电容的作用引入到DAB死区效应的分析中。通过设定最优死区时间将电感电流过零点排除在死区时段之外,降低了不同电压模式下死区过程分析的难度,并得到一个更精确的DAB移相角与传输功率的模型。结果表明:应用该模型能够准确地计算出DAB任意工况下的静态工作点,从而提高DAB小信号建模的精度。
文摘功率器件应用于航空航天等领域,可以起到功率转换、开关控制等作用。以GaN为代表的宽禁带半导体材料器件已逐渐地成为新型功率器件的不二选择。介绍了一款p型GaN栅的100 V GaN HEMT功率器件,给出了该器件各项参数的仿真情况、常态测试参数和三温实验数据,并给出了仿真结果与器件实测结果的对比情况。相较于25℃,在125℃环境温度下,器件阈值电压漂移-0.1 V;在-55℃环境温度下,阈值电压漂移+0.1 V;在-55~125℃全温范围内,器件击穿电压没有明显的变化,均为108 V。说明该GaN HEMT器件有较强的全温范围适应能力。
