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Trigger control characteristics of fuze-recoil simulation system based on electromagnetic launcher
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作者 Wenhao Wang Shihua Bi +2 位作者 Hongjun Xiang Chao Zhan Xichao Yuan 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2017年第3期563-571,共9页
Fuze is the information processing and control unit of the ammunition, so the quality of the fuze becomes one of the most important aspects of ammunition detection. Since using recoil force is a common method to the a... Fuze is the information processing and control unit of the ammunition, so the quality of the fuze becomes one of the most important aspects of ammunition detection. Since using recoil force is a common method to the arm fuze, its dynamic simulation test has always been the focus of the fuze test research. A new fuze recoil environmental simulation method is proposed based on the electromagnetic launcher. Then the trigger control characteristics of the fuze recoil simulation system and the influence of the trigger position on the recoil force are studied. The results of the study show that although the pulse width of the armature force curve can be changed by adjusting the trigger position, due to the limit of the range, there also exists the contradiction that the electromagnetic pulse width gets narrow with the increase of electromagnetic force peak. Thus, it cannot meet the requirements of the fuze launch recoil simulation. In order to make the recoil force close to the actual environment, the multi-stage trigger control characteristics are analyzed, and the influence of trigger position on recoil environmental force characteristics is studied. Then a fuze launch recoil environmental simulation platform is established and continuous electromagnetic force is achieved by using the trigger strategy. Finally, the experiment is performed to simulate the fuze launch recoil environment and show the feasibility and effectiveness of the proposed theoretical analysis. The major research work of this paper includes studying the composition and basic principle of the simulation system, establishing a launch model to analyze the single-stage and multi-stage coil fuze launch recoil characteristics, designing the test device to verify the correctness and validity of the research. This paper draws the conclusions that the feasibility of the fuze launch environmental simulation based on the electromagnetic launcher is verified, the trigger position has a great influence on force peak continuity, the problems of low maximum overload peak and short peak duration in the multi-stage coil fuze launch environmental simulation can be effectively solved through adjusting the trigger position, the system has creative and extensive application prospects. 展开更多
关键词 trigger control fuze-recoil simulation electromagnetic launcher
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A novel DTSCR with a variation lateral base doping structure to improve turn-on speed for ESD protection 被引量:1
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作者 刘继芝 刘志伟 +1 位作者 贾泽 刘俊杰 《Journal of Semiconductors》 EI CAS CSCD 2014年第6期67-75,共9页
The turn-on speed of electrostatic discharge (ESD) protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device (DTSCR) can be used effe... The turn-on speed of electrostatic discharge (ESD) protection devices is very important for the protection of the ultrathin gate oxide. A double trigger silicon controlled rectifier device (DTSCR) can be used effectively for ESD protection because it can turn on relatively quickly. The turn-on process of the DTSCR is first studied, and a formula for calculating the turn-on time of the DTSCR is derived. It is found that the turn-on time of the DTSCR is determined mainly by the base transit time of the parasitic p-n-p and n-p-n transistors. Using the variation lateral base doping (VLBD) structure can reduce the base transit time, and a novel DTSCR device with a VLBD structure (VLBD_DTSCR) is proposed for ESD protection applications. The static-state and turn-on characteristics of the VLBD DTSCR device are simulated. The simulation results show that the VLBD structure can introduce a built-in electric field in the base region of the parasitic n-p-n and p--n-p bipolar transistors to accelerate the transport of free-carriers through the base region. In the same process and layout area, the turn-on time of the VLBD DTSCR device is at least 27% less than that of the DTSCR device with the traditional uniform base doping under the same value of the trigger current. 展开更多
关键词 electrostatic discharge (ESD) double triggered silicon controlled rectifier (DTSCR) variation lateralbase doping (VLBD) built-in electric field turn-on speed
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