A 1.55μm Fabry-Perot (F-P) thermo-optical t unable filter is fabricated.The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique.Due to the excellent thermo-optical property o...A 1.55μm Fabry-Perot (F-P) thermo-optical t unable filter is fabricated.The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique.Due to the excellent thermo-optical property of a-Si,the refractive index of the F-P cavity will be changed by heating;the transmittance resonant peak will therefore shift substantially.The measured tuning rang is 12nm, FWHM (full-width-at-half-maximum) of the transmissi on peak is 9nm,and heating efficiency is 0.1K/mW.The large FWHM is mainly due to th e non-ideal coating deposition and mirror undulation.Possible improvements to increase the efficiency of heating are suggested.展开更多
Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater o...Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.展开更多
High-resolution multi-color printing relies upon pixelated optical nanostructures,which is crucial to promote color display by producing nonbleaching colors,yet requires simplicity in fabrication and dynamic switching...High-resolution multi-color printing relies upon pixelated optical nanostructures,which is crucial to promote color display by producing nonbleaching colors,yet requires simplicity in fabrication and dynamic switching.Antimony trisulfide(Sb_(2)S_(3))is a newly rising chalcogenide material that possesses prompt and significant transition of its optical characteristics in the visible region between amorphous and crystalline phases,which holds the key to color-varying devices.Herein,we proposed a dynamically switchable color printing method using Sb_(2)S_(3)-based stepwise pixelated Fabry-Pérot(FP)cavities with various cavity lengths.The device was fabricated by employing a direct laser patterning that is a less timeconsuming,more approachable,and low-cost technique.As switching the state of Sb_(2)S_(3) between amorphous and crystalline,the multi-color of stepwise pixelated FP cavities can be actively changed.The color variation is due to the profound change in the refractive index of Sb_(2)S_(3) over the visible spectrum during its phase transition.Moreover,we directly fabricated sub-50 nm nano-grating on ultrathin Sb_(2)S_(3) laminate via microsphere 800-nm femtosecond laser irradiation in far field.The minimum feature size can be further decreased down to~45 nm(λ/17)by varying the thickness of Sb_(2)S_(3) film.Ultrafast switchable Sb_(2)S_(3) photonic devices can take one step toward the next generation of inkless erasable papers or displays and enable information encryption,camouflaging surfaces,anticounterfeiting,etc.Importantly,our work explores the prospects of rapid and rewritable fabrication of periodic structures with nano-scale resolution and can serve as a guideline for further development of chalcogenide-based photonics components.展开更多
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of...A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm^2only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current densitycan be reduced remarkably compared with the free-running QD gain device.展开更多
A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode (LD) array with multiple optical carriers and a Fabry-Perot (F-P) laser diode. Multiple optical carriers in conj...A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode (LD) array with multiple optical carriers and a Fabry-Perot (F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.展开更多
A high-pulse-energy high-beam-quality tunable Ti:sapphire laser pumped by a frequency-doubled Nd:YAG laser is demonstrated. Using a fused-silica prism as the dispersion element, a tuning range of 740-855 nm is obtai...A high-pulse-energy high-beam-quality tunable Ti:sapphire laser pumped by a frequency-doubled Nd:YAG laser is demonstrated. Using a fused-silica prism as the dispersion element, a tuning range of 740-855 nm is obtained. At an incident pump energy of 774mJ, the maximum output energy of 104mJ at 790nm with a pulse width of 100μs is achieved at a repetition rate of 5 Hz. To the best of our knowledge, it is the highest pulse energy at 790 nm with pulse width of hundred micro-seconds for an all-solid-state laser. The linewidth of output is 0.5 nm, and the beam quality factor M2 is 1.16. The high-pulse-energy high-beam-quality tunable Ti:sapphire laser in the range of 740-855 nm can be used to establish a more accurate and consistent absolute scale of second-order optical-nonlinear coefficients for KBe2BO3F2 measured in a wider wavelength range and to assess Miller's rule quantitatively.展开更多
We report the study on a short wavelength-tunable vertical-cavity surface-emitting laser utilizing a monolithically integrated bridge tuning microelectromechanical system. A deformable-bridge top mirror suspended abov...We report the study on a short wavelength-tunable vertical-cavity surface-emitting laser utilizing a monolithically integrated bridge tuning microelectromechanical system. A deformable-bridge top mirror suspended above an active region is utilized. Applied bridge-substrate bias produces an electrostatic force which reduces the spacing of air-gap and tunes the resonant wavelength toward a shorter wavelength (blue-shift), Good laser characteristics are obtained: such as continuous tuning ranges over 11 nm near 940 nm for 0-9 V tuning bias, the peak output power near 1 mW and the full-width-half-maximum limited to approximately 3.2-6.8 rim. A detailed simulation of the micromechanical and optical characteristics of these devices is performed, and the ratio of bridge displacement to wavelength shift has been found to be 3:1.展开更多
A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss an...A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm (from 1137.3 nm to 1182.8 nm) under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.展开更多
A 1550-nm linearly tunable continuous wave (CW) single-mode external cavity diode laser (ECDL) based on a singlecavity all-dielectric thin-film Fabry-Pérot filter (s-AFPF) is proposed and realized in this p...A 1550-nm linearly tunable continuous wave (CW) single-mode external cavity diode laser (ECDL) based on a singlecavity all-dielectric thin-film Fabry-Pérot filter (s-AFPF) is proposed and realized in this paper. Its internal optical components as well as their operation mechanisms are introduced first, and then its longitudinal mode output characteristic is theoretically analyzed. Afterwards, we set up the experimental platform for the output characteristic measurement of this tunable ECDL; under different experimental conditions, we execute accurate and real-time measurements for the output central wavelength, output optical power, output longitudinal mode distribution, and the line-width of the tunable ECDL in its tuning process. By summing up the optimal experimental condition from the measured data, we obtain the optimal tunable ECDL relevant parameters: the tunable ECDL has a linear mode-hop-free wavelength tuning region of 1547.203 nm-1552.426 nm, a stable output optical power in the range of 40 μW-50 μW, and a stable output longitudinal mode distribution of a single longitudinal mode with a line-width in the range of 100 MHz-150 MHz. This tunable ECDL can be used in environmental gas monitoring, atomic and molecular laser spectroscopy research, precise measurements, and so on.展开更多
This paper presents the diffraction effects on the performance of a dual external cavity tunable laser source, whose external cavities are constructed by micro electro mechanical systems (MEMS). One of the main proble...This paper presents the diffraction effects on the performance of a dual external cavity tunable laser source, whose external cavities are constructed by micro electro mechanical systems (MEMS). One of the main problems in these structures is the optical diffraction as the emitting surface of the laser diode is usually quite limited in the transverse directions. The emitted beam diffracts rapidly in the air and only a small amount of light is coupled back to the source that usually limits the tuning range of the source. Device characteristics such as tuning range, wavelength shift and sensitivity are evaluated. New expression is used and multiple reflections inside external cavities are considered. The simulation results have shown that single external cavity has limited tuning range. It is shown that multiple reflections have significant effect in our model. To get a better engineering for the dual ECTL dimensions, diffraction effects must be taken into account.展开更多
A wide wavelength tuning range and single-mode hybrid cavity laser consists of a square Whispering-Gallery(WG)microcavity and a Fabry–Pérot(FP)was introduced and demonstrated.A wavelength tuning range over 12.5 ...A wide wavelength tuning range and single-mode hybrid cavity laser consists of a square Whispering-Gallery(WG)microcavity and a Fabry–Pérot(FP)was introduced and demonstrated.A wavelength tuning range over 12.5 nm from 1760.87 to 1773.39 nm which was single-mode emitting was obtained with the side-mode suppression ratio over 30 dB.The hybrid cavity laser does not need grating etching and special epitaxial structure,which reduces the fabrication difficulty and cost,and shows the potential for gas sensing with absorption lines in this range.展开更多
The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,th...The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.展开更多
A surface plasmon interference lithography assisted by a Fabry-Perot (F-P) cavity composed of subwavelength metal gratings and a thin metal fihn is proposed to fabricate high-quality nanopatterns. The calculated res...A surface plasmon interference lithography assisted by a Fabry-Perot (F-P) cavity composed of subwavelength metal gratings and a thin metal fihn is proposed to fabricate high-quality nanopatterns. The calculated results indicate that uniform straight interference fringes with high contrast and high electric-field intensity are formed in the resist under the F-P cavity. The analyses of spatial frequency spectra illuminate the physical mechanism of the formation for the interference fringes. The influence of the F-P cavity spacing is discussed in detail. Moreover, the error analyses reveal that all parameters except the metal grating period in this scheme can bear large tolerances for the device fabrication.展开更多
We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr:LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser ...We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr:LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser rods and is designed by using two "X" folding cavities in cascade. A tunable laser output of ~ 180 mW has been achieved with the pump of single-striped laser diodes. Compared with lasers using single gain rod, the laser with dual rods shows less severe thermal effect and increases the output by more than two times.展开更多
Sensitive detection of acetylene(C_2H_2) is performed by absorption spectroscopy and wavelength modulation spectroscopy(WMS) based on Fiber Fabry–Perot tunable filter(FFP-TF) at 1530.32 nm. After being calibrat...Sensitive detection of acetylene(C_2H_2) is performed by absorption spectroscopy and wavelength modulation spectroscopy(WMS) based on Fiber Fabry–Perot tunable filter(FFP-TF) at 1530.32 nm. After being calibrated by Fiber Bragg Grating(FBG), FFP-TF is frequency-multiplexed and modulated at 20 Hz and 2.5 kHz respectively to achieve wavelength modulation. The linearity with 0.9907 fitting coefficient is obtained by measuring different concentrations in a 100 ppmv–400 ppmv range. Furthermore, the stability of the system is analyzed by detecting 50 ppmv and 100 ppmv standard gases for 2 h under room temperature and ambient pressure conditions respectively. The precision of 11 ppmv is achieved by calculating the standard deviation. Therefore, the measuring system of C_2H_2 detection can be applied in practical applications.展开更多
We demonstrate a fiber Fabry-Pérot cavity in the ultraviolet range, which covers the florescence wavelength for the <sup>2</sup>P to <sup>2</sup>S transition of Yb and is designed in the b...We demonstrate a fiber Fabry-Pérot cavity in the ultraviolet range, which covers the florescence wavelength for the <sup>2</sup>P to <sup>2</sup>S transition of Yb and is designed in the bad cavity limit for florescence collection. Benefiting from both the small cavity mode volume and the large atom dipole, a cavity with moderate finesse and high transmission still supports a good cooperativity, which is made and tested in experiment. Based on the measured experimental parameters, simulation performed on the cavity and ion shows a Purcell factor better than 2.5 and a single-mode fiber collection efficiency over 10%. This technology can support ultra-bright single photon sources based on trapped ions and can provide the possibility to link remote atoms as a quantum network.展开更多
The circular phased antenna array is commonly used for generating waves bearing Orbital Angular Momentum (OAM) in the radio frequency band, but it achieves a relatively low directivity. To overcome this drawback, we p...The circular phased antenna array is commonly used for generating waves bearing Orbital Angular Momentum (OAM) in the radio frequency band, but it achieves a relatively low directivity. To overcome this drawback, we present here a method to improve the directivity of an OAM circular phased antenna array by embedding it inside a Fabry-Perot cavity. The Fabry-Perot cavity contains three main parts: a partially reflecting surface (PRS), an air cavity and a ground plane. Simulation data show that the directivity of this new OAM antenna achieves an improvement of 8.2 dB over the original array. A prototype is realized and characterized. The simulated and measured characteristics are in good agreement.展开更多
文摘A 1.55μm Fabry-Perot (F-P) thermo-optical t unable filter is fabricated.The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique.Due to the excellent thermo-optical property of a-Si,the refractive index of the F-P cavity will be changed by heating;the transmittance resonant peak will therefore shift substantially.The measured tuning rang is 12nm, FWHM (full-width-at-half-maximum) of the transmissi on peak is 9nm,and heating efficiency is 0.1K/mW.The large FWHM is mainly due to th e non-ideal coating deposition and mirror undulation.Possible improvements to increase the efficiency of heating are suggested.
基金the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20210593)the Foundation of Jiangsu Provincial Double Innovation Doctor Program (Grant No. 30644)+2 种基金the National Natural Science Foundation of China (Grant No. 62204127)State Key Laboratory of Luminescence and Applications (Grant No. SKLA 202104)open research fund of Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education)。
文摘Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.
基金support from the National Key Research and Development Program of China (2020YFA0714504,2019YFA0709100).
文摘High-resolution multi-color printing relies upon pixelated optical nanostructures,which is crucial to promote color display by producing nonbleaching colors,yet requires simplicity in fabrication and dynamic switching.Antimony trisulfide(Sb_(2)S_(3))is a newly rising chalcogenide material that possesses prompt and significant transition of its optical characteristics in the visible region between amorphous and crystalline phases,which holds the key to color-varying devices.Herein,we proposed a dynamically switchable color printing method using Sb_(2)S_(3)-based stepwise pixelated Fabry-Pérot(FP)cavities with various cavity lengths.The device was fabricated by employing a direct laser patterning that is a less timeconsuming,more approachable,and low-cost technique.As switching the state of Sb_(2)S_(3) between amorphous and crystalline,the multi-color of stepwise pixelated FP cavities can be actively changed.The color variation is due to the profound change in the refractive index of Sb_(2)S_(3) over the visible spectrum during its phase transition.Moreover,we directly fabricated sub-50 nm nano-grating on ultrathin Sb_(2)S_(3) laminate via microsphere 800-nm femtosecond laser irradiation in far field.The minimum feature size can be further decreased down to~45 nm(λ/17)by varying the thickness of Sb_(2)S_(3) film.Ultrafast switchable Sb_(2)S_(3) photonic devices can take one step toward the next generation of inkless erasable papers or displays and enable information encryption,camouflaging surfaces,anticounterfeiting,etc.Importantly,our work explores the prospects of rapid and rewritable fabrication of periodic structures with nano-scale resolution and can serve as a guideline for further development of chalcogenide-based photonics components.
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086 and 60776037)
文摘A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm^2only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current densitycan be reduced remarkably compared with the free-running QD gain device.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61302026,61275067 and 61575034the Jiangsu Natural Science Foundation under Grant No BK2012432
文摘A tunable single-passband microwave photonic filter is proposed and demonstrated, based on a laser diode (LD) array with multiple optical carriers and a Fabry-Perot (F-P) laser diode. Multiple optical carriers in conjunction with the F-P LD will realize a filter with multiple passbands. By adjusting the wavelengths of the multiple optical carriers, multiple passbands are merged into a single passband with a broadened bandwidth. By varying the number of the optical carrier, the bandwidth can be adjusted. The central frequency can be tuned by adjusting the wavelength of the multiple optical carriers simultaneously. A single-passband filter implemented by two optical carriers is experimentally demonstrated.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61275157 and 61475040the National Key Scientific Instrument and Equipment Development,Project under Grant No 2012YQ120048+1 种基金the National Development Project for Major Scientific Research Facility under Grant No ZDYZ2012-2the National Key Research and Development Program of China under Grant No 2016YFB0402003
文摘A high-pulse-energy high-beam-quality tunable Ti:sapphire laser pumped by a frequency-doubled Nd:YAG laser is demonstrated. Using a fused-silica prism as the dispersion element, a tuning range of 740-855 nm is obtained. At an incident pump energy of 774mJ, the maximum output energy of 104mJ at 790nm with a pulse width of 100μs is achieved at a repetition rate of 5 Hz. To the best of our knowledge, it is the highest pulse energy at 790 nm with pulse width of hundred micro-seconds for an all-solid-state laser. The linewidth of output is 0.5 nm, and the beam quality factor M2 is 1.16. The high-pulse-energy high-beam-quality tunable Ti:sapphire laser in the range of 740-855 nm can be used to establish a more accurate and consistent absolute scale of second-order optical-nonlinear coefficients for KBe2BO3F2 measured in a wider wavelength range and to assess Miller's rule quantitatively.
基金Project supported by the National Natural Science Foundation of China (Grant No 60506012), the Fok Ying-Tong Foundation (Grant No 101062), the Natural Science Foundation of Beijing China (Grant No KZ200510005003), the Science Star of Beijing China (Grant No 2005A11), and the Funding Project for Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality China (Grant No 20051D0501502).Acknowledgement The authors gratefully acknowledge the staff of M0CVD, Zhou Deshu, and Han Jinru for technical assistance. The authors also thank Professor Academician Chen Lianghui, Professor Tan Manqing and Mr Wang Xuming at the Institute of Semiconductors, CAS for technological support in device fabrication.
文摘We report the study on a short wavelength-tunable vertical-cavity surface-emitting laser utilizing a monolithically integrated bridge tuning microelectromechanical system. A deformable-bridge top mirror suspended above an active region is utilized. Applied bridge-substrate bias produces an electrostatic force which reduces the spacing of air-gap and tunes the resonant wavelength toward a shorter wavelength (blue-shift), Good laser characteristics are obtained: such as continuous tuning ranges over 11 nm near 940 nm for 0-9 V tuning bias, the peak output power near 1 mW and the full-width-half-maximum limited to approximately 3.2-6.8 rim. A detailed simulation of the micromechanical and optical characteristics of these devices is performed, and the ratio of bridge displacement to wavelength shift has been found to be 3:1.
基金Project supported by the National Natural Science Foundation of China(Grant No.61274072)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm (from 1137.3 nm to 1182.8 nm) under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.
基金the Key Laboratory of Functional Crystals and Laser Technology,Chinese Academy of Sciences(Grant No.JTJG201109)the Guangdong Province&Chinese Academy of Sciences Comprehensive Strategic Cooperation Project(Grant No.2010A090100014)the 2009 Technology Research and Development Fund of Shenzhen,China(Grant No.O702011001)
文摘A 1550-nm linearly tunable continuous wave (CW) single-mode external cavity diode laser (ECDL) based on a singlecavity all-dielectric thin-film Fabry-Pérot filter (s-AFPF) is proposed and realized in this paper. Its internal optical components as well as their operation mechanisms are introduced first, and then its longitudinal mode output characteristic is theoretically analyzed. Afterwards, we set up the experimental platform for the output characteristic measurement of this tunable ECDL; under different experimental conditions, we execute accurate and real-time measurements for the output central wavelength, output optical power, output longitudinal mode distribution, and the line-width of the tunable ECDL in its tuning process. By summing up the optimal experimental condition from the measured data, we obtain the optimal tunable ECDL relevant parameters: the tunable ECDL has a linear mode-hop-free wavelength tuning region of 1547.203 nm-1552.426 nm, a stable output optical power in the range of 40 μW-50 μW, and a stable output longitudinal mode distribution of a single longitudinal mode with a line-width in the range of 100 MHz-150 MHz. This tunable ECDL can be used in environmental gas monitoring, atomic and molecular laser spectroscopy research, precise measurements, and so on.
文摘This paper presents the diffraction effects on the performance of a dual external cavity tunable laser source, whose external cavities are constructed by micro electro mechanical systems (MEMS). One of the main problems in these structures is the optical diffraction as the emitting surface of the laser diode is usually quite limited in the transverse directions. The emitted beam diffracts rapidly in the air and only a small amount of light is coupled back to the source that usually limits the tuning range of the source. Device characteristics such as tuning range, wavelength shift and sensitivity are evaluated. New expression is used and multiple reflections inside external cavities are considered. The simulation results have shown that single external cavity has limited tuning range. It is shown that multiple reflections have significant effect in our model. To get a better engineering for the dual ECTL dimensions, diffraction effects must be taken into account.
基金This work was supported by the National Key Research and Development Program of China(Grant No.2018YFA0209001)the Key Project of Frontier Science Research Project of CAS(Grant No.QYZDY-SSW-JSC021)the Strategic Priority Research Program of CAS(Grant No.XDB43020202).
文摘A wide wavelength tuning range and single-mode hybrid cavity laser consists of a square Whispering-Gallery(WG)microcavity and a Fabry–Pérot(FP)was introduced and demonstrated.A wavelength tuning range over 12.5 nm from 1760.87 to 1773.39 nm which was single-mode emitting was obtained with the side-mode suppression ratio over 30 dB.The hybrid cavity laser does not need grating etching and special epitaxial structure,which reduces the fabrication difficulty and cost,and shows the potential for gas sensing with absorption lines in this range.
文摘The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.
基金Supported by the Natural Science Foundation of Hebei Province under Grant Nos A2013402069 and A2013402081
文摘A surface plasmon interference lithography assisted by a Fabry-Perot (F-P) cavity composed of subwavelength metal gratings and a thin metal fihn is proposed to fabricate high-quality nanopatterns. The calculated results indicate that uniform straight interference fringes with high contrast and high electric-field intensity are formed in the resist under the F-P cavity. The analyses of spatial frequency spectra illuminate the physical mechanism of the formation for the interference fringes. The influence of the F-P cavity spacing is discussed in detail. Moreover, the error analyses reveal that all parameters except the metal grating period in this scheme can bear large tolerances for the device fabrication.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 10376009 and 60538010) and the program of Shanghai 0ptical Science and Technology, China (Grant No 012261065).
文摘We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr:LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser rods and is designed by using two "X" folding cavities in cascade. A tunable laser output of ~ 180 mW has been achieved with the pump of single-striped laser diodes. Compared with lasers using single gain rod, the laser with dual rods shows less severe thermal effect and increases the output by more than two times.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61172047 and 61071025)
文摘Sensitive detection of acetylene(C_2H_2) is performed by absorption spectroscopy and wavelength modulation spectroscopy(WMS) based on Fiber Fabry–Perot tunable filter(FFP-TF) at 1530.32 nm. After being calibrated by Fiber Bragg Grating(FBG), FFP-TF is frequency-multiplexed and modulated at 20 Hz and 2.5 kHz respectively to achieve wavelength modulation. The linearity with 0.9907 fitting coefficient is obtained by measuring different concentrations in a 100 ppmv–400 ppmv range. Furthermore, the stability of the system is analyzed by detecting 50 ppmv and 100 ppmv standard gases for 2 h under room temperature and ambient pressure conditions respectively. The precision of 11 ppmv is achieved by calculating the standard deviation. Therefore, the measuring system of C_2H_2 detection can be applied in practical applications.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11274289,11325419,11474267,11404319,61327901,61225025 and 1147426the Fundamental Research Funds for the Central Universities under Grant Nos WK2470000018 and WK2030020019+2 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01030300the National Youth Top Talent Support Program of National High-level Personnel of Special Support Program under Grant No BB2470000005the Anhui Provincial Natural Science Foundation under Grant No 1608085QA22
文摘We demonstrate a fiber Fabry-Pérot cavity in the ultraviolet range, which covers the florescence wavelength for the <sup>2</sup>P to <sup>2</sup>S transition of Yb and is designed in the bad cavity limit for florescence collection. Benefiting from both the small cavity mode volume and the large atom dipole, a cavity with moderate finesse and high transmission still supports a good cooperativity, which is made and tested in experiment. Based on the measured experimental parameters, simulation performed on the cavity and ion shows a Purcell factor better than 2.5 and a single-mode fiber collection efficiency over 10%. This technology can support ultra-bright single photon sources based on trapped ions and can provide the possibility to link remote atoms as a quantum network.
文摘The circular phased antenna array is commonly used for generating waves bearing Orbital Angular Momentum (OAM) in the radio frequency band, but it achieves a relatively low directivity. To overcome this drawback, we present here a method to improve the directivity of an OAM circular phased antenna array by embedding it inside a Fabry-Perot cavity. The Fabry-Perot cavity contains three main parts: a partially reflecting surface (PRS), an air cavity and a ground plane. Simulation data show that the directivity of this new OAM antenna achieves an improvement of 8.2 dB over the original array. A prototype is realized and characterized. The simulated and measured characteristics are in good agreement.