The conductive mechanisms of a titanium oxide memristor with dopant drift and a tunnel barrier

Nano-scale titanium oxide memristors exhibit complex conductive characteristics, which have already been proved by existing research. One possible reason for this is that more than one mechanism exists, and together they codetermine the conductive behaviors of the memristor. In this paper, we first analyze the theoretical base and conductive process of a memristor, and then propose a compatible circuit model to discuss and simulate the coexistence of the dopant drift and tunnel barrier-based mechanisms. Simulation results are given and compared with the published experimental data to prove the possibility of the coexistence. This work provides a practical model and some suggestions for studying the conductive mechanisms of memristors.

BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics

We investigate the effect of a high-k dielectric in the tunnel layer to improve the erase speed-retention trade-off. Here, the proposed stack in the tunnel layer is AlLaO_3/Hf AlO/SiO_2. These proposed materials possess low valence band offset with high permittivity to improve both the erase speed and retention time in barrier engineered silicon-oxide-nitride-oxide-silicon（BE-SONOS）. In the proposed structure Hf Al O and AlLaO_3 replace Si_3N_4 and the top SiO_2 layer in a conventional oxide/nitride/oxide（ONO） tunnel stack. Due to the lower conduction band offset（CBO） and high permittivity of the proposed material in the tunnel layer, it offers better program/erase（P/E） speed and retention time. In this work the gate length is also scaled down from 220 to 55 nm to observe the effect of high-k materials while scaling, for the same equivalent oxide thickness（EOT）. We found that the scaling down of the gate length has a negligible impact on the memory window of the devices. Hence, various investigated tunnel oxide stacks possess a good memory window with a charge retained up to 87.4%（at room temperature） after a period of ten years. We also examine the use of a metal gate instead of a polysilicon gate, which shows improved P/E speed and retention time.

Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions（DBMTJs）, where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top Mg O barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFe B DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter αmag.With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state（antiferromagnetic coupling between top and middle ferromagnetic layers） to parallel state. In this rotation process αmag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles（θ） to the easy axis of the free layer,the linear dependence persists while the intercept of the linear fit satisfies a cos（θ） dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance.

Transmission and Dwell Time Oscillations Caused by Coexistence of Tunneling and Propagating in a Trapezoidal Barrier

A 精制了我们的确切可解决的 trapezoidal 障碍潜力模型之一[薄固体电影， 414 (2002 ) 136 )] 为 metal-insulator-metal，隧道连接被介绍了。根据精制模型的意见，纵的动能(ExL ) 和在障碍的在左边的电极的电子的有效的团(m *L ) 在右与那区分开来。因为 ExL 比结果的 trapezoidal 障碍潜力的更短的方面大，它被发现那，将有通道的共存并且在障碍宣传。结果证明在宣传障碍分区局部性的抑制震荡的电子波浪在传播系数 DT 和居住时间 D 导致摆动和改进。为障碍高度 1 = 2.6 eV 和 2 = 1.4 eV，宽度 d = 22？并且 ExL = 1.0 eV， DT 和 D 有 0.054 和 0.58 的最大值(

Quantum Mechanical Tunneling of Dislocations: Quantization and Depinning from Peierls Barrier

Theories of Mott and Weertmann pertaining to quantum mechanical tunneling of dislocations from Peierls barrier in cubic crystals are revisited. Their mathematical calculations about logarithmic creep rate and lattice vibrations as a manifestation of Debye temperature for quantized thermal energy are found correct but they can not ascertain to choose the mass of phonon or “quanta” of lattice vibrations. The quantum mechanical yielding in metals at relatively low temperatures, where Debye temperatures operate, is resolved and the mathematical formulas are presented. The crystal plasticity is studied with stress relaxation curves instead of logarithmic creep rate. With creep rate formulas of Mott and Weertmann, a new formula based on logarithmic profile of stress relaxation curves is proposed which suggests simultaneous quantization of dislocations with their stress, i.e., and depinning of dislocations, i.e., , where is quantum action, σ is the stress, N is the number of dislocations, A is the area and t is the time. The two different interpretations of “quantum length of Peierls barrier”, one based on curvature of space, i.e., yields quantization of Burgers vector and the other based on the curvature of time, i.e., yields depinning of dislocations from Peierls barrier in cubic crystals, are presented. , i.e., the unitary operator on shear modulus yields the variations in the curvature of time due to which simultaneous quantization, and depinning of dislocations occur from Peierls barrier in cubic crystals.

Properties of Light Emission Spectrumof Double-barrier Tunnel Junction

Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak(locates at 450 nm^500 nm) of the double-barrier junction shows a "blue shift" in comparison with that of the single-barrier Metal/Insulator/Semiconductor(MIS) or Metal/Insulator/Metal(MIM) junction(wave peak locates at 620 nm^740 nm). This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.

Solid-state resonant tunneling thermoelectric refrigeration in the cylindrical double-barrier nanostructure

A solid-state thermoelectric refrigerator with a cylindrical InP/InAs/InP double-barrier heterostructure is proposed. Based on the ballistic electron transport and the asymmetrical transmission, we derive the expressions of the performance parameters of this refrigerator. The cooling rate rather than the coefficient of performance is affected by the area of the inner cylinder. Then through the numerical simulation, a triangular cooling rate region is found with respect to the chemical potential and bias voltage; further, that it is because of the small full width at half maximum of the transmission resonance and the linear relationship between the energy position of resonance and the bias voltage. These tunable results might supply some guide to the cooling in tiny components or devices.

Tantalum oxide barrier in magnetic tunnel junctions

Tantalum as an insulating barrier can take the place of Al in magnetic tunnel junctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectron spectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimental results show that the chemical state of tantalum is pure Taand the thickness of the oxide is 1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usually used in MTJs to form an intermetallic compound, NiTa. A magnetic "dead layer" could be produced in the NiFe/Ta interface. The "dead layer" is likely to influence the spinning electron transport and the magnetoresistance effect.

Tantalum oxide barrier in magnetic tunnel junctions

Tantalum as an insulating barrier can take the place of Al in magnetic tunneljunctions (MTJs). Ta barriers in MTJs were fabricated by natural oxidation. X-ray photoelectronspectroscopy (XPS) was used to characterize the oxidation states of Ta barrier. The experimentalresults show that the chemical state of tantalum is pure Ta^(5+) and the thickness of the oxide is1.3 nm. The unoxidized Ta in the barrier may chemically reacted with NiFe layer which is usuallyused in MTJs to form an intermetallic compound, NiTa_2. A magnetic 'dead layer' could be produced inthe NiFe/Ta interface. The 'dead layer' is likely to influence the spinning electron transport andthe magnetoresistance effect.

高海拔长大水工隧洞群挡烟垂壁控烟机制

针对长大水工隧洞群施工期火灾疏散救援难和挡烟垂壁作用机制不清晰的挑战,采用数值模拟方法对大型棋盘状隧洞群通风网络火灾烟气蔓延特征及控烟机制开展系统研究,包括烟气扩散路径及能见度分布,设置挡烟垂壁对烟气扩散速度、能见度及温度的影响及控烟效果。结果表明:火灾后烟气首先沿单一隧洞轴线双向传播,扩散至施工支洞时部分支路产生烟气逆转、逆退现象,500 s计算时长内烟气几乎充满整个通风网络,烟气层与下层空气的分层界面不稳定,网络交汇处烟气层高度明显降低。设置挡烟垂壁对烟气沿隧洞轴向传播具有促进作用,效果随传播距离增长而减弱;对烟气沿施工支洞轴线传播具有累积阻滞作用;挡烟垂壁对烟气温度的影响随扩散距离增加不断减弱;挡烟垂壁前方形成储烟池,增强烟气逆流程度,后方为烟气减速增压区,烟气层升高。

一维双方势垒单势阱模型的共振隧穿条件研究

对于双势垒或多势垒系统,当入射粒子能量符合共振能级时将产生共振隧穿,使穿透率为一极大值,这样一个重要的性质在很多量子或半经典器件中都有广阔的应用前景.本文主要研究一维双方势垒模型及具有高度对称性的ABABA型双方势垒系统.从薛定谔方程出发,通过推导获得了一般的一维双方势垒系统的透射率计算方法,为数值计算提供了参考公式,并证明了透射率解析解的存在.对于具有高度对称性的ABABA型双方势垒系统模型,本文推导了透射率的解析表达式,并且给出了共振遂穿条件的解析解,探讨了共振隧穿所需条件及影响因素.

大跨长挑臂钢箱组合梁桥抗风性能试验研究

为了解大跨长挑臂钢箱组合梁桥抗风性能及选取合适的声屏障形式,以挑臂长7.5 m的钢箱组合梁桥——临猗黄河大桥为背景,基于有限元计算的施工及成桥阶段桥梁动力特性指标,制作1个缩尺比1∶50的最大悬臂施工状态钢箱梁、2个缩尺比1∶60的成桥状态不同声屏障设置形式(直线形、折线形,高度均为2.5 m)钢箱组合梁节段模型进行风洞试验,分析施工和成桥状态主梁断面的涡振、颤振和驰振性能。结果表明:施工状态的钢箱梁抗风稳定性良好,涡振、颤振和驰振性能均满足设计要求;常遇风攻角为0°、±3°时,成桥状态下,设置2.5 m高折线形声屏障可有效抑制主梁涡振响应,且颤振与驰振稳定性均满足规范要求;设置2.5 m高直线形声屏障的主梁发生明显的竖向涡振现象。该桥主梁最终采用2.5 m高折线形声屏障。

长挑臂闭口钢箱组合梁桥设计及其关键技术

为满足黄河桥梁跨度需求和减少临时施工设施对黄河泄洪的干扰,该文以临猗黄河大桥为依托,其主桥采用(112+28×128+120) m连续长挑臂闭口钢箱组合梁,共分两联,最大联长1 912 m。钢箱组合梁采用无临时墩顶推法施工,闭口钢箱梁顶推到位后再安装桥面板,桥面板安装顺序为先跨中正弯矩区后支点负弯矩区。重点对组合梁负弯矩区力学性能优化措施、斜撑抗疲劳设计和2.5 m高声屏障抗风优化设计3个关键技术问题开展研究,结果表明:负弯矩区采用双结合构造可降低钢箱梁底板压应力和桥面板裂缝宽度,张拉体外预应力钢束的优化效果随着混凝土收缩徐变作用逐渐降低;相同截面积的方钢管斜撑抗疲劳性能优于圆钢管;折线形声屏障可有效抑制主梁涡振响应。

一维三方势垒量子隧穿特性的研究

本文通过严格求解定态薛定谔方程,研究了一维对称三方势垒的量子隧穿特性,解析地给出透射系数的精确表达式,并且数值模拟了势垒高度、势垒间距以及粒子入射能量对透射系数的影响.结果表明:当取不同的势垒宽度,或者不同的粒子入射能量时,透射系数随着势垒间距的增加而呈现出明显的周期式振荡.将一维对称双方势垒和三方势垒进行比较,透射系数随着势垒间距的增大,均呈现周期性振荡,并且振荡周期相同,但三方势垒振荡更剧烈,振幅越大,并且三方对称势垒是双峰曲线,而双方对称势垒是单峰曲线.该特性为设计新型纳米器件以及共振隧穿量子器件等提供理论指导.

和田—若羌铁路戈壁盐碱区高立式“Z”字形沙障配置的风洞试验

[目的]探究多排“Z”字形沙障的合理配置模式,为和田—若羌铁路沿线戈壁盐碱区的风沙防护提供科学参考。[方法]在风洞中模拟当地的风沙环境,对孔隙率为40%的多排“Z”字形高立式沙障的防沙效果进行试验。[结果]多排沙障的迎风面与风向的夹角为钝角时,沙障后积沙出现分离现象;沙障的迎风面与风向的夹角为锐角时,沙障后积沙出现聚集现象。防沙效率随着风速增加都有所下降,当风速为12 m/s(7级风)时,设置两道高立式沙障和三道高立式沙障的防沙效率分别为74.0%和100%,当风速增加至15 m/s(9级风)时,设置两道高立式沙障和三道高立式沙障的防沙效率分别为72.7%,88.9%。[结论]鉴于该研究区风沙条件,建议采用三道沙障,沙障的迎风面与风向尽量呈钝角布置。

STM investigations of local potential barrier distribution of the atomic surface of graphite

To modulate the tunneling gap with the lock in amplifier in the scanning tunneling microscopy(STM), information of the tunneling current variation can be obtained. The local potential barrier distribution of graphite surface atoms is got by means of such technology. Compared with STM image under topography observation mode, the local potential barrier image has higher resolution and less influence on the tip and better anti interference capability. Observed results of the graphite are given and discussed in this paper.

Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin-orbit coupling

We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer Biittiker formalism and taking into account the spin-orbit coupling （SOC）. It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier （FB） and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.

Electron transport in electrically biased inverse parabolic double-barrier structure

A theoretical study of resonant tunneling is carried out for an inverse parabolic double-barrier structure subjected to an external electric field. Tunneling transmission coefficient and density of states are analyzed by using the non-equilibrium Green＇s function approach based on the finite difference method. It is found that the resonant peak of the transmission coefficient, being unity for a symmetrical case, reduces under the applied electric field and depends strongly on the variation of the structure parameters.

Spin-filtering junctions with double ferroelectric barriers

An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction.