In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires...In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W （-1） and an external quantum efficiency of2.8 × 10 5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 V.The effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors.These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51525202,61574051,61505051,and 61474040)the Science and Tecnnology Plan of Hunan Province,China(Grant Nos.2014FJ2001 and 2014TT1004)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,China
文摘In this paper,small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method.Benefitting from the high crystallinity and large specific surface area of InP nanowires,the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W （-1） and an external quantum efficiency of2.8 × 10 5% with a fast rise time of 110 ms and a fall time of 130 ms,even at low bias of 0.1 V.The effect of back-gate voltage on photoresponse of the device was systematically investigated,confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation.A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors.These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics.
